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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, ICD | 2013-08-02 09:00 |
Ishikawa | Kanazawa University | SRAM Cell Stability Parameter: Noise Margin or Vmin? Anil Kumar, Takuya Saraya (Univ. of Tokyo), Shinji Miyano (STARC), Toshiro Hiramoto (Univ. of Tokyo)  SDM2013-74 ICD2013-56 |
This paper reports the comprehensive analysis of the stability parameter of SRAM cells. Results show that even if noise ... [more] | SDM2013-74 ICD2013-56 pp.43-46 |
| SDM, ED | 2013-02-28 09:00 |
Hokkaido | Hokkaido Univ. | Integration of CMOS 1-bit Analog Selector and Single-Electron Transistors Operating at Room Temperature Ryota Suzuki, Motoki Nozue, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo) ED2012-137 SDM2012-166 |
In this paper, integrated circuit operation of CMOS analog selector circuits and silicon single-electron transistors is ... [more] | ED2012-137 SDM2012-166 pp.47-52 |
| ICD, SDM | 2012-08-02 10:00 |
Hokkaido | Sapporo Center for Gender Equality, Sapporo, Hokkaido | Self-Improvement of Cell Stability in SRAM by Post Fabrication Technique Anil Kumar, Takuya Saraya (Univ. of Tokyo), Shinji Miyano (STARC), Toshiro Hiramoto (Univ. of Tokyo) SDM2012-65 ICD2012-33 |
The post fabrication technique for self-improvement of SRAM cell stability is validated by experiment using 1k DMA SRAM ... [more] | SDM2012-65 ICD2012-33 pp.13-16 |
| ICD, SDM | 2010-08-27 13:20 |
Hokkaido | Sapporo Center for Gender Equality | Direct Measurement and Analysis of Static Noise Margin in SRAM Cells Using DMA TEG Toshiro Hiramoto, Makoto Suzuki, Takuya Saraya, Ken Shimizu (Univ. of Tokyo), Akio Nishida, Shiro Kamohara, Kiyoshi Takeuchi, Tohru Mogami (MIRAI-Selete) SDM2010-144 ICD2010-59 |
[more] | SDM2010-144 ICD2010-59 pp.111-114 |
| ICD, SDM | 2009-07-16 15:00 |
Tokyo | Tokyo Institute of Technology | Mobility in Silicon Nanowire GAA Transistor on (110) SOI Jiezhi Chen, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo.) SDM2009-105 ICD2009-21 |
Systematic study on hole mobility in gate-all-around (GAA) multiple Si nanowire (NW) pFETs on (110) SOI is described, ut... [more] | SDM2009-105 ICD2009-21 pp.45-48 |
| SDM, ED | 2009-02-27 09:50 |
Hokkaido | Hokkaido Univ. | Silicon Nanowire pMOSFETs and Single-Hole Transistors at Room Temperature under Uniaxial Strain YeonJoo Jeong, Chen Jiezhi, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo) ED2008-234 SDM2008-226 |
Uniaxial strain effects on NW pFET and SHT are investigated. In the NW pFET, considerably larger current modulation tha... [more] | ED2008-234 SDM2008-226 pp.59-62 |
| ICD, SDM | 2006-08-18 09:25 |
Hokkaido | Hokkaido University | Experimental Study on Breakdown of Mobility Universality in (110)-oriented <100>-directed pMOSFETs Ken Shimizu, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo) |
(110)-oriented pMOSFET is a promising choice for future CMOS device. However, physical origin of breakdown on mobility u... [more] | SDM2006-143 ICD2006-97 pp.105-109 |
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