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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, SDM 2010-08-27
13:45
Hokkaido Sapporo Center for Gender Equality 70% Read Margin Enhancement by VTH Mismatch Self-Repair in 6T-SRAM with Asymmetric Pass Gate Transistor by Zero Additional Cost, Post-Process, Local Electron Injection
Kousuke Miyaji, Shuhei Tanakamaru, Kentaro Honda (Univ. of Tokyo), Shinji Miyano (STARC), Ken Takeuchi (Univ. of Tokyo) SDM2010-145 ICD2010-60
A VTH mismatch self-repair scheme in 6T-SRAM with asymmetric PG transistor by post-process local electron injection is p... [more] SDM2010-145 ICD2010-60
pp.115-120
SDM 2010-06-22
15:15
Tokyo An401・402 Inst. Indus. Sci., The Univ. of Tokyo 70% Read Margin Enhancement by VTH Mismatch Self-Repair in 6T-SRAM with Asymmetric Pass Gate Transistor by Zero Additional Cost, Post-Process, Local Electron Injection
Kousuke Miyaji, Shuhei Tanakamaru, Kentaro Honda (Univ. of Tokyo), Shinji Miyano (STARC), Ken Takeuchi (Univ. of Tokyo) SDM2010-44
A VTH mismatch self-repair scheme in 6T-SRAM with asymmetric PG transistor by post-process local electron injection is p... [more] SDM2010-44
pp.61-65
ICD 2010-04-22
11:40
Kanagawa Shonan Institute of Tech. 32% Lower Active Power, 42% Lower Leakage Current Ferroelectric 6T-SRAM with VTH Self-Adjusting Function for 60% Larger Static Noise Margin (SNM)
Shuhei Tanakamaru, Teruyoshi Hatanaka, Ryoji Yajima (Univ. of Tokyo), Mitsue Takahashi, Shigeki Sakai (AIST), Ken Takeuchi (Univ. of Tokyo) ICD2010-5
A 0.5V 6T-SRAM with ferroelectric (Fe-) FETs is proposed and experimentally demonstrated for the first time. The propose... [more] ICD2010-5
pp.23-28
ICD, SDM 2009-07-16
14:00
Tokyo Tokyo Institute of Technology A 60pJ, 3-Clock Rising Time, VTH Loss Compensated Word-line Booster Circuit for 0.5V Power Supply Embedded/Discrete DRAMs
Shuhei Tanakamaru, Ken Takeuchi (Univ. of Tokyo) SDM2009-103 ICD2009-19
A low power high-speed word-line booster is proposed for 0.5V operation DRAM. Word-line booster is composed of stand-by ... [more] SDM2009-103 ICD2009-19
pp.33-38
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