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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ICD, SDM | 2010-08-27 16:00 |
Hokkaido | Sapporo Center for Gender Equality | Random Drain Current Variation Caused by "Current-Onset Voltage" Variability in Scaled MOSFETs Tomoko Mizutani (Univ. of Tokyo), Takaaki Tsunomura (MIRAI-Selete), Anil Kumar (Univ. of Tokyo), Akio Nishida, Kiyoshi Takeuchi, Satoshi Inaba, Shiro Kamohara (MIRAI-Selete), Kazuo Terada (Hiroshima City Univ.), Tohru Mogami (MIRAI-Selete), Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete)  SDM2010-150 ICD2010-65 |
It is revealed that drain current variability is fluctuated by “current-onset voltage” as well as threshold voltage VTH ... [more] | SDM2010-150 ICD2010-65 pp.143-148 |
| ICD, ITE-IST | 2010-07-22 10:20 |
Osaka | Josho Gakuen Osaka Center | In-situ Evaluation of Vth and AC Gain of 90 nm CMOS Differential Pair Transistors Yoji Bando, Satoshi Takaya, Takashi Hasegawa (Kobe Univ.), Toru Ohkawa, Masaaki Souda, Toshiharu Takaramoto, Toshio Yamada, Shigetaka Kumashiro, Tohru Mogami (MIRAI-Selete), Makoto Nagata (Kobe Univ.) ICD2010-23 |
[more] | ICD2010-23 pp.11-14 |
| WIT | 2010-05-22 15:15 |
Niigata | Tokimate, Univ. of Niigata | Current Status and Future Tasks of Local IT Support System for Persons with Disabilities
-- Nagano Prefectural IT Support Center for Persons with Disabilities -- Satoshi Aoki (Miraijuku) WIT2010-16 |
Local IT support centers for persons with disabilities have a small number of staff members and volunteers as well as us... [more] | WIT2010-16 pp.83-85 |
| SDM | 2009-11-12 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
2009 SISPAD Review Katsuhiko Tanaka (MIRAI-Selete) SDM2009-136 |
2009 International Conference on Simulation of Semiconductor Processes and Devices (2009 SISPAD) was held on September 9... [more] | SDM2009-136 pp.7-11 |
| MVE | 2009-11-12 14:25 |
Osaka | Osaka Institute of Technology | Motion Feature Selection for Designing ElectroMyoGraphic User Interface EMGUI Mitsunobu Taniguchi, Yuichi Nakamura, Kazuaki Kondo, Yuichi Nakamura (Kyoto Univ.), Shigeru Sakurazawa, Masashi Toda (Kouritsu Hakodatemirai Univ.), Junichi Akita (Kanazawa Univ.) MVE2009-61 |
In this paper, we propose a motion feature selection for designing EMGUI, an ElectroMyoGraphic User Interface. In EMGUI,... [more] | MVE2009-61 pp.19-20 |
| SDM | 2009-11-13 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Random Fluctuations in Scaled MOS Devices Kiyoshi Takeuchi (MIRAI-Selete/NEC Corp.), Akio Nishida (MIRAI-Selete), Toshiro Hiramoto (MIRAI-Selete/Univ. of Tokyo.) SDM2009-147 |
[more] | SDM2009-147 pp.67-71 |
| SDM | 2009-11-13 15:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | A Discrete Surface Potential Model which Accurately Reflects Channel Doping Profile and its Application to Ultra-Fast Analysis of Random Dopant Fluctuation Hironori Sakamoto, Hiroshi Arimoto, Hiroo Masuda, Satoshi Funayama, Shigetaka Kumashiro (MIRAI-Selete) SDM2009-148 |
[more] | SDM2009-148 pp.73-78 |
| SDM | 2009-06-19 11:20 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Electrical Properties of Ge MIS Interface Defects Noriyuki Taoka, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota (MIRAI-NIRC), Shinichi Takagi (MIRAI-NIRC/Univ. of Tokyo) SDM2009-30 |
The response of majority and minority carriers with interface traps have been systematically investigated for Ge MIS int... [more] | SDM2009-30 pp.21-26 |
| SDM | 2009-06-19 12:40 |
Tokyo | An401・402 Inst. Indus. Sci., The Univ. of Tokyo | Thermal Stability of Ge MOS Devices
-- Influence of Ge monoxide [GeO(II)] on Ge oxygen [GeO(g)] desorption -- Yoshiki Kamata (MIRAI-TOSHIBA), Akira Takashima (TOSHIBA Corp), Tsutomu Tezuka (MIRAI-TOSHIBA) SDM2009-31 |
GeO(g) desorption temperature decreases with the increase in the ratio of GeO(II) in Ge oxide and is independent of the ... [more] | SDM2009-31 pp.27-31 |
| OPE | 2008-12-19 14:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
[Invited]Trend of On-Chip Optical Interconeect Development Keishi Ohashi (NEC / MIRAI-Selete) OPE2008-140 |
Increases in the data transmission rate intra-chip and between chips have been kept under the increase in processor perf... [more] | OPE2008-140 pp.23-24 |
