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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 21 - 40 of 42 [Previous]  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, SDM, ED 2011-05-19
17:30		 Aichi Nagoya Univ. (VBL) High-quality AlN/GaN distributed Bragg reflectors grown on AlN templates
Kouta Yagi, Mitsuru Kaga, Kouji Yamashita, Kenichiro Takeda, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijou Univ.), Isamu Akasaki (Meijou Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-18 CPM2011-25 SDM2011-31		 AlN/GaN multilayer structures have relatively large refractive index differences in the group-III nitride semiconductors... [more] ED2011-18 CPM2011-25 SDM2011-31
pp.89-93
CPM, SDM, ED 2011-05-20
09:25		 Aichi Nagoya Univ. (VBL) Current path control with Nitride semiconductor-based tunnel junction
Kouji Yamashita, Mitsuru Kaga, Kouta Yagi (Meijo Univ.), Atsushi Suzuki (EL-SEED Corp.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-20 CPM2011-27 SDM2011-33		 Current path control in nitride semiconductor-based devices with tunnel junctions have been investigated along the follo... [more] ED2011-20 CPM2011-27 SDM2011-33
pp.99-104
CPM, SDM, ED 2011-05-20
09:50		 Aichi Nagoya Univ. (VBL) Fabrication of GaN-based Tunnel Junctions
Mitsuru Kaga, Daisuke Iida (Meijo Univ), Tsukasa Kitano (EL-SEED), Kouji Yamashita, Kouta Yagi, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ), Isamu Akasaki (Meijo Univ/Nagoya Univ), Hiroshi Amano (Nagoya Univ) ED2011-21 CPM2011-28 SDM2011-34		 We have investigated nitride semiconductor-based tunnel junctions for a novel current injection, not restricted with the... [more] ED2011-21 CPM2011-28 SDM2011-34
pp.105-110
CPM, SDM, ED 2011-05-20
10:50		 Aichi Nagoya Univ. (VBL) High reflective electrode for UV light emitting diodes
Kosuke Takehara, Kenichiro Takeda, Kengo Nagata, Hiroki Aoshima, Shun Ito, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Unv.), Hiroshi Amano (Nagoya Univ.) ED2011-23 CPM2011-30 SDM2011-36		 Light extraction efficiency is one of the most critical factors for improving the efficiency of UV-LEDs. Combination of ... [more] ED2011-23 CPM2011-30 SDM2011-36
pp.117-121
CPM, SDM, ED 2011-05-20
11:15		 Aichi Nagoya Univ. (VBL) Aging test of AlGaN-based ultraviolet light emitting diodes -- The Degradation Mechanism of UV-LED --
Park Gwi Jin, Takayuki Sugiyama, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Tetsuhiko Inazu, Takehiko Fujita, Cyril Pernot, Akira Hirano (UV Craftory) ED2011-24 CPM2011-31 SDM2011-37		  [more] ED2011-24 CPM2011-31 SDM2011-37
pp.123-126
CPM, SDM, ED 2011-05-20
11:40		 Aichi Nagoya Univ. (VBL) Internal quantum efficiency of AlGaN multiquantum wells
Junichi Yamamoto, Kazuhito Ban, Kenichiro Takeda, Kimiyasu Ide, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-25 CPM2011-32 SDM2011-38		 We analyzed the IQE of whole-composition-range AlGaN multi-quantum wells (MQWs) on AlGaN with various dislocation densit... [more] ED2011-25 CPM2011-32 SDM2011-38
pp.127-130
CPM, SDM, ED 2011-05-20
15:40		 Aichi Nagoya Univ. (VBL) Fabrication of non-polar a-plane nitride based solar cells
Tatsuro Nakao, Yosuke Kuwahara, Yasuharu Fuziyama, Takahiro Fujii, Toru Sugiyama, Shota Yamamoto, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-32 CPM2011-39 SDM2011-45		 n this study, we fabricated and charactrized nitride-based solar cells on a non-polar a-plane GaN template on an r-plane... [more] ED2011-32 CPM2011-39 SDM2011-45
pp.163-167
CPM, SDM, ED 2011-05-20
16:05		 Aichi Nagoya Univ. (VBL) Fabrication of nitride-based solar cells electrode structure
Shota Yamamoto, Yoshiki Morita, Yosuke Kuwahara, Takahiro Fujii, Toru Sugiyama, Motoaki Iwaya, Satoshi Kamiyama, Tetsuya Takeuchi (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-33 CPM2011-40 SDM2011-46		 We used grid electrode for improving efficiency of nitride-based photovoltaic cell. Compared with the conventional semit... [more] ED2011-33 CPM2011-40 SDM2011-46
pp.169-173
CPM, SDM, ED 2011-05-20
16:40		 Aichi Nagoya Univ. (VBL) Current collapse in GaN-based HFETs -- HFETs on c- and a-GaN substrate/normally-off JHFET with p-GaN gate --
Takayuki Sugiyama, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Yasuhiro Isobe, Yoshinori Oshimura, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.), Mamoru Imade, Yasuo Kitaoka, Yusuke Mori (Osaka Univ.) ED2011-34 CPM2011-41 SDM2011-47		 We measured current collapse in AlGaN/GaN HFETs on an a-plane GaN substrate. Non polar HFETs are promising for realizing... [more] ED2011-34 CPM2011-41 SDM2011-47
pp.175-178
CPM, SDM, ED 2011-05-20
17:05		 Aichi Nagoya Univ. (VBL) Study on AlInN barrier layer of GaInN channel HFET
Kazuya Ikeda, Yasuhiro Isobe, Hiromichi Ikki, Naofumi Horio, Tatsuyuki Sakakibara, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama (Meijo Univ.), Isamu Akasaki (Meijo Univ./Nagoya Univ.), Hiroshi Amano (Nagoya Univ.) ED2011-35 CPM2011-42 SDM2011-48		 GaInN channel heterostructure field-effect transistors (HFETs) are promising for applications involving high operation c... [more] ED2011-35 CPM2011-42 SDM2011-48
pp.179-183
OME 2010-01-20
17:10		 Aichi Meijo Univ. Development and characteristic for the next generation of light therapy equipment using UV-LED
Shunko A Inada, Hiroshi Amano, Isamu Akasaki (Meijo Univ.), Akira Maeda, Akimichi Morita (Nagoya City Univ.) OME2009-86		 We developed photon therapy equipment based on UV LEDs with a peak wavelength of 365 nm and FWHM of 10 nm. The equipment... [more] OME2009-86
pp.37-41
ED, MW 2010-01-14
15:05		 Tokyo Kikai-Shinko-Kaikan Bldg AlGaN channel high electron mobility transistors on AlN substrates.
