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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, ED, CPM | 2023-12-01 14:00 |
Shizuoka | High thickness controllability of AlInN/GaN DBRs with in-situ reflectivity spectra measurements Kenta Kobayashi, Ruka Watanabe, Taichi Nishikawa, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama (Meijo Univ.)  ED2023-31 CPM2023-73 LQE2023-71 |
In-situ layer thickness controls with in-situ reflectivity spectra measurements have been actively used in commercialize... [more] | ED2023-31 CPM2023-73 LQE2023-71 pp.76-79 |
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| LQE, ED, CPM | 2023-12-01 14:25 |
Shizuoka | Fabrication of GaN-based VCSELs with cavity length control including ITO electrode and Nb2O5 spacer Ruka Watanabe, Kenta Kobayashi, Mitsuki Yanagawa, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.) ED2023-32 CPM2023-74 LQE2023-72 |
In the fabrication of vertical-cavity surface-emitting lasers (VCSELs), high controllability of the resonance wavelength... [more] | ED2023-32 CPM2023-74 LQE2023-72 pp.80-83 |
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| LQE, ED, CPM | 2023-12-01 14:50 |
Shizuoka | Fabrication of vertical AlGaN-based UV-B LD Toma Nishibayashi, Ryosuke Kondo, Eri Matsubara, Ryoya Yamada, Yoshinori Imoto, Koki Hattori, Sho Iwayama, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi (Meijo Univ.), Hideto Miyake (Mie Univ.), Kohei Miyoshi, Koichi Naniwae (Ushio Inc.), Akihiko Yamaguchi (Seishin Trading Co. Ltd.) ED2023-33 CPM2023-75 LQE2023-73 |
In this study, we report on the fabrication method and characteristics of vertical UV-B laser diodes, which are advantag... [more] | ED2023-33 CPM2023-75 LQE2023-73 pp.84-87 |
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| LQE, ED, CPM | 2023-12-01 16:15 |
Shizuoka | The properties of UV-B laser diodes on AlN nanopillars by using wet etching method Yoshinori Imoto, Ryosuke Kondo, Ryoya Yamada, Koki Hattori, Toma Nishibayashi, , Sho Iwayama, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya (Meijo Univ), Hideto Miyake (Mie Univ) ED2023-36 CPM2023-78 LQE2023-76 |
Our groups reported that we could fabricate high quality lattice relaxed AlGaN grown on periodic AlN nanopillars.and thr... [more] | ED2023-36 CPM2023-78 LQE2023-76 pp.98-101 |
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| CPM, ED, LQE | 2022-11-25 11:25 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Growth temperature dependence of semipolar {11-22} AlInN/GaInN Takahiro Fujisawa, Taiki Nakabayashi, Takashi Egawa, Makoto Miyoshi (Nagoya Inst. Tech.), Tetsuya Takeuchi (Meijo Univ.), Narihito Okada, Kazuyuki Tadatomo (Yamaguchi Univ.) ED2022-42 CPM2022-67 LQE2022-75 |
AlInN alloys are promising materials for GaN-based electronic and optical devices. In this study, AlInN layers with a th... [more] | ED2022-42 CPM2022-67 LQE2022-75 pp.81-84 |
| CPM, ED, LQE | 2022-11-25 13:20 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Fabrication of AlGaN-based UV-B semiconductor lasers and their device performance Ayumu Yabutani, Ryota Hasegawa, Ryosuke kondo, Eri Matsubara (Meijo Univ.), Sho Iwayama (Meijo Univ./Mie Univ.), Yoshito Jin, Tatsuya Matsumoto, Masamitsu Toramaru (JSW), Hironori Torii (JSW afty), Daichi Imai, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Hideto Miyake (Mie Univ.) ED2022-44 CPM2022-69 LQE2022-77 |
[more] | ED2022-44 CPM2022-69 LQE2022-77 pp.89-92 |
| ED, CPM, LQE | 2021-11-25 13:05 |
