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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, CPM, LQE 2021-11-25
14:35		 Online Online Photoluminescence study of high-purity GaN homoepitaxial layers grown by hydride vapor phase epitaxy
Hiroto Imashiro, Ryo Yamahida, Hironao Kanamori, Ryuichi Watanabe (KIT), Takeshi Kimura, Taichiro Konno, Hajime Fujikura (SCIOCS), Atsushi A. Yamaguchi (KIT) ED2021-22 CPM2021-56 LQE2021-34		 The fundamental material properties of GaN and its related materials have not been fully understood. One of the reasons ... [more] ED2021-22 CPM2021-56 LQE2021-34
pp.37-40
ED, CPM, LQE 2021-11-26
13:25		 Online Online Uniformity characterization of SiC, GaN, α-Ga₂O₃ Schottky contacts using scanning internal photoemission microscopy
Yuto Kawasumi (Univ. of Fukui), Fumimasa Horikiri, Noboru Fukuhara (SCIOCS Co.), Tomoyoshi Mishima (Hosei Univ.), Takashi Shinohe (FLOSFIA INC.), Kenji Shiojima (Univ. of Fukui) ED2021-29 CPM2021-63 LQE2021-41		 Uniformity characterization of Ni/SiC, Ni/GaN, and Cu/Ti/$alpha$-Ga2O3 Schottky contacts was performed by scanning inter... [more] ED2021-29 CPM2021-63 LQE2021-41
pp.67-70
ED, CPM, LQE 2021-11-26
16:00		 Online Online Fabrication of Recessed-gate AlGaN/GaN HEMTs using Low-damage Contactless Photo-Electrochemical Etching
Masachika Toguchi, Kazuki Miwa (Hokkaido Univ.), Fumimasa Horikiri, Noboru Fukuhara, Yoshinobu Narita, Osamu Ichikawa, Ryota Isono, Takeshi Tanaka (SCIOCS), Taketomo Sato (Hokkaido Univ.) ED2021-34 CPM2021-68 LQE2021-46		 (To be available after the conference date) [more] ED2021-34 CPM2021-68 LQE2021-46
pp.87-90
ED, MW 2020-01-31
11:45		 Tokyo Kikai-Shinko-Kaikan Bldg. Simple Photoelectrochemical Etching for Recess Gate GaN HEMT
Fumimasa Horikiri, Noboru Fukuhara (SCIOCS), Masachika Toguchi, Kazuki Miwa (Hokaido Univ.), Yoshinobu Narita, Osamu Ichikawa, Ryota Isono, Takeshi Tanaka (SCIOCS), Taketomo Sato (Hokaido Univ.) ED2019-98 MW2019-132		 Photoelectrochemical (PEC) etching is a promising technology for fabricating GaN devices with low damage. In the simple ... [more] ED2019-98 MW2019-132
pp.25-28
ED, CPM, SDM 2018-05-24
15:25		 Aichi Toyohashi Univ. of Tech. (VBL) The characterization of GaN homo-epitaxial layers grown on GaN substrates by using FT-IR
Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida (Sciocs) ED2018-18 CPM2018-5 SDM2018-13		 The film thickness of homo epitaxial layers on freestanding GaN substrate was characterized by using Fourier transform ... [more] ED2018-18 CPM2018-5 SDM2018-13
pp.19-22
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