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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2010-10-22 15:20 |
Miyagi | Tohoku University | Development of Automated System of Ultra-Accelerated Quantum Chemical Molecular Dynamics Method and Its Application to Silicon/Insulator Interface Formation Technologies Hideyuki Tsuboi, Kenji Inaba, Mariko Ise, Yukie Hayashi, Yuka Suzuki, Hiromi Sato, Yukiko Obara, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)  SDM2010-168 |
The automated system of ultra-accelerated quantum chemical molecular dynamics method (UA-QCMD) has been developed. The n... [more] | SDM2010-168 pp.67-68 |
| SDM | 2010-10-22 15:50 |
Miyagi | Tohoku University | Dry, Wet and Radical Oxidation Simulation of Silicon Surface Using Automated System of Ultra-Accelerated Quantum Chemical Molecular Dynamics Method Hideyuki Tsuboi, Mariko Ise, Yukie Hayashi, Yuka Suzuki, Hiromi Sato, Yukiko Obara, Kenji Inaba, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.) SDM2010-169 |
Using our newly developed automated system of ultra-accelerated quantum chemical molecular dynamics method, we have inve... [more] | SDM2010-169 pp.69-70 |
| ED | 2010-06-17 15:15 |
Ishikawa | JAIST | Fabrication of high-frequency and high-power AlGaN/GaN HEMTs Yoshimi Yamashita, Issei Watanabe, Akira Endoh, Nobumitsu Hirose, Toshiaki Matsui (NICT), Takashi Mimura (NICT/Fujitsu lab.) ED2010-38 |
High-power AlGaN/GaN high electron mobility transistors (HEMTs) are the most promising devices for future high-speed and... [more] | ED2010-38 pp.25-30 |
| ED | 2009-11-29 15:30 |
Osaka | Osaka Science & Technology Center | Effect of Gate-Recess Structure on Electron Transport in Nanogate InP-HEMTs Studied by Monte Carlo Simulations Akira Endoh, Issei Watanabe (NICT), Takashi Mimura (NICT/Fujitsu Labs.), Toshiaki Matsui (NICT) ED2009-163 |
To achieve millimeter-wave and THz-wave operations of InP-based HEMTs, gate length Lg must be reduced. In addition, gate... [more] | ED2009-163 pp.19-23 |
| ED, LQE, CPM | 2009-11-20 15:50 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Output characteristics of AlGaN/GaN HEMTs at 60 GHz frequency band Issei Watanabe, Akira Endoh, Yoshimi Yamashita, Nobumitsu Hirose (NICT), Takashi Mimura (NICT/Fujitsu Labs.), Toshiaki Matsui (NICT) ED2009-159 CPM2009-133 LQE2009-138 |
AlGaN/GaN high electron mobility transistors (HEMTs) are the most promising devices for future high-speed and long-range... [more] | ED2009-159 CPM2009-133 LQE2009-138 pp.151-155 |
| SDM | 2009-10-30 09:30 |
Miyagi | Tohoku University | An Analysis of Carrier Transfer in Conjugated Polymers by Luminescence Computational Chemistry Itaru Yamashita, Kazumi Serizawa, Hiroaki Onuma, Ai Suzuki, Ryuji Miura, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ) SDM2009-124 |
[more] | SDM2009-124 pp.37-38 |
| SDM | 2009-10-30 10:00 |
Miyagi | Tohoku University | Computational Simulation for High Performance Protecting Layer of Plasma Displays Kazumi Serizawa, Hiroaki Onuma (Tohoku Univ.), Hiromi Kikuchi (Tohoku Univ./Hiroshima Univ.), Kazuma Suesada, Masaki Kitagaki (Hiroshima Univ.), Itaru Yamashita, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo (Tohoku Univ.), Hiroshi Kajiyama (Hiroshima Univ.), Akira Miyamoto (Tohoku Univ.) SDM2009-125 |
In order to reduce the power requirement of plasma display panel, it is effective to increase the secondary electron emi... [more] | SDM2009-125 pp.39-40 |
| SDM | 2009-10-30 10:30 |
Miyagi | Tohoku University | Prediction of emission peak wavelength of Eu2+-doped phosphors using quantum chemistry and QSPR method Hiroaki Onuma, Itaru Yamashita, Kazumi Serizawa, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.) SDM2009-126 |
[more] | SDM2009-126 pp.41-42 |
| SDM | 2009-10-30 15:15 |
Miyagi | Tohoku University | Oxy-nitridation Simulation of Silicon Surface Using Antomated System of Ultra-Accelerated Quantum Chemical Molecular Dynamics Method Hideyuki Tsuboi, Ai Suzuki, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.) SDM2009-133 |
Using our newly developed automated system of ultra-accelerated quantum chemical molecular dynamics method, we have inve... [more] | SDM2009-133 pp.75-76 |
| SCE | 2009-01-29 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg | EFFECT OF THE ENERGY-GAP BROADENING ON SUBGAP CURRENT OF SIS JUNCTIONS Takashi Noguchi, Toyoaki Suzuki, Akira Endo, Tomonori Tamura (National Astronomical Observatory) SCE2008-34 |
(To be available after the conference date) [more] | SCE2008-34 pp.11-16 |