Online | Online | [Encouragement Talk]
Optimization of buried growth and optical properties for nanowire-based light emitter Yoshiya Miyamoto, Naoki Sone, Renji Okuda, Weifang Lu, Kazuma Ito, Shiori Yamamura, Yukimi Jinno, Nanami Nakayama, Sae Katsuro, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya (Meijo Univ.) ED2021-19 CPM2021-53 LQE2021-31 |
(To be available after the conference date) [more] | ED2021-19 CPM2021-53 LQE2021-31 pp.25-28 |
| ED, CPM, LQE | 2021-11-25 15:25 |
Online | Online | Optical characterization of c-plane Al0.83In0.17N/GaN lattice-matched heterostructures Liyang Li, Kohei Shima (Tohoku Univ.), Mizuki Yamanaka (Nagoya Inst. Tech.), Kazunobu Kojima (Tohoku Univ.), Takashi Egawa (Nagoya Inst. Tech.), Akira Uedono (Univ. of Tsukuba), Ishibashi Shoji (AIST), Tetsuya Takeuchi (Meijo Univ.), Makoto Miyoshi (Nagoya Inst. Tech.), Shigefusa Chichibu (Tohoku Univ.) ED2021-24 CPM2021-58 LQE2021-36 |
Room-temperature (RT) time-resolved photoluminescence (PL) and spatially resolved cathodoluminescence (CL) measurements ... [more] | ED2021-24 CPM2021-58 LQE2021-36 pp.45-50 |
| LQE, CPM, ED | 2020-11-26 10:45 |
Online | Online | Calculation of carrier injection efficiency of AlGaN UVB Laser Diode Kosuke Sato (Asahi-Kasei), Tomoya Omori, Kazuki Yamada, Shunya Tanaka, Sayaka Ishizuka, Shohei Teramura, Sho Iwayama, Motoaki Iwaya (Meijo Univ.), Hideto Miyake (Mie Univ.), Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2020-3 CPM2020-24 LQE2020-54 |
[more] | ED2020-3 CPM2020-24 LQE2020-54 pp.9-12 |
| LQE, CPM, ED | 2020-11-26 11:15 |
Online | Online | Study on p/n conductivity control of epitaxial AlInN films Taiki Nakabayashi, Haruka Takada, Takashi Egawa, Makoto Miyoshi (NIT), Tetsuya Takeuchi (Meijo Univ.) ED2020-4 CPM2020-25 LQE2020-55 |
In this study, we attempted the p/n conductivity control of epitaxial AlInN films grown by metalorganic chemical vapor d... [more] | ED2020-4 CPM2020-25 LQE2020-55 pp.13-16 |
| LQE, CPM, ED | 2020-11-27 13:00 |
Online | Online | Optimization of lateral Mg activation in LEDs with GaN tunnel junctions Mikiko Tasaki, Kazuki Kiyohara, Mahito Odawara, Taichi Ito, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Nagoya Univ.) ED2020-18 CPM2020-39 LQE2020-69 |
Current confinement structures with GaN tunnel junctions have been utilized in LEDs and laser diodes. In such devices, a... [more] | ED2020-18 CPM2020-39 LQE2020-69 pp.67-70 |
| LQE, CPM, ED | 2020-11-27 13:20 |
Online | Online | Study on crystal growth for nanowire-based light emitter including multiple-quantum-shell and tunnel junction Yoshiya Miyamoto, Naoki Sone, Weifang Lu, Renji Okuda, Kazuma Ito, Koji Okuno, Kazuyoshi Iida, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Akasaki Research Center, Nagoya Univ.) ED2020-19 CPM2020-40 LQE2020-70 |
In this work, we investigated the growth conditions of n-GaN cap layer for nanowire-based laser diodes. The selective-ar... [more] | ED2020-19 CPM2020-40 LQE2020-70 pp.71-74 |
| LQE, CPM, ED | 2020-11-27 13:40 |
Online | Online | Optimization of the optical waveguide layer in AlGaN-based UV-B LD Shunya Tanaka (Meijo Univ.), Kosuke Sato (Asahi-Kasei), Shinji Yasue, Yuya Ogino, Kazuki Yamada, Sayaka Ishizuka, Tomoya Omori, Shohei Teramura, Sho Iwayama (Meijo Univ.), Hideto Miyake (Mie Univ.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2020-20 CPM2020-41 LQE2020-71 |
Recently, the group reported the realization of current injection semiconductor lasers in the UV-B region. In the future... [more] | ED2020-20 CPM2020-41 LQE2020-71 pp.75-78 |
