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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2009-12-04 11:20 |
Nara | NAIST | Characteristics of hot hole injection, trapping, and detrapping in gate oxide of poly-Si TFTs Yoshinari Kamakura (Osaka Univ.), Takashi Himukashi (Osaka Univ./Kansai Univ.), Hiroshi Tsuji, Kenji Taniguchi (Osaka Univ.)  SDM2009-157 |
The hysteresis observed in the transfer characteristics of n-channel poly-Si TFTs are experimentally investigated and po... [more] | SDM2009-157 pp.35-38 |
| SDM | 2009-11-12 14:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Surface-Potential-Based Drain Current Model for Thin-Film Transistors Hiroshi Tsuji (Osaka Univ/JST), Yoshinari Kamakura, Kenji Taniguchi (Osaka Univ.) SDM2009-138 |
A new surface-potential-based drain current model for polycrystalline silicon thin-film transistors (poly-Si TFTs) is pr... [more] | SDM2009-138 pp.19-22 |
| SDM | 2009-11-13 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Impact of Self-Heating Effect on the Electrical Characteristics of Nanoscale Transistors Yoshinari Kamakura, Nobuya Mori (Osaka Univ./JST), Kenji Taniguchi (Osaka Univ.) SDM2009-142 |
Hot phonon generation and its impact on the current conduction in nanoscale Si-MOSFETs are investigated using numerical ... [more] | SDM2009-142 pp.39-44 |
| SDM [detail] | 2008-11-14 15:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A Quantum Mechanical Study of Effect of Single Attractive Ions on Electron Transport in Nanoscale Transistors Yoshinari Kamakura, Gennady Mil'nikov, Nobuya Mori (Osaka Univ.), Tatsuya Ezaki (Hiroshima Univ.) SDM2008-179 |
A comprehensive and rigorous study of the impact of single attractive ion in undoped channel MGFETs is presented by usin... [more] | SDM2008-179 pp.61-66 |
| SDM | 2007-12-14 11:00 |
Nara | Nara Institute Science and Technology | Analysis of Capacitance-Voltage Characteristics of Poly-Si TFTs using Device Simulation Tsuyoshi Kuzuoka, Hiroshi Tsuji, Masaharu Kirihara, Yoshinari Kamakura, Kenji Taniguchi (Osaka Univ.) SDM2007-225 |
Capacitance-voltage characteristics of short channel Poly-Si TFTs containing only a single grain boundary were investiga... [more] | SDM2007-225 pp.15-18 |
| SDM, VLD | 2007-10-30 10:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Simulation on the electric conduction of semiconductor with arrayed dopant Tomohide Terunuma, Takanobu Watanabe (Waseda Univ.), Takahiro Shinada (ASMeW), Yoshinari Kamakura, Kenji Taniguchi (Osaka Univ.), Iwao Ohdomari (Waseda Univ.) VLD2007-50 SDM2007-194 |
[more] | VLD2007-50 SDM2007-194 pp.1-4 |
| SDM, VLD | 2007-10-30 10:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Coarse-grain quantum transport simulation of ultra-small MOSFETs Gennady Mil'nikov, Nobuya Mori, Yoshinari Kamakura (Osaka Univ.), Tatsuya Ezaki (Hiroshima Univ.) VLD2007-52 SDM2007-196 |
[more] | VLD2007-52 SDM2007-196 pp.11-14 |
| SDM, VLD | 2007-10-30 15:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Validation of the Effect of Full Stress Tensor in HoleTransport in Strained 65nm-node pMOSFETs Eiji Tsukuda (Renesas), Yoshinari Kamakura (Osaka Univ.), Hiroyuki Takashino, Takeshi Okagaki, Tetsuya Uchida, Takashi Hayashi, Motoaki Tanizawa, Katsumi Eikyu, Shoji Wakahara, Kiyoshi Ishikawa, Osamu Tsuchiya, Yasuo Inoue (Renesas), Kenji Taniguchi (Osaka Univ.) VLD2007-59 SDM2007-203 |
We have developed a system consisting of a full-3D process simulator for stress calculation and k·pband calculation... [more] | VLD2007-59 SDM2007-203 pp.43-46 |
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