| SCE | 2009-01-29 14:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Origin of subgap current in an SIS junction Toyoaki Suzuki, Takashi Noguchi, Akira Endo, Hiroshi Matsuo (National Astronomical Observatory of Japan) SCE2008-35 |
The subgap current in an SIS junction is reduced exponentially as the temperature decreases. However, the reduction is s... [more] | SCE2008-35 pp.17-21 |
| MW, ED | 2009-01-15 14:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg | High-frequency and low-noise performances of InP-based HEMTs for millimeter-wave monolithic integrated circuits Issei Watanabe, Akira Endoh (National Inst. of Info.&Com. Tech.), Takashi Mimura (National Inst. of Info.&Com. Tech/Fujitsu Lab. Limited,), Toshiaki Matsui (National Inst. of Info.&Com. Tech.) ED2008-214 MW2008-179 |
InP-based high electron mobility transistors (HEMTs) are the most promising devices not only for future high-speed and h... [more] | ED2008-214 MW2008-179 pp.95-99 |
| MW, ED | 2009-01-16 09:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Effect of Temperature on Cryogenic DC and RF Characteristics of AlGaN/GaN MIS-HEMTs Akira Endoh, Issei Watanabe, Yoshimi Yamashita (National Inst. of Info and Com Tech.), Takashi Mimura (National Inst. of Info and Com Tech/Fujitsu Lab Ltd.,), Toshiaki Matsui (National Inst. of Info and Com Tech.) ED2008-219 MW2008-184 |
We fabricated AlGaN/GaN MIS-HEMTs (metal-insulator-semiconductor high electron mobility transistors) with SiN/SiO2/SiN t... [more] | ED2008-219 MW2008-184 pp.119-123 |
| ED | 2008-12-19 15:05 |
Miyagi | Tohoku Univ. | Ultrahigh-Speed Operations of InAlAs/In0.7Ga0.3As HEMTs under Cryogenic Conditions Akira Endoh, Issei Watanabe (NICT), Keisuke Shinohara (NICT/HRL Labs.), Takashi Mimura (Fujitsu Labs.), Toshiaki Matsui (NICT) ED2008-187 |
DC and RF characteristics at 300 and 16 K of In0.52Al0.48As/In0.7Ga0.3As HEMTs were measured in the gate length Lg range... [more] | ED2008-187 pp.15-20 |
| SDM | 2008-10-09 15:00 |
Miyagi | Tohoku Univ. | Development of Multi-Scale Simulator for lifetime of Interconnect and its application to Cu lines Hideyuki Tsuboi, Ai Suzuki, Riadh Sahnoun, Michihisa Koyama, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Carlos A Del Calpio, Momoji Kubo, Akira Miyamoto (Tohoku Univ.) SDM2008-152 |
[more] | SDM2008-152 pp.17-18 |
| SDM | 2008-10-09 15:45 |
Miyagi | Tohoku Univ. | Computational Study on Friction Behavior and Nanostructure of Diamond-like Carbon (DLC) Takanori Kuriaki, Yusuke Morita, Tasuku Onodera, Ai Suzuki, Riadh Sahnoun, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Carlos A. Del Carpio, Momoji Kubo, Akira Miyamoto (Tohoku Univ.) SDM2008-153 |
Industrially, diamond-like carbon (DLC) is one of the useful tribological materials with low friction and anti-wear char... [more] | SDM2008-153 pp.19-20 |
| SDM | 2008-10-09 16:15 |
Miyagi | Tohoku Univ. | Tight-Binding Quantum Chemistry Study on Excitation Properties of Perylene with Acrylic Acid on Anatas(001) Surface Chen Lv, Kei Ogiya, Ai Suzuki, Riadh Sahnoun, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Carlos A. Del Carpio, Momoji Kubo, Akira Miyamoto (Tohoku Univ.) SDM2008-154 |
[more] | SDM2008-154 pp.21-22 |
| SDM | 2008-10-09 16:45 |
Miyagi | Tohoku Univ. | A Computational Study on Secondary Electron Emission property of Protecting Layer for Plasma Display Panels Kazumi Serizawa, Itaru Yamashita, Hiroaki Onuma (Tohoku Univ.), Hiromi Kikuchi (Tohoku Univ./Hiroshima Univ.), Masaki Kitagaki (Hiroshima Univ.), Ai Suzuki, Sahnoun Riadh, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Del Carpio Carlos Del Carpio, Momoji Kubo (Tohoku Univ.), Hiroshi Kajiyama (Hiroshima Univ.) SDM2008-155 |
[more] | SDM2008-155 pp.23-24 |
| SDM | 2008-10-09 17:15 |
Miyagi | Tohoku Univ. | Development of characterization/spectroscopic simulators based on ultra-accelerated quantum chemical molecular dynamics method and its application to Si semiconductors Akira Endou, Itaru Yamashita, Kazumi Serizawa, Hiroaki Onuma, Tasuku Onodera, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Hiromitsu Takaba, Carlos A. Del Carpio, Momoji Kubo, Akira Miyamoto (Tohoku Univ.) SDM2008-156 |
[more] | SDM2008-156 pp.25-28 |
| SDM | 2008-10-10 10:00 |
Miyagi | Tohoku Univ. | Electron Transport Simulation of Dye-sensitized TiO2 Electrode based on 3D Porous Structure Kei Ogiya, Chen Lv, Ai Suzuki, Riadh Sahnoun, Michihisa Koyama, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Carlos A. Del Carpio, Momoji Kubo, Akira Miyamoto (Tohoku Univ.) SDM2008-157 |
[more] | SDM2008-157 pp.29-30 |
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