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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM, EID | 2017-12-22 16:30 |
Kyoto | Kyoto University | Study for hole- or electron- conduction of DNA/Si-MOSFET Hibiki Nakano, Matsuo Naoto, Akira Heya, Tadao Takada, Kazusige Yamana (Univ. of Hyogo), Tadashi Sato, Shin Yokoyama (Univ. Hiroshima), Omura Yasuhisa (Univ.Kansai)  EID2017-28 SDM2017-89 |
[more] | EID2017-28 SDM2017-89 pp.85-88 |
| SDM | 2016-11-10 13:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Potential and Prospects of Low-Energy SOI Devices in Sensor Network Era Yasuhisa Omura (Kansai Univ.) SDM2016-81 |
This paper discusses, in detail, the potential and prospects of various SOI devices including SOI TFETs. Device perform... [more] | SDM2016-81 pp.15-22 |
| SDM, OME | 2016-04-08 13:40 |
Okinawa | Okinawa Prefectural Museum & Art Museum | [Invited Talk]
Blockade and Staircase Phenomena of Holes in Mesoscopic Scale λ-Deoxyribonucleic Acid (DNA)/SiO2/Si Structure Naoto Matsuo, Tadao Takada, Akira Heya, Kazushuge Yamana (Univ Hyogo), Tadashi Sato, Shin Yokoyama (Hirosima Univ), Yasuhisa Omura (Kansai Univ) SDM2016-4 OME2016-4 |
[more] | SDM2016-4 OME2016-4 pp.17-22 |
| EID, SDM | 2015-12-14 11:15 |
Kyoto | Ryukoku University, Avanti Kyoto Hall | Study of Deoxyribonucleic Acid (DNA) for Channel Materials of MOSFET
-- Non-Coulomb Blockade/Staircase Phenomena -- Naoto Matsuo, Fumiya Nakamura, Tadao Takada, Kazushige Yamana, Akira Heya (Univ Hyogo), Shin Yokoyama (Hiroshima Univ), Yasuhisa Omura (Kansai Univ) EID2015-10 SDM2015-93 |
[more] | EID2015-10 SDM2015-93 pp.5-7 |
| SDM | 2014-11-06 10:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | An Analytical Modeling for Asymmetric Double Gate Tunnel Field Effect Transistor Lv Hongfei, Shingo Sato, Yasuhisa Omura (Kansai Univ.), Abhijit Mallik (Univ. Calcutta) SDM2014-96 |
In this paper, a two-dimensional analytical potential model for the asymmetric double-gate tunnel field transistor (ADG-... [more] | SDM2014-96 pp.1-6 |
| SDM | 2014-11-06 10:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Physics-based Analytical Model for Gate-on-Germanium Source (GoGeS) TFET Yasuhisa Omura, Shingo Sato (Kansai Univ.), Abhijit Mallik (Univ. Calcutta) SDM2014-97 |
[more] | SDM2014-97 pp.7-12 |
| SDM | 2013-11-15 10:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Physical Model and Simulations on Resistive Transition of Pt/TiO2/Pt Capacitor Yasuhisa Omura, Yusuke Kondo (Kansai Univ.) SDM2013-108 |
This study tries to reproduce the unipolar “forming” process and the “reset” process of the Pt/TiO2/Pt capacitor. It is... [more] | SDM2013-108 pp.49-54 |
| SDM | 2013-11-15 11:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Theoretical Modeling of Double-Gate Lateral Tunnel FET Yasuhisa Omura, Daiki Sato, Shingo Sato (Kansai Univ.), Abhijit Mallik (Univ. of Calcuitta) SDM2013-109 |
This paper proposes a physics-based analytical device model with the non-local effect for the double-gate lateral TFET i... [more] | SDM2013-109 pp.55-60 |
| SDM | 2010-11-12 15:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Design Feasibility of Si Wire GAA MOSFET
-- Analytical model for the design guideline -- Shunsuke Nakano, Yasuhisa Omura (Kansai Univ.) SDM2010-184 |
This paper proposes a simple model to examine the design feasibility of Si wire gate-all-around (GAA) metal-oxide-semico... [more] | SDM2010-184 pp.71-76 |
| SDM | 2009-11-13 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Tutorial Invited Lecture]
Possible Performance of SOI Devices, their Potentiality and Prospects
-- Past Constraint and Current Issues -- Yasuhisa Omura (Kansai Univ.) SDM2009-146 |
This report summarizes the present stage of SOI MOSFET technology and the aim and prospect of 3-D scaled MOSFET technolo... [more] | SDM2009-146 pp.61-66 |
| SDM [detail] | 2008-11-14 11:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Impact of Non-parabolic Band on Threshold Voltage Shift of Nano-sacle SOI MOSFET
-- Proposal of Model and Examination of its Availability -- Daisuke Kyokane, Yasuhisa Omura (Kansai Univ.) SDM2008-176 |
[more] | SDM2008-176 pp.43-48 |
| MW, ED | 2007-01-18 14:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A study on material measurement methods using FDTD simulation techniques
-- Measurements of surface resistance of metals and dielectric plates including semiconductor wafer in millimeter-wave range -- Yukio Iida, Koichi Nakao, Yasuhisa Omura, Susumu Tamura (Kansai Univ.) |
[more] | ED2006-221 MW2006-174 pp.115-120 |
| SDM, VLD | 2006-09-26 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | To be announced Yoshimasa Yoshioka, Yasuhisa Omura (Kansai Univ.) |
[more] | VLD2006-44 SDM2006-165 pp.31-36 |
| SDM, VLD | 2006-09-26 14:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | To be announced Tsuyoshi Yamamura, Shingo Sato, Yasuhisa Omura (Kansai Univ.) |
[more] | VLD2006-46 SDM2006-167 pp.43-48 |
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