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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ICD | 2017-04-20 13:50 |
Tokyo | [Invited Lecture]
A 1.0 V Operation NAND Flash Memory Program Voltage Generator Fabricated with Standard CMOS Process and NAND Flash Process for IoT Local Devices Kota Tsurumi, Masahiro Tanaka, Ken Takeuchi (Chuo Univ.)  ICD2017-5 |
NAND flash memory is considered as candidates for data storage of IoT local devices. The NAND flash memory program volta... [more] | ICD2017-5 pp.23-28 |
|
| ICD | 2017-04-20 14:15 |
Tokyo | [Invited Lecture]
TLC NAND Flash Memory Control Techniques to Reduce Errors of Read-Hot and Cold Data for Data Centers Toshiki Nakamura, Atsuro Kobayashi, Ken Takeuchi (Chuo Univ.) ICD2017-6 |
In cloud data centers, NAND flash memory stores both read-hot and cold data. This paper describes that the threshold vol... [more] | ICD2017-6 pp.29-34 |
|
| ICD, CPSY | 2016-12-15 15:30 |
Tokyo | Tokyo Institute of Technology | [Poster Presentation]
Optimal Program Conditions of ReRAM Atsuna Hayakawa, Kazuki Maeda, Ken Takeuchi (Chuo Univ.) ICD2016-65 CPSY2016-71 |
[more] | ICD2016-65 CPSY2016-71 p.49 |
| ICD, CPSY | 2016-12-15 15:30 |
Tokyo | Tokyo Institute of Technology | [Poster Presentation]
Analysis of Read Disturb Error in NAND Flash Memory Hikaru Watanabe, Atsuro Kobayashi, Ken Takeuchi (Chuo Univ.) ICD2016-66 CPSY2016-72 |
Recently, as cloud computing technology and Social Networking Service spread, the applications whose data is read locall... [more] | ICD2016-66 CPSY2016-72 p.51 |
| ICD, CPSY | 2016-12-15 15:30 |
Tokyo | Tokyo Institute of Technology | [Poster Presentation]
High-Speed Operation of Program Voltage Generator for Low-voltage ReRAM Kenta Suzuki, Masahiro Tanaka, Kota Tsurumi, Ken Takeuchi (Chuo Univ.) ICD2016-67 CPSY2016-73 |
Resistive random access memory (ReRAM) is considered as one of the next generation non-volatile memories due to its high... [more] | ICD2016-67 CPSY2016-73 p.53 |
| ICD, CPSY | 2016-12-15 15:30 |
Tokyo | Tokyo Institute of Technology | [Poster Presentation]
Performance Evaluation of Storage Class Memory based SSD in Consideration of Reliability Yutaka Adachi, Hirofumi Takishita, Ken Takeuchi (Chuo Univ.) ICD2016-68 CPSY2016-74 |
The future Storage Class Memory (SCM) is equivalent to NAND Flash in terms of cost. SCM is high performance compared wit... [more] | ICD2016-68 CPSY2016-74 p.55 |
| ICD, CPSY | 2016-12-15 15:30 |
Tokyo | Tokyo Institute of Technology | [Poster Presentation]
Error Pattern Analysis among Scaled Generations of NAND Flash Memories Yukiya Sakaki, Yusuke Yamaga, Ken Takeuchi (Chuo Univ.) ICD2016-69 CPSY2016-75 |
The capacity of NAND flash memory can be expanded by memory cell scaling. However, bit-errors are increased by memory ce... [more] | ICD2016-69 CPSY2016-75 p.57 |
| ICD, CPSY | 2016-12-15 15:30 |
Tokyo | Tokyo Institute of Technology | [Poster Presentation]
Error Tendency Analysis of Endurance in ReRAM Shouhei Fukuyama, Kazuki Maeda, Ken Takeuchi (Chuo Univ.) ICD2016-70 CPSY2016-76 |
Resistive random access memory (ReRAM) attracts attention as one of the storage class memory (SCM) because of its high s... [more] | ICD2016-70 CPSY2016-76 p.59 |
| ICD, CPSY | 2016-12-15 15:30 |
Tokyo | Tokyo Institute of Technology | [Poster Presentation]
Performance Evaluation of Hybrid SSD with Storage Class Memory Performance Atsuya Suzuki, Yusuke Sugiyama, Ken Takeuchi (Chuo Univ.) ICD2016-71 CPSY2016-77 |
[more] | ICD2016-71 CPSY2016-77 p.61 |
| ICD, CPSY | 2016-12-15 15:30 |
Tokyo | Tokyo Institute of Technology | [Poster Presentation]
Error Analysis of NAND Flash Memories for Long-Term Storage Kyoji Mizoguchi, Tomonori Takahashi, Seiichi Aritome, Ken Takeuchi (Chuo Univ.) ICD2016-72 CPSY2016-78 |
Recently, a digital data on art, culture and history which required data-retention (DR) time from 10 to 100 years or mor... [more] | ICD2016-72 CPSY2016-78 p.63 |
| ICD, CPSY | 2016-12-15 15:30 |
Tokyo | Tokyo Institute of Technology | [Poster Presentation]
