| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2015-10-29 14:00 |
Miyagi | Niche, Tohoku Univ. | [Invited Talk]
Current situation and challenging for ion implantation technology Yoshiki Nakashima, Nariaki Hamamoto, Shigeki Sakai, Hiroshi Onoda (NIC)  SDM2015-71 |
[more] | SDM2015-71 pp.1-6 |
| SDM, EID | 2014-12-12 11:00 |
Kyoto | Kyoto University | Irradiation Effect of Carbon-Based Polyatomic Ions on Si Substrate Mitsuaki Takeuchi, Kyohei Hayashi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.), Tsutomu Nagayama, Koji Matsuda (Nissin Ion Equipment) EID2014-17 SDM2014-112 |
Irradiation damage on Si(100) substrates which were irradiated with C$_{n}$H$_{n}^{+}$($n$=3, 7, 14) and C$_{n}$H$_{2n+1... [more] | EID2014-17 SDM2014-112 pp.21-24 |
| CPM, ED, SDM | 2014-05-29 14:00 |
Aichi | P - GaN by Mg Ion Implantation for Power Device Applications Zheng Sun, Marc Olsson (Nagoya Univ.), Tsutomu Nagayama (Nissin Ion Equipment), Yoshio Honda, Hiroshi Amano (Nagoya Univ.) ED2014-40 CPM2014-23 SDM2014-38 |
We realized p-GaN by high temperature Mg ion implantation with pre-sputter(PS) technique. Due to the new PS technique an... [more] | ED2014-40 CPM2014-23 SDM2014-38 pp.109-112 |
|
| SDM | 2014-01-29 10:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
Heated Ion Implantation Technology for Highly Reliable Metal-gate/High-k CMOS SOI FinFETs Wataru Mizubayashi (AIST), Hiroshi Onoda, Yoshiki Nakashima (Nissin Ion Equipment), Yuki Ishikawa, Takashi Matsukawa, Kazuhiko Endo, Yongxun Liu, Shinichi Ouchi, Junichi Tsukada, Hiromi Yamauchi, Shinji Migita, Yukinori Morita, Hiroyuki Ota, Meishoku Masahara (AIST) SDM2013-138 |
The impact of heated ion implantation (I/I) technology on metal-gate (MG)/high-k (HK) CMOS SOI FinFET performance and re... [more] | SDM2013-138 pp.13-16 |
| ED | 2010-10-25 13:25 |
Kyoto | Surface state and electron emission property of silicon field emitter arrays treated by trifluoromethane plasma Yasuhito Gotoh, Keisuke Endo, Hiroshi Tsuji (Kyoto Univ.), Junzo Ishikawa (Chubu Univ.), Shigeki Sakai (Nissin Ion Equipment) ED2010-129 |
Surface state of the silicon substrate treated by trifluoromethane plasma was analyzed in order to clarify the origin of... [more] | ED2010-129 pp.7-10 |
|
| ED | 2008-08-05 09:50 |
Shizuoka | Sizuoka Univ. Hamamatsu Campus | Application of silicon field emitter arrays for space charge compensation of low energy ion beam Mitsuaki Takeuchi (Innovation Plaza Kyoto, JST), Yasuhito Gotoh, Hiroshi Tsuji (Kyoto Univ.), Shigeki Sakai (Nissin Ion Equipment), Tsunenobu Kimoto, Junzo Ishikawa (Kyoto Univ.) ED2008-119 |
We demonstrated a space charge compensation by using a surface-carbonized silicon field emitter array(Si:C-FEA). The Si:... [more] | ED2008-119 pp.49-52 |
| SDM | 2007-12-14 10:20 |
Nara | Nara Institute Science and Technology | Shallow Junction Formed by Rapid Heat Treatment using Semiconductor Laser Toshiyuki Sameshima (Tokyo A&T Univ.), Naoki Sano (Hightec Systems Co.), M.Naito (Nissin Ion Equipment Co. Ltd) SDM2007-223 |
[more] | SDM2007-223 pp.5-8 |
[Return to Top Page]