Shin Hashimoto, Katsushi Akita, Tatsuya Tanabe, Hideaki Nakahata (SEI), Kenichiro Takeda, Hiroshi Amano (Meijo Univ.) ED2009-188 MW2009-171		  [more] ED2009-188 MW2009-171
pp.77-80
ED, LQE, CPM 2009-11-19
15:20		 Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) Thermodynamical aspects for the raised pressure MOVPE for growth of GaInN
Kensuke Nagata, Daisuke Iida, Kentaro Nagamatsu, Kenichiro Takeda, Tetsuya Matsubara, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ) ED2009-140 CPM2009-114 LQE2009-119		 High In content GaInN films are promising for many applications such as multi-junction tandem photovoltaic cells, high p... [more] ED2009-140 CPM2009-114 LQE2009-119
pp.57-60
ED, LQE, CPM 2009-11-19
16:10		 Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) Reduction in operating voltage of UV laser diode
Tomoki Ichikawa, Kenichiro Takeda, Yuji Ogiso, Kengo Nagata, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.), Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Hirofumi Kan (Hamamatsu Photonics K.K.) ED2009-142 CPM2009-116 LQE2009-121		 Annealing condition for n-type electrode in AlGaN-based UV LD was investigated. High temperature annealing is found to b... [more] ED2009-142 CPM2009-116 LQE2009-121
pp.65-69
ED, LQE, CPM 2009-11-19
17:10		 Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) High Efficiency ultraviolet emitters by activation annealing in oxygen flow
Kengo Nagata, Tomoki Ichikawa, Kenichiro Takeda, Kentaro Nagamatsu, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.) ED2009-144 CPM2009-118 LQE2009-123		 Activation annealing of Mg-doped p-type Al0.17Ga0.83N in different gases was conducted. The hole concentration in Al0.17... [more] ED2009-144 CPM2009-118 LQE2009-123
pp.75-80
ED 2009-07-30
16:15		 Osaka Osaka Univ. Icho-Kaikan Threshold voltage control and temperature dependence of normally off mode AlGaN/GaN HFET with p-type GaN gate
Takayuki Sugiyama, Daisuke Iida, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.) ED2009-108		  [more] ED2009-108
pp.33-37
CPM, ED, SDM 2008-05-16
10:25		 Aichi Nagoya Institute of Technology Dislocation in AlGaN grown on grooved AlN
Toshiaki Mori, Toshiaki Asai, Kentaro Nagamatsu, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.) ED2008-12 CPM2008-20 SDM2008-32		  [more] ED2008-12 CPM2008-20 SDM2008-32
pp.57-60
CPM, ED, SDM 2008-05-16
10:50		 Aichi Nagoya Institute of Technology On-resistance and Breakdown Voltage of Enhancement-Mode AlGaN/GaN Junction HFET Using p-GaN Gate Contact
Ryohei Nega, Katsutoshi Mizuno, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.) ED2008-13 CPM2008-21 SDM2008-33		 This paper reports normally-off mode nitride-based field-effect transistor using p-type gate contact. In order to realiz... [more] ED2008-13 CPM2008-21 SDM2008-33
pp.61-66
OME 2008-01-25
16:35		 Aichi Aichi Institute of Technology Development of irradiation device of the UVA1-LED ray treatment.
Shunko A Inada, Hiroshi Amano, Isamu Akasaki (Meijo Univ.), Akimichi Morita (Nagoya City Univ.) OME2007-83		  [more] OME2007-83
pp.55-59
ED, CPM, LQE 2006-10-06
13:40		 Kyoto   Fabrication and Characterization of UV light emitter on various substrates
Hirotaka Watanabe, Kazuyoshi Iida, Kenichiro Takeda, Kentaro Nagamatsu, Takafumi Sumii, Tetsuya Nagai, Krishnan Balakrishnan, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.), Akira Bandoh (Showa-Denko) 		 [more] ED2006-168 CPM2006-105 LQE2006-72
pp.87-92
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