| LQE, CPM, EMD, OPE | 2008-08-28 11:25 |
Miyagi | Touhoku Univ. | Optical Device Application of EO/MO Materials by Aerosol Deposition Masafumi Nakada (NEC Corp./MIRAI-Selete), Takanori Shimizu (MIRAI-Selete), Mizuki Iwanami (NEC Corp.), Keishi Ohashi (NEC Corp./MIRAI-Selete), Hiroki Tsuda, Jun Akedo (AIST) EMD2008-34 CPM2008-49 OPE2008-64 LQE2008-33 |
We develop functional oxide films with a large electro-optic (EO) effect for use in very small, low-power EO conversion ... [more] | EMD2008-34 CPM2008-49 OPE2008-64 LQE2008-33 pp.11-14 |
| ICD, SDM | 2008-07-17 14:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Special Talk]
Present Status and Future Trend of Characteristic Variations in Scaled CMOS Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete), Kiyoshi Takeuchi, Takaaki Tsunomura (/MIRAI-Selete), Arifin T.Putra (Univ. of Tokyo), Akio Nishida, Shiro Kamohara (/MIRAI-Selete) SDM2008-135 ICD2008-45 |
The variability is one of the most critical issues for further miniaturization of MOS transistors. Although the variabi... [more] | SDM2008-135 ICD2008-45 pp.41-46 |
| EA | 2008-06-27 12:40 |
Akita | Akita Prefectural University | Acoustic Guitar Playing and Listening System with Measured Plucking Information Ichiro Tokuhiro (KAIT), Yoshimitsu Takazawa (MiraiTechno), Kiyohiko Yamaya (Sonar Research) EA2008-30 |
The sound output from the audiovisual apparatus is inferior compared with the live performance. Information of music th... [more] | EA2008-30 pp.25-30 |
| EA | 2008-06-27 13:10 |
Akita | Akita Prefectural University | Consideration about the validity of ASIO(Audio Stream Input Output) Yoshimitsu Takazawa (Mirai Techno), kazuhiro Tokuhiro (KAIT) EA2008-31 |
In the Windows, the input/output of sound is usually performed by an audio driver to be called `MME'. However, it has be... [more] | EA2008-31 pp.31-36 |
| SDM | 2008-06-09 13:30 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | [Tutorial Lecture]
Current Status and Prospects of High Mobility Channel Technologies for High performance CMOS Shinichi Takagi (Univ. of Tokyo/MIRAI-AIST) SDM2008-42 |
Saturation of CMOS performance has been evident in the present 45 nm technology and beyond because of the a variety of l... [more] | SDM2008-42 pp.1-6 |
| SDM | 2008-06-10 10:55 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | The role of the high-k/SiO2 interface in the control of the threshold voltage for high-k MOS devices Kunihiko Iwamoto, Yuuichi Kamimuta (MIRAI-ASET), Yu Nunoshige (Shibaura Institute of Technology), Akito Hirano, Arito Ogawa, Yukimune Watanabe (MIRAI-ASET), Shinji Migita, Wataru Mizubayashi, Yukinori Morita (MIRAI-ASRC, AIST), Masashi Takahashi (MIRAI-ASET), Hiroyuki Ota (MIRAI-ASRC, AIST), Toshihide Nabatame (MIRAI-ASET), Akira Toriumi (The University of Tokyo) SDM2008-51 |
[more] | SDM2008-51 pp.53-58 |
| LQE | 2007-12-07 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
LSI on-chip optical interconnect technology Kenichi Nishi, Keichi Ohashi (MIRAI-Selete&NEC) LQE2007-118 |
On-chip optical interconnect technology is expected to be utilized for solving future problems in LSI's electrical globa... [more] | LQE2007-118 pp.27-32 |
| ED, SDM | 2007-06-25 13:00 |
Overseas | Commodore Hotel Gyeongju Chosun, Gyeongju, Korea | [Invited Talk]
Robust Design of Transistors: Present Status and Measures to Characteristic Variations Toshiro Hiramoto (Univ. Tokyo and MIRAI-Selet) |
[more] | |
| SDM | 2007-06-08 15:05 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | Characteristics of HfO2/Ge-nitride/Ge MIS structures Tatsuro Maeda, Yukinori Morita, Masayasu Nishizawa (AIST), Shinichi Takagi (AIST/Univ. of Tokyo) SDM2007-50 |
[more] | SDM2007-50 pp.101-106 |
| SDM, VLD | 2006-09-26 16:15 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | To be announced Masami Hane, Takeo Ikezawa, Michihito Kawada (NEC), Tatsuya Ezaki (Hiroshima Univ.), Toyoji Yamamoto (MIRAI-ASET) |
Simulation analysis of channel-orientation effects on strained silicon MOSFETs based on a full-band Monte Carlo method c... [more] | VLD2006-50 SDM2006-171 pp.65-69 |
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