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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| QIT (2nd) |
2012-11-28 09:40 |
Kanagawa | Keio Univ. Hiyoshi Campus | Fundamental Limit to Decoherence Suppression Using Quantum Bang-Bang Control Kazuhiro Igeta (NTT), Nobuyuki Imoto (Osaka. Univ.), Masato Koashi (U.Tokyo) |
[more] | |
| QIT (2nd) |
2012-05-22 10:40 |
Fukui | Fukui Univ. | Phase encoding schemes for measurement device independent quantum key distribution with basis information flaw Kiyoshi Tamaki (NTT BRL), Hoi-Kwong Lo (Univ. of. Toronto), Chi-Hang Fred Fung (Hong Kong Univ.), Bing Qi (Univ. of. Toronto) |
[more] | |
| ED, SDM | 2012-02-07 15:15 |
Hokkaido | High-Frequency Properties of Si Single-Electron Transistors Fabricated by Pattern-Dependent Oxidation Hiroto Takenaka, Michito Shinohara, Takafumi Uchida, Masashi Arita (Hokkaido Uni.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Uni.)  ED2011-145 SDM2011-162 |
Single electron transistor (SET) is a low power device. However, the high frequency operation properties have not been i... [more] | ED2011-145 SDM2011-162 pp.19-24 |
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| ED, SDM | 2012-02-08 11:25 |
Hokkaido | Stochastic resonance using a steep-subthreshold-swing transistor Katsuhiko Nishiguchi, Akira Fujiwara (NTT) ED2011-154 SDM2011-171 |
We demonstrate stochastic resonance (SR) using nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs) wi... [more] | ED2011-154 SDM2011-171 pp.71-76 |
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| QIT (2nd) |
2011-11-21 16:20 |
Osaka | Osaka Univ. Engr. Sci. Sigma Hall (Toyonaka) | Measurement-induced dephasing in superconducting qubit readout with a Josephson bifurcation amplifier: experiment and theory Hayato Nakano, Kosuke Kakuyanagi (NTT BRL) |
[more] | |
| QIT (2nd) |
2011-11-22 12:40 |
Osaka | Osaka Univ. Engr. Sci. Sigma Hall (Toyonaka) | Cheat-sensitive commitment of a classical bit coded in a block of mXn round trip qubits Kaoru Shimizu, Kiyoshi Tamaki (NTT BRL), Nobuyuki Imoto (Osaka University) |
[more] | |
| QIT (2nd) |
2011-11-21 14:40 |
Osaka | Osaka Univ. Engr. Sci. Sigma Hall (Toyonaka) | [Poster Presentation]
Quantum Zeno effect with a superconducting qubit Yuichiro Matsuzaki, Shiro Saito, Kosuke Kakuyanagi, Kouichi Semba (NTT) |
[more] | |
| QIT (2nd) |
2011-11-21 14:40 |
Osaka | Osaka Univ. Engr. Sci. Sigma Hall (Toyonaka) | [Poster Presentation]
Observation of an ultra-narrowband parametric gain in photonic crystal coupled high-Q cavities Nobuyuki Matsuda, Hiroki Takesue, Eiichi Kuramochi, Masaya Notomi (NTT) |
[more] | |
| QIT (2nd) |
2011-11-21 14:40 |
Osaka | Osaka Univ. Engr. Sci. Sigma Hall (Toyonaka) | [Poster Presentation]
Polarization-entangled photon-pair generation using a polarization-rotator-integrated silicon photonic circuit Hanna Le Jeannic, Nobuyuki Matsuda, Hiroki Takesue, Hiroshi Fukuda, Tai Tsuchizawa, Toshifumi Watanabe, Koji Yamada, Seiichi Itabashi, Yasuhiro Tokura (NTT) |
[more] | |
| CPM | 2011-08-10 13:25 |
Aomori | DLTS evaluation of carrier injection and emission properties in In(Ga)As stacked quantum dot structure Soitiro Suzuki, Shinya Sato, Takuro Iwasaki (Hirosaki Univ.), Takehiko Tawara, Kouta Tateno, Hideki Gotoh, Tetsuomi Sogawa (NTT), Hiroshi Okamoto (Hirosaki Univ.) CPM2011-57 |
A ten-layer quantum-dot structure with GsAsP strain-compensation layer grown by using Bi surfactant was evaluated by DLT... [more] | CPM2011-57 pp.7-10 |
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| SDM | 2011-07-04 09:20 |
Aichi | VBL, Nagoya Univ. | Structure and formation of epitaxial graphene on SiC(0001) Hiroyuki Kageshima, Hiroki Hibino, Hiroshi Yamaguchi (NTT Basic Research Labs.), Masao Nagase (Univ. Tokushima) SDM2011-51 |
Epitaxial graphene growth on SiC(0001) surface is theoretically studied by the first-principles calculation. It is found... [more] | SDM2011-51 pp.7-10 |