A Highly Reliable Method with Data-Retenrion Characteristics in TLC NAND Flash Memories Toshiki Nakamura, Yoshiaki Deguchi, Ken Takeuchi (Chuo Univ.) ICD2016-73 CPSY2016-79 |
The capacity of NAND flash memory can be expanded by multi-level cell technology. In particular, 3-bit/cell triple-level... [more] | ICD2016-73 CPSY2016-79 p.65 |
| ICD, CPSY | 2016-12-15 15:30 |
Tokyo | Tokyo Institute of Technology | [Poster Presentation]
Reduction of Data-Retention Error in TLC NAND Flash Memories Yuichi Sato, Yoshiaki Deguchi, Atsuro Kobayashi, Ken Takeuchi (Chuo Univ.) ICD2016-76 CPSY2016-82 |
The cost of NAND flash memory is reduced by scaling and multi-level cell technologies. However, the reliability of tripl... [more] | ICD2016-76 CPSY2016-82 p.75 |
| VLD, DC, CPSY, RECONF, CPM, ICD, IE (Joint) [detail] |
2016-11-29 09:25 |
Osaka | Ritsumeikan University, Osaka Ibaraki Campus | Optimal configuration design of SCM and MLC/TLC NAND flash memory in semiconductor storage system Chihiro Matsui, Yusuke Yamaga, Yusuke Sugiyama, Ken Takeuchi (Chuo Univ.) CPM2016-77 ICD2016-38 IE2016-72 |
In order to manage wide variety of data at high speed, a tri-hybrid storage system has been proposed with using storage ... [more] | CPM2016-77 ICD2016-38 IE2016-72 pp.7-10 |
| VLD, DC, CPSY, RECONF, CPM, ICD, IE (Joint) [detail] |
2016-11-30 14:35 |
Osaka | Ritsumeikan University, Osaka Ibaraki Campus | ReRAM Write Voltage Generator with Low Supply Voltage Operation and Optimized Comparator Bias-Current Scheme for IoT Edge Device Kota Tsurumi, Masahiro Tanaka, Ken Takeuchi (Chuo Univ.) CPM2016-89 ICD2016-50 IE2016-84 |
Resistive random access memory (ReRAM) is considered as candidates for IoT Edge device because of the high-speed and low... [more] | CPM2016-89 ICD2016-50 IE2016-84 pp.69-74 |
| ICD | 2016-04-14 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
A 0.6V Operation ReRAM Program Voltage Generator with Adaptively Optimized Comparator Bias-Current for Batteryless IoT Local Device Masahiro Tanaka, Tomoya Ishii, Shogo Hachiya, Sheyang Ning, Ken Takeuchi (Chuo Univ.) ICD2016-6 |
Resistive RAM (ReRAM) is considered as candidates for batteryless IoT local device because of the low voltage and low po... [more] | ICD2016-6 pp.27-32 |
| ICD | 2016-04-15 09:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Faster LBA scrambler utilized SSD with Garbage Collection Optimization Chihiro Matsui, Asuka Arakawa, Chao Sun, Tomoko Ogura Iwasaki, Ken Takeuchi (Chuo Univ.) ICD2016-13 |
(To be available after the conference date) [more] | ICD2016-13 pp.65-69 |
| ICD | 2016-04-15 09:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Design of SCM/NAND Flash Hybrid SSD System for Each Data Access Pattern Tomoaki Yamada, Shun Okamoto, Chao Sun, Shogo Hachiya, Tomoko Ogura Iwasaki, Ken Takeuchi (Chuo Univ.) ICD2016-14 |
[more] | ICD2016-14 pp.71-76 |
| ICD | 2016-04-15 10:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Highly Reliable Method for Long-Term Semiconductor Data Storage Tomonori Takahashi, Senju Yamazaki, Shuhei Tanakamaru, Tomoko Ogura Iwasaki, Shogo Hachiya, Ken Takeuchi (Chuo Univ.) |
[more] | |
| ICD, CPSY | 2015-12-17 16:00 |
Kyoto | Kyoto Institute of Technology | [Poster Presentation]
Performance Evaluation of Solid-State-Drives (SSDs) by Considering the effect of Error-correcting code Yusuke Yamaga, Tsukasa Tokutomi, Atsuro Kobayashi, Ken Takeuchi (Chuo Univ.) ICD2015-71 CPSY2015-84 |
In the NAND flash memory based solid-state drives (SSDs), reliability is guaranteed by error correcting code (ECC). Conv... [more] | ICD2015-71 CPSY2015-84 p.41 |
| ICD, CPSY | 2015-12-17 16:00 |
Kyoto | Kyoto Institute of Technology | [Poster Presentation]
The Evaluation of Hybrid SSD performance Dependency on the Data Acces pattern Yusuke Sugiyama, Tomoaki Yamada, Ken Takeuchi (Chuo univ.) ICD2015-72 CPSY2015-85 |
Hybrid Solid-state drive (SSD) is comprised of NAND flash memory and storage class memory (SCM). Since the performance o... [more] | ICD2015-72 CPSY2015-85 p.43 |
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