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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 9 of 9  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
EE, WPT
(Joint)		 2016-10-06
16:25		 Kyoto   Drive-by-Microwave(DBM) technologies for power switching devices
Songbek Che, Shuichi Nagai, Noboru Negoro, Yasufumi Kawai, Osamu Tabata, Yasuhiro Yamada, Hiroaki Ueno, Tetsuzo Ueda (Panasonic AIS) EE2016-23 WPT2016-29		 (To be available after the conference date) [more] EE2016-23 WPT2016-29
pp.25-30(EE), pp.55-60(WPT)
ICD, CPSY 2015-12-18
10:50		 Kyoto Kyoto Institute of Technology [Invited Talk] GaN Power Switching Devices and its Integrated Circuits
Shuichi Nagai (Panasonic) ICD2015-86 CPSY2015-99		 A GaN power semiconductor device attacks great attention due to its high-speed and low loss operation under high tempera... [more] ICD2015-86 CPSY2015-99
pp.83-85
ICD, SDM 2012-08-03
10:05		 Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido [Invited Talk] A DC-Isolated Gate Drive IC with Drive-by-Microwave Technology
Shuichi Nagai, Noboru Negoro, Takeshi Fukuda, Yasufumi Kawai, Tetsuzo Ueda, Tsuyoshi Tanaka, Nobuyuki Otsuka, Daisuke Ueda (Panasonic) SDM2012-79 ICD2012-47		 We have developed new isolated gate drivers with the Drive-by-Microwave Technology that regenerates the gate signal afte... [more] SDM2012-79 ICD2012-47
pp.89-92
ED 2010-12-17
10:35		 Miyagi Tohoku University (Research Institute of Electrical Communication) [Invited Talk] GaN Devices on Low Cost Substrates for Long-distance Millimeter-wave Communication
Hiroyuki Sakai, Masayuki Kuroda, Noboru Negoro, Tomohiro Murata, Shuichi Nagai, Masaaki Nishijima, Yoshiharu Anda, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2010-167		 We present GaN Devices on low cost substrates for long-distance millimeter-wave communication. Sapphire substrates are u... [more] ED2010-167
pp.53-58
MW 2008-08-28
14:20		 Osaka Osaka-Univ. (Toyonaka) K-band AlGaN/GaN-based MMICs on sapphire substrates
Tomohiro Murata, Masayuki Kuroda (Matsushita), Shuichi Nagai (PBL), Masaaki Nishijima, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Hiroyuki Sakai, Tsuyoshi Tanaka (Matsushita), Ming Li (PBL) MW2008-85		 We present K-band AlGaN/GaN HFET MMIC amplifiers with integrated microstrip lines on sapphire substrates. The microstrip... [more] MW2008-85
pp.37-40
SDM, ED 2008-07-11
10:50		 Hokkaido Kaderu２・７ High Breakdown Voltage of 10400V in AlGaN/GaN HFET with AlN Passivation
Daisuke Shibata, Hisayoshi Matsuo (Matsushita Electric Industrial), Shuichi Nagai, Ming Li (Panasonic Boston Lab), Naohiro Tsurumi, Hidetoshi Ishida, Manabu Yanagihara, Yasuhiro Uemoto, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric Industrial) ED2008-73 SDM2008-92		 We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) using thick poly-crystalline AlN (pol... [more] ED2008-73 SDM2008-92
pp.177-181
SDM, ED 2008-07-11
14:20		 Hokkaido Kaderu２・７ AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire
Tomohiro Murata, Masayuki Kuroda (Matsushita Electric Industrial), Shuichi Nagai (Panasonic Boston Lab.), Masaaki Nishijima, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Hiroyuki Sakai, Tsuyoshi Tanaka (Matsushita Electric Industrial), Ming Li (Panasonic Boston Lab.) ED2008-103 SDM2008-122		 We present K-band AlGaN/GaN HFET MMIC amplifiers on sapphire substrates. Integrated AlGaN/GaN HFETs have superlattice ca... [more] ED2008-103 SDM2008-122
pp.331-335
ED, MW 2008-01-16
16:15		 Tokyo Kikai-Shinko-Kaikan Bldg. 10400V Blocking Voltage AlGaN/GaN Power HFET
Daisuke Shibata, Yasuhiro Uemoto, Manabu Yanagihara, Hidetoshi Ishida (Panasonic), Shuichi Nagai (Panasonic Boston Lab.), Hisayoshi Matsuo (Panasonic), Ming Li (Panasonic Boston Lab.), Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) ED2007-213 MW2007-144		 We report ultra high blocking voltage AlGaN/GaN heterojunction transistors (HFETs) on sapphire using via-holes and thick... [more] ED2007-213 MW2007-144
pp.39-43
ED, MW 2008-01-17
14:50		 Tokyo Kikai-Shinko-Kaikan Bldg. A 26GHz Short-Range UWB Vehicular-Radar Using 2.5Gcps Spread Spectrum Modulation
Takeshi Fukuda, Noboru Negoro, Shinji Ujita, Shuichi Nagai, Masaaki Nishijima, Hiroyuki Sakai, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric) ED2007-223 MW2007-154		 A 26GHz short-range radar system has been developed based on a 2.5Gcps direct sequence spread spectrum technique combine... [more] ED2007-223 MW2007-154
pp.93-97
 Results 1 - 9 of 9  /   
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