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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2021-01-28 15:35 |
Online |
Online |
[Invited Talk]
Evaluation of Defects in Si Substrates Introduced by Stochastic Lateral Straggling during Plasma Exposure and Its Impact on Ultra-low Leakage Devices Yoshihiro Sato, Takayoshi Yamada, Kazuko Nishimura, Masayuki Yamasaki, Masashi Murakami (Panasonic), Keiichiro Urabe, Koji Eriguchi (Kyoto Univ.) SDM2020-53 |
In the design of ultra-low leakage devices such as image sensors, it is critical to understand the distribution of an ex... [more] |
SDM2020-53 pp.17-20 |
SDM |
2013-06-18 17:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
4H-SiC MOS interface states studied by electron spin resonance spectroscopy T. Umeda (Univ. of Tsukuba), M. Okamoto, R. Kosugi (AIST), R. Arai, Y. Satoh (Univ. of Tsukuba), S. Harada, Hajime Okumura (AIST), T. Makino, Takeshi Ohshima (JAEA) SDM2013-64 |
Normally-off 4H-SiC MOSFETs (Metal-Oxide-Semiconductor Field Effect Transistors) are promising devices for power electro... [more] |
SDM2013-64 pp.101-105 |
ITS, IE, ITE-AIT, ITE-HI, ITE-ME [detail] |
2013-02-19 12:00 |
Hokkaido |
Hokkaido Univ. |
3D Modeling of Long Tunnel in a Highway and its Evaluation
-- Dense Measurement and Absolute Localization -- Shintaro Ono, Liang Xue, Atsuhiko Banno, Takeshi Oishi, Yoshihiro Sato, Katsushi Ikeuchi (Univ. of Tokyo) ITS2012-51 IE2012-131 |
Precise and accurate 3D model of a road structure is basic information that can be utilized for various purposes, such a... [more] |
ITS2012-51 IE2012-131 pp.299-304 |
ED, LQE, CPM |
2009-11-20 14:25 |
Tokushima |
Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) |
Large Current operation of GaN MOSFETs Takehiko Nomura, Hiroshi Kambayashi, Yoshihiro Satoh, Yuki Niiyama, Sadahiro Kato (Advanced Power Device Research Association) ED2009-156 CPM2009-130 LQE2009-135 |
A large current operation of GaN-based MOSFET on Si substrate is reported. To realize both low on-resistance and high br... [more] |
ED2009-156 CPM2009-130 LQE2009-135 pp.133-137 |
ED |
2008-10-23 13:50 |
Fukuoka |
Kyushu Institute of Technology |
High-power AlGaN/GaN HFETs on 4-inch Si substrates Nariaki Ikeda, Syuusuke Kaya, Jiang Li, Takuya Kokawa, Yoshihiro Sato, Sadahiro Kato (Furukawa Electric) ED2008-148 |
[more] |
ED2008-148 pp.139-142 |
SDM |
2007-03-15 13:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Reset switching mechanism of ReRAM using thermal reaction model Yoshihiro Sato, Kentaro Kinoshita, Hideyuki Noshiro, Masaki Aoki, Yoshihiro Sugiyama (FUJITSU LAB.) |
We investigated the resistive memory (ReRAM) cells with binary metal oxide (BMO) junctions by applying a short voltage p... [more] |
SDM2006-255 pp.7-10 |
ICD, SDM |
2005-08-19 13:00 |
Hokkaido |
HAKODATE KOKUSAI HOTEL |
A Novel Voltage Sensing 1T/2MTJ Cell with Resistance Ratio for Highly Stable and Scalable MRAM Masaki Aoki, Hiroshi Iwasa, Yoshihiro Sato (Fujitsu Lab) |
We propose a new scalable MRAM cell that consists of one transistor (1T) and two magnetic tunnel junctions (2MTJ), and c... [more] |
SDM2005-150 ICD2005-89 pp.43-48 |
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