| CPM, LQE, ED | 2019-11-21 14:35 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | AlGaN-based electron beam excitation UV lasers using AlGaN well layer Yusuke Sakuragi, Shinji Yasue, Shohei Teramura, Yuya Ogino, Syunya Tanaka, Sho Iwayama, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi, Iwamu Akasaki (Meijo University), HIdeto Miyake (Mie University) ED2019-43 CPM2019-62 LQE2019-86 |
(To be available after the conference date) [more] | ED2019-43 CPM2019-62 LQE2019-86 pp.45-48 |
| CPM, LQE, ED | 2019-11-21 14:55 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Epitaxial growth of thick AlInN films on GaN and GaInN by MOCVD Mizuki Yamanaka, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech.), Narihito Okada, Kazuyuki Tadatomo (Yamaguchi Univ.), Tetsuya Takeuchi (Meijo Univ.) ED2019-44 CPM2019-63 LQE2019-87 |
[more] | ED2019-44 CPM2019-63 LQE2019-87 pp.49-52 |
| CPM, LQE, ED | 2019-11-21 15:50 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Polarization characteristics in GaN-based vertical cavity surface emitting laser with AlInN/GaN distribution bragg reflectors Kaoru Oda, Ryosuke Iida, Sho Iwayama, Kazuki Kiyohara, Tetsuya Takeuci, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.) ED2019-46 CPM2019-65 LQE2019-89 |
In this study, we investigated polarization characteristics of GaN-based VCSELs. In particular, dependences of substrate... [more] | ED2019-46 CPM2019-65 LQE2019-89 pp.57-60 |
| CPM, LQE, ED | 2019-11-22 13:25 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Dislocation density dependence of optical gain and internal loss in UV-B region AlGaN active layer Shunya Tanaka, Yuta Kawase (Meijo Univ.), Kosuke Sato (Asahi-Kasei/Meijo Univ.), Shinji Yasue, Shohei Teramura, Yuya Ogino (Meijo Univ.), Sho Iwayama (Meijo Univ./Mie Univ.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Akasaki Research Center, Nagoya Univ.), Hideto Miyake (Mie Univ.) ED2019-55 CPM2019-74 LQE2019-98 |
The dependence of threshold pumping power density, optical gain, and internal loss on the dislocation density of AlGaN-b... [more] | ED2019-55 CPM2019-74 LQE2019-98 pp.93-96 |
| ED, LQE, CPM | 2018-11-29 13:25 |
Aichi | Nagoya Inst. tech. | Growth of epitaxial AlInN films on c-plane GaN and the relationship between their alloy compositions and microstructures Mizuki Yamanaka, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. Tech), Tetsuya Takeuchi (Meijo Univ.) ED2018-33 CPM2018-67 LQE2018-87 |
[more] | ED2018-33 CPM2018-67 LQE2018-87 pp.5-8 |
| ED, LQE, CPM | 2018-11-30 12:40 |
Aichi | Nagoya Inst. tech. | GaN-based verticalcavity surfaceemitting lasers with buried SiO2 optical waveguide structures Iida Ryosuke (Meijo Univ.), Natsumi Hayashi, Wataru Muranaga, Syo Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.) ED2018-47 CPM2018-81 LQE2018-101 |
We have investigated buried SiO2 optical waveguide structures towards low threshold current in GaN-based vertical cavity... [more] | ED2018-47 CPM2018-81 LQE2018-101 pp.71-74 |
| LQE, CPM, ED | 2017-12-01 10:30 |
Aichi | Nagoya Inst. tech. | Two-step graded p-AlGaN structure for deep UV-LEDs Hisanori Kojima, Toshiki Yasuda, Daiki Kanbayashi, Kazuyoshi Iida, Norikatsu Koide, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2017-59 CPM2017-102 LQE2017-72 |
[more] | ED2017-59 CPM2017-102 LQE2017-72 pp.49-53 |
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