|
|
All Technical Committee Conferences (Searched in: All Years)
|
|
Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
|
Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ICD, SDM |
2010-08-27 13:45 |
Hokkaido |
Sapporo Center for Gender Equality |
70% Read Margin Enhancement by VTH Mismatch Self-Repair in 6T-SRAM with Asymmetric Pass Gate Transistor by Zero Additional Cost, Post-Process, Local Electron Injection Kousuke Miyaji, Shuhei Tanakamaru, Kentaro Honda (Univ. of Tokyo), Shinji Miyano (STARC), Ken Takeuchi (Univ. of Tokyo) SDM2010-145 ICD2010-60 |
A VTH mismatch self-repair scheme in 6T-SRAM with asymmetric PG transistor by post-process local electron injection is p... [more] |
SDM2010-145 ICD2010-60 pp.115-120 |
SDM |
2010-06-22 15:15 |
Tokyo |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
70% Read Margin Enhancement by VTH Mismatch Self-Repair in 6T-SRAM with Asymmetric Pass Gate Transistor by Zero Additional Cost, Post-Process, Local Electron Injection Kousuke Miyaji, Shuhei Tanakamaru, Kentaro Honda (Univ. of Tokyo), Shinji Miyano (STARC), Ken Takeuchi (Univ. of Tokyo) SDM2010-44 |
A VTH mismatch self-repair scheme in 6T-SRAM with asymmetric PG transistor by post-process local electron injection is p... [more] |
SDM2010-44 pp.61-65 |
ICD |
2010-04-22 11:40 |
Kanagawa |
Shonan Institute of Tech. |
32% Lower Active Power, 42% Lower Leakage Current Ferroelectric 6T-SRAM with VTH Self-Adjusting Function for 60% Larger Static Noise Margin (SNM) Shuhei Tanakamaru, Teruyoshi Hatanaka, Ryoji Yajima (Univ. of Tokyo), Mitsue Takahashi, Shigeki Sakai (AIST), Ken Takeuchi (Univ. of Tokyo) ICD2010-5 |
A 0.5V 6T-SRAM with ferroelectric (Fe-) FETs is proposed and experimentally demonstrated for the first time. The propose... [more] |
ICD2010-5 pp.23-28 |
ICD, SDM |
2009-07-16 14:00 |
Tokyo |
Tokyo Institute of Technology |
A 60pJ, 3-Clock Rising Time, VTH Loss Compensated Word-line Booster Circuit for 0.5V Power Supply Embedded/Discrete DRAMs Shuhei Tanakamaru, Ken Takeuchi (Univ. of Tokyo) SDM2009-103 ICD2009-19 |
A low power high-speed word-line booster is proposed for 0.5V operation DRAM. Word-line booster is composed of stand-by ... [more] |
SDM2009-103 ICD2009-19 pp.33-38 |
|
|
|
Copyright and reproduction :
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
|
[Return to Top Page]
[Return to IEICE Web Page]
|