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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM 2017-02-24
10:00		 Hokkaido Centennial Hall, Hokkaido Univ. Fabrication and evaluation of silicon triple quantum dots with a compact device structure
Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita (IST. Hokkaido Univ.), Akira Fujiwara (NTT BRL), Yasuo Takahashi (IST. Hokkaido Univ.) ED2016-130 SDM2016-147		 Silicon-based multiple quantum-dot with a scalable gate architecture is a promising candidate for quantum information pr... [more] ED2016-130 SDM2016-147
pp.1-6
SDM, ED 2015-02-05
15:05		 Hokkaido Hokkaido Univ. Highly functionality of three-terminal nanodot array for multi-input and multi-output devices
Isamu Yoshioka, Hikaru Satoh, Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita (Hokkaido Univ.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ.) ED2014-141 SDM2014-150		 Nanodot-array single-electron devices with multi-inputs and multi-outputs achieve higher functionality that conventional... [more] ED2014-141 SDM2014-150
pp.17-22
SDM, ED 2013-02-28
09:25		 Hokkaido Hokkaido Univ. Characteristics of double quantum dot Si single-electron transisor caused by the number change of electrons in quantum dot
Takafumi Uchida, Hiroto Takenaka, Isamu Yoshioka, Masashi Arita (Hokkaido Univ), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ) ED2012-138 SDM2012-167		 A double quantum-dot (DQD) device is expected as a key device for quantum information processing as well as a single-ele... [more] ED2012-138 SDM2012-167
pp.53-58
ED, SDM 2012-02-07
15:15		 Hokkaido   High-Frequency Properties of Si Single-Electron Transistors Fabricated by Pattern-Dependent Oxidation
Hiroto Takenaka, Michito Shinohara, Takafumi Uchida, Masashi Arita (Hokkaido Uni.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Uni.) ED2011-145 SDM2011-162		 Single electron transistor (SET) is a low power device. However, the high frequency operation properties have not been i... [more] ED2011-145 SDM2011-162
pp.19-24
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