| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| SDM | 2008-06-10 10:30 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | Backside X-ray Photoelectron Spectroscopy of Ru/HfSiON Gate Stack
-- Origin of Change in Effective Work Function of Ru -- Taiki Mori, Akio Ohta, Hiromichi Yoshinaga, Seiichi Miyazaki (Hiroshima Univ.), Masaru Kadoshima, Yasuo Nara (Selete)  SDM2008-50 |
2.5nm-thick HfSiON layers were deposited on thermally-grown SiO2 in the thickness range of 1 to 6nm or 0.7nm-thick SiON ... [more] | SDM2008-50 pp.47-52 |
| SDM | 2008-06-10 11:20 |
Tokyo | An401・402, Inst. Indus. Sci., The Univ. of Tokyo | XPS Study of TiAlN/HfSiON Gate Stack
-- Reduction of Effective Work Function Change Induced by Al Diffusion -- Akio Ohta, Taiki Mori, Hiromichi Yoshinaga, Seiichi Miyazaki (Hiroshima Univ.), Masaru Kadoshima, Yasuo Nara (Selete) SDM2008-52 |
~30nm-thick TiAlN and TiN gate were deposited on HfSiON/SiO2/Si(100) stack structure and followed by anneal at 1000º... [more] | SDM2008-52 pp.59-64 |
| LQE | 2007-12-07 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Talk]
LSI on-chip optical interconnect technology Kenichi Nishi, Keichi Ohashi (MIRAI-Selete&NEC) LQE2007-118 |
On-chip optical interconnect technology is expected to be utilized for solving future problems in LSI's electrical globa... [more] | LQE2007-118 pp.27-32 |
| ICD, SDM | 2007-08-24 13:00 |
Hokkaido | Kitami Institute of Technology | [Special Invited Talk]
Towards Great Nanoelectronics Country, Japan Hisatsune Watanabe (Selete) SDM2007-162 ICD2007-90 |
[more] | SDM2007-162 ICD2007-90 p.117 |
| SDM | 2007-06-08 10:30 |
Hiroshima | Hiroshima Univ. ( Faculty Club) | The Effect of Nitrogen Addition into HfSiON on Threshold Voltage Shift Chihiro Tamura, Tatsuya Naito (Univ. of Tsukuba), Motoyuki Sato, Seiji Inumiya (Selete), Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba) SDM2007-42 |
The threshold voltage shift was analyzed for the FETs with HfSiOx or HfSiON films. It was found that the NBTI slope, B (... [more] | SDM2007-42 pp.59-64 |
| SDM | 2006-06-21 14:55 |
Hiroshima | Faculty Club, Hiroshima Univ. | Characterization of open volumes in high-k gate dielectrics by using monoenergetic positron beams Akira Uedono, T. Otsuka, K. Ito, K. Shiraishi, Kikuo Yamabe (Univ. of Tsukuba), Seiichi Miyazaki (Hiroshima Univ.), Naoto Umezawa, Toyohiro Chikyow (NIMS), Toshiyuki Ohdaira, R. Suzuki (AIST), Seiji Inumiya, Satoshi Kamiyama (Selete), Yasushi Akasaka (TEL), Yasuo Nara (Selete), Keisaku Yamada (Waseda Uni.) |
[more] | SDM2006-46 pp.25-30 |
| SDM | 2006-06-21 16:00 |
Hiroshima | Faculty Club, Hiroshima Univ. | Electric Properties on High-k Capacitors with Work-Function Tuned Metal Electrodes Kenji Ohmori (NIMS), Parhat Ahmet (TIT), Kenji Shiraishi (Univ. of Tsukuba), Heiji