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 Results 1 - 6 of 6  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, LSJ 2016-05-20
13:50		 Fukui   Tow-color VCSELs based on a coupled multilayer cavity for novel terahertz emission device.
Hiroto Ota, Xiangmeng Lu, Naoto Kumagai, Takahiro Kitada, Toshiro Isu (Tokushima Univ.) LQE2016-15		 We fabricated two-color VCSELs based on a semiconductor coupled cavity structure that have been proposed as novel terahe... [more] LQE2016-15
pp.67-72
EST, OPE, LQE, EMT, PN, MWP, IEE-EMT [detail] 2015-01-30
09:50		 Osaka   Two-Color Surface Emission Based on Coupled Cavity Structure for a Terahertz Light Source
Chiho Harayama, Lu Xiangmeng, Naoto Kumagai, Takahiro Kitada, Toshiro Isu (Tokushima Univ.) PN2014-66 OPE2014-191 LQE2014-178 EST2014-120 MWP2014-88		  [more] PN2014-66 OPE2014-191 LQE2014-178 EST2014-120 MWP2014-88
pp.245-250
ED 2012-12-17
14:15		 Miyagi Tohoku University [Invited Talk] Generation of Terahertz Radiation from a Semiconductor Coupled Multilayer Cavity
Ken Morita, Takahiro Kitada, Toshiro Isu (Univ. of Tokusima) ED2012-96		 We have proposed GaAs/AlAs coupled multilayer cavity structure as terahertz (THz) emission devices. In thestructure, the... [more] ED2012-96
pp.17-21
OPE, OFT 2012-03-02
14:00		 Tokyo   Ultrafast All-Optical Switches using Multilayer Cavity with Er-Doped InAs Quantum Dots Embedded in Strain-Relaxed Barriers
Ken Morita, Hyuga Ueyama, Takahiro Kitada, Toshiro Isu (Univ. of Tokushima) OFT2011-79 OPE2011-205		 In this work, time-resolved optical measurements of GaAs/AlAs multilayer cavities with the Er-doped InAs quantum dots (Q... [more] OFT2011-79 OPE2011-205
pp.31-34
OPE, EMT, LQE, PN, IEE-EMT 2010-01-29
08:55		 Kyoto   Planar-type all optical switches using GaAs/AlAs multilayer cavity with InAs quantum dots embedded in strain-relaxed barriers
Takahiro Kitada, Tomoya Takahashi, Ken Morita, Toshiro Isu (Univ. of Tokushima) PN2009-51 OPE2009-189 LQE2009-171		 A GaAs$\slash$AlAs multilayer cavity containing self-assembled InAs quantum dots (QDs) embedded in strain-relaxed In$_{0... [more] PN2009-51 OPE2009-189 LQE2009-171
pp.85-88
OPE 2005-10-12
14:15		 Tokyo Kikai-Shinko-Kaikan Bldg Planar saturable absorber based on an 1.5μm high-density InAs quantum dots
Jun Inoue, Toshiro Isu, Kouichi Akahane, Naokatsu Yamamoto, Masahiro Tsuchiya (NiCT) 		 [more] OPE2005-68
pp.19-22
 Results 1 - 6 of 6  /   
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