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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 7 of 7  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, CPM, LQE 2021-11-26
16:50		 Online Online Demonstration of E-mode operation in planar type EID-MOS-HEMT with normally depleted AlGaN/GaN epitaxial layer
Takuma Nanjo, Takashi Imazawa, Akira Kiyoi, Tetsuro Hayashida, Tatsuro Watahiki, Naruhisa Miura (Mitsubishi Electric Corp.) ED2021-36 CPM2021-70 LQE2021-48		  [more] ED2021-36 CPM2021-70 LQE2021-48
pp.95-98
CS, OCS
(Joint)		 2018-01-29
15:20		 Ehime Ehime University Experimental Investigation into Burst-Mode Wavelength Drift of a 10 Gb/s EML for TWDM-PON
Takanori Kawanaka, Tetsuro Ashida, Satoshi Yoshima, Kazuyuki Ishida (Mitsubishi Electric Corp.) OCS2017-69		 (Advance abstract in Japanese is available) [more] OCS2017-69
pp.13-18
CPM, LQE, ED 2016-12-12
15:45		 Kyoto Kyoto University Normally-off operation of planar GaN MOS-HFET
Takuma Nanjo, Tetsuro Hayashida, Hidetoshi Koyama, Akifumi Imai, Akihiko Furukawa, Mikio Yamamuka (Mitsubishi Electric) ED2016-63 CPM2016-96 LQE2016-79		 Normally-off operation with high drain current density was firstly demonstrated in simple planar type GaN MOS-HFET with ... [more] ED2016-63 CPM2016-96 LQE2016-79
pp.31-34
OCS, OPE 2015-05-15
13:30		 Tokyo Kikai-Shinko-Kaikan Bldg(Tokyo) [Invited Talk] Report on OFC2015 : Optical Access
Tetsuro Ashida (MitsubishiElectric) OCS2015-2 OPE2015-2		 This paper reviews the latest key technology on optical access systems reported in OFC 2015 which was held at Convention... [more] OCS2015-2 OPE2015-2
pp.5-8
ITE-MMS, ITE-CE, MRIS [detail] 2012-01-20
09:30		 Osaka   A Study of Implementation of Pointing Device in Digital TV
Hiroaki Takahashi, Tetsuro Shida, Keiichi Muneishi (Mitsubishi Electric Corp.) 		 [more]
ITE-MMS, MRIS, ITE-CE [detail] 2011-01-20
15:30		 Osaka Shoshin-Kaikan Bldg. A Study of Efficient Method for Searching Digital Television Program using Genre Information
Hiroaki Takahashi, Tetsuro Shida, Hideaki Kosaka (Mitsubishi Electric) 		 [more]
ICD, SDM 2010-08-27
16:25		 Hokkaido Sapporo Center for Gender Equality On the Gate-Stack Origin Threshold Voltage Variability in Scaled FinFETs and Multi-FinFETs
Yongxun Liu, Kazuhiko Endo, Shinich Ouchi (AIST), Takahiro Kamei (Meiji Univ.), Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa (AIST), Tetsuro Hayashida (Meiji Univ.), Kunihiro Sakamoto, Takashi Matsukawa (AIST), Atsushi Ogura (Meiji Univ.), Meishoku Masahara (AIST) SDM2010-151 ICD2010-66		 The threshold voltage (Vt) variability in scaled FinFETs with gate length down to 20 nm was systematically investigated.... [more] SDM2010-151 ICD2010-66
pp.149-154
 Results 1 - 7 of 7  /   
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