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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2024-01-31
13:05		 Tokyo KIT Toranomon Graduate School
(Primary: On-site, Secondary: Online)		 [Invited Talk] Polarization Engineering in AlSiO/p-type GaN MOSFETs Using AlN Interlayers Formed by Plasma-Enhanced Atomic Layer Deposition
Kenji Ito, Tetsuo Narita, Hiroko Iguchi, Shiro Iwasaki, Daigo Kikuta (Toyota Central R&D), Emi Kano, Nobuyuki Ikarashi, Kazuyoshi Tomita, Masahiro Horita, Jun Suda (Nagoya Univ.) SDM2023-75		 Polarization engineering by AlN interlayers (AlN-ILs) deposited via plasma-enhanced atomic layer deposition was demonstr... [more] SDM2023-75
pp.5-8
SDM, ED, CPM 2017-05-26
10:20		 Aichi VBL, Nagoya University Characterization of GaN epilayers grown on GaN substrates by a microwave photoconductivity decay method
Takato Asada (N.I.Tech), Yoshihito Ichikawa (NITech), Kenji Ito, Kazuyoshi Tomita, Tetsuo Narita (Toyota Central R&D Labs.), Tetsu Kachi (Nagoya Univ.), Masashi Kato (NITech) ED2017-25 CPM2017-11 SDM2017-19		  [more] ED2017-25 CPM2017-11 SDM2017-19
pp.55-58
ED, LQE, CPM 2015-11-26
13:35		 Osaka Osaka City University Media Center Electrical characterization of lightly Si-doped homoepitaxitial n-type GaN studied by Hall-effect measurement
Naoki Sawada (Kyoto Univ.), Tetsuo Narita, Tetsu Kachi, Tsutomu Uesugi (TOYOTA Central R&D Labs.), Masahiro Horita, Jun Suda (Kyoto Univ.) ED2015-73 CPM2015-108 LQE2015-105		  [more] ED2015-73 CPM2015-108 LQE2015-105
pp.27-32
CPM, LQE, ED 2010-11-12
10:25		 Osaka   Study of etching-induced damage in p-type GaN by hard X-ray photoelectron spectroscopy
Daigo Kikuta, Tetsuo Narita, Naoko Takahashi, Keita Kataoka, Yasuji Kimoto, Tsutomu Uesugi, Tetsu Kachi (Toyota CRDL, Inc.), Masahiro Sugimoto (Toyota Motor Corp.) ED2010-155 CPM2010-121 LQE2010-111		 We carried out nondestructive measurements of the depth profile of etching-induced damage in p-GaN, in particular surfac... [more] ED2010-155 CPM2010-121 LQE2010-111
pp.59-62
ED, CPM, LQE 2006-10-06
11:50		 Kyoto   Analysis of internal quantum efficiency of GaN-based light emitting diodes by investigating electroluminescence lifetime
Kotaro Zaima (Toshiba), Tetsuo Narita (Nagoya Univ.), Shinji Saito, Koichi Tachibana, Hajime Nago, Genichi Hatakoshi, Shinya Nunoue (Toshiba) 		The internal quantum efficiency of GaN-based light emitting diodes (LEDs) was analyzed by investigating electroluminesce... [more] ED2006-166 CPM2006-103 LQE2006-70
pp.79-82
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