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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
LQE, OPE |
2011-06-30 16:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Development of an AlInAs Avalanche Photodiode for 10G-EPON Yoshifumi Sasahata, Masaharu Nakaji, Susumu Ihara, Kazuki Yamaji, Matobu Kikuchi, Daisuke Suzuki, Hitoshi Sakuma, Yasuhiro Kunitsugu, Eitaro Ishimura, Atsushi Sugitatsu (Mitsubishi Electric Co.) OPE2011-27 LQE2011-27 |
We developed a surface illuminated AlInAs Avalanche Photodiode ( APD ) for 10G - EPON ONU. We optimized a distributed br... [more] |
OPE2011-27 LQE2011-27 pp.65-69 |
EMD, OPE, LQE, CPM |
2010-08-26 15:25 |
Hokkaido |
Chitose Arcadia Plaza |
Development of 4ch-WDM optics of receiver module for 100Gbps Ethernet Keita Mochizuki, Hiroshi Aruga, Hiromitsu Itamoto, Koichi Akiyama, Yuichiro Horiguchi, Satoshi Nishikawa, Masaharu Nakaji, Ryota Takemura, Atsushi Sugitatsu (Mitsubishi Electric Corp.) EMD2010-36 CPM2010-52 OPE2010-61 LQE2010-34 |
We developed an integrated 4ch-WDM optics with 4ch-PD array for a compact 100 Gbps Ethernet ROSA. It accomplishes loss o... [more] |
EMD2010-36 CPM2010-52 OPE2010-61 LQE2010-34 pp.49-52 |
OPE, LQE, OCS |
2009-10-23 16:55 |
Fukuoka |
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High-power RF InGaAs/InP p-i-n PD Shigetaka Itakura, Kiyohide Sakai, Eitaro Ishimura, Masaharu Nakaji, Toshitaka Aoyagi, Yoshihito Hirano (Mitsubishi Electric Corp.) OCS2009-80 OPE2009-146 LQE2009-105 |
We proposed a high-power RF InGaAs/InP p-i-n photodiode (PD) with a non-absorbing drift region for RF photonic links, an... [more] |
OCS2009-80 OPE2009-146 LQE2009-105 pp.191-195 |
OPE, LQE, OCS |
2009-10-23 17:20 |
Fukuoka |
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The development of 25Gbps pin-PD for 100Gbps Ethernet Ryota Takemura, Masaharu Nakaji, Hitoshi Sakuma, Chikara Watatani, Takashi Nagira, Daisuke Suzuki, Toshitaka Aoyagi, Takahide Ishikawa (Mitsubishi electric) OCS2009-81 OPE2009-147 LQE2009-106 |
We fabricated a surface-illuminated pin-PD for 100Gbps Ethernet. This pin-PD with a 15$\mu$m-diameter has a 3dB bandwidt... [more] |
OCS2009-81 OPE2009-147 LQE2009-106 pp.197-200 |
OPE, EMT, MW |
2009-07-30 13:25 |
Hokkaido |
Asahikawa Civic Culture Hall |
High efficiency dual-resonant-cavity InGaAs pin-PD for radio-over-fiber application Eitaro Ishimura, Masaharu Nakaji, Chikara Watatani, Toru Ota, Shigetaka Itakura, Kiyohide Sakai, Toshitaka Aoyagi, Takahide Ishikawa (Mitsubishi Electric Corp.) MW2009-35 OPE2009-35 |
For radio-over-fiber applications, we have developed a high-efficient InGaAs pin PD with a dual resonant cavity, which r... [more] |
MW2009-35 OPE2009-35 pp.31-34 |
OCS, LQE, OPE |
2008-10-23 09:25 |
Fukuoka |
Kyushu Univ. |
High-current InGaAs pin-PD for Microwave output Eitaro Ishimura, Masaharu Nakaji, Chikara Watatani, Toru Ota, Toshitaka Aoyagi, Takahide Ishikawa (Mitsubishi Electric corp. High Frequency & Optical Device Works) OCS2008-48 OPE2008-91 LQE2008-60 |
For microwave applications, we have developed an InGaAs pin PD. Its absorbing layer is buried by a semi-insulated InP la... [more] |
OCS2008-48 OPE2008-91 LQE2008-60 pp.7-10 |
LQE, CPM, EMD, OPE |
2008-08-29 10:55 |
Miyagi |
Touhoku Univ. |
The guardring-free InAlAs Avalanche Photodiodes for optical communication Masaharu Nakaji, Eitaro Ishimura, Eiji Yagyu, Yohei Mikami, Susumu Ihara, Toshitaka Aoyagi, Kiichi Yoshiara, Takahide Ishikawa (Mitsubishi electric corp.) EMD2008-49 CPM2008-64 OPE2008-79 LQE2008-48 |
We present a guardring-free InAlAs APD, which achieves low noise and high reliability. The InAlAs APDs produced sensitiv... [more] |
EMD2008-49 CPM2008-64 OPE2008-79 LQE2008-48 pp.89-92 |
LQE, OPE, OCS |
2007-11-01 10:50 |
Fukuoka |
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Highly reliable guardring-free planar InAlAs avalanche photodiode Eitaro Ishimura, Eiji Yagyu, Masaharu Nakaji, Susumu Ihara, Kiichi Yoshiara, Toshitaka Aoyagi, Yasunori Tokuda, Takahide Ishikawa (Mitsubishi Electric Corp.) OCS2007-43 OPE2007-98 LQE2007-84 |
he InAlAs avalanche photodiode with a guardring-free structure that reduces the bias voltage of the pn-junction of top s... [more] |
OCS2007-43 OPE2007-98 LQE2007-84 pp.19-22 |
OPE, EMT, LQE, PN |
2007-01-29 13:50 |
Osaka |
Osaka Univ. Convention Center |
Waveguide photodiode for 40Gbps optical comunication Masaharu Nakaji, Eitaro Ishimura, Chikara Watatani, Toshitaka Aoyagi, Takahide Ishikawa (Mitsubishi Electric Corp.) PN2006-55 OPE2006-137 LQE2006-126 |
[more] |
PN2006-55 OPE2006-137 LQE2006-126 pp.45-48 |
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