| SDM, ED | 2011-02-24 11:35 |
Hokkaido | Hokkaido Univ. | Stochastic resonance using single electrons Katsuhiko Nishiguchi, Akira Fujiwara (NTT) ED2010-205 SDM2010-240 |
We demonstrate stochastic resonance (SR) with single electrons (SEs) using nanoscale metal-oxide-semiconductor field-eff... [more] | ED2010-205 SDM2010-240 pp.73-77 |
| LQE | 2010-12-17 14:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Contribution of electron-Cooper-pair to the radiative recombination process in superconducting light emitting diode Hirotaka Sasakura (RIES, Hokkaido Univ.), Kazunori Tanaka (Hamamatsu Photonics K.K.,), Jae-Hoon Huh (RIES, Hokkaido Univ.), Tatsusi Akazaki (NTT Basic Res. Labs.), Hidekazu Kumano, Ikuo Suemune (RIES, Hokkaido Univ.) LQE2010-122 |
We experimentally demonstrate Cooper-pair's drastic enhancement of band-to-band radiative recombination rate in a semico... [more] | LQE2010-122 pp.39-42 |
| CPM | 2009-08-11 12:05 |
Aomori | Hirosaki Univ. | Growth and characterization of telecom-wavelength quantum dots using Bi as a surfactant Hiroshi Okamoto (Hirosaki Univ.), Takehiko Tawara, Hideki Gotoh, Hidehiko Kamada, Tetsuomi Sogawa (NTT) CPM2009-46 |
The effectiveness of adding TMBi during telecom-wavelength-quantum-dot growth on improving its optical quality and exten... [more] | CPM2009-46 pp.67-72 |
| SDM, ED | 2009-06-25 09:00 |
Overseas | Haeundae Grand Hotel, Busan, Korea | [Invited Talk]
Novel-Functional Single-Electron Devices Using Silicon Nanodot Array Yasuo Takahashi, Takuya Kaizawa, Mingyu Jo, Masashi Arita (Hokkaido Univ.), Akira Fujiwar, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Jung-Bum Choi (Chungbuk National Univ.) ED2009-83 SDM2009-78 |
We demonstrate a highly functional Si nanodot array device that operates by means of single-electron effects. The device... [more] | ED2009-83 SDM2009-78 pp.145-148 |
| SDM, ED | 2009-06-26 12:00 |
Overseas | Haeundae Grand Hotel, Busan, Korea | Fabrication of double-dot single-electron transistor in silicon nanowire Mingyu Jo, Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Jung-Bum Choi (Chungbuk National Univ.), Yasuo Takahashi (Hokkaido Univ.) ED2009-94 SDM2009-89 |
We propose a simple method for the fabrication of Si single-electron transistors (SET) with coupled dots by means of pat... [more] | ED2009-94 SDM2009-89 pp.189-192 |
| SDM | 2009-06-19 10:20 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | First-Principles Calculations for Interfacial Reaction during Si Oxidation Toru Akiyama (Mie Univ.), Hiroyuki Kageshima (NTT Corp.), Masashi Uematsu (Keio Univ.), Tomonori Ito (Mie Univ.) SDM2009-28 |
The interfacial reaction processes during Si oxidation are investigated based on first-principles total-energy electroni... [more] | SDM2009-28 pp.9-13 |
| SDM, ED | 2009-02-26 14:10 |
Hokkaido | Hokkaido Univ. | Magnetic properties of Mn-implanyed SOI layers Ｙａｓｕａｋｉ Miyazaki (NTT/Keio Univ.), Yukinori Ono, Hiroyuki Kageshima, Masao Nagase, Akira Fujiwara (NTT), Eiji Ohta (Keio Univ.) ED2008-225 SDM2008-217 |
[more] | ED2008-225 SDM2008-217 pp.7-11 |
| SDM, ED | 2009-02-27 09:25 |
Hokkaido | Hokkaido Univ. | Dual-dot single-electron transistor fabricated in silicon nanowire Mingyu Jo, Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ.) ED2008-233 SDM2008-225 |
It is well known that a Si single-electron transistor (SET) is automatically fabricated by means of pattern-dependent ox... [more] | ED2008-233 SDM2008-225 pp.53-58 |
| SDM, ED | 2008-07-10 09:00 |
Hokkaido | Kaderu２・７ | Single-Electron-Resolution Electrometer Based on Field-Effect Transistor Katsuhiko Nishiguchi, Charlie Koechlin, Yukinori Ono, Akira Fujiwara, Hiroshi Inokawa, Hiroshi Yamaguchi (NTT) ED2008-62 SDM2008-81 |
[more] | ED2008-62 SDM2008-81 pp.119-124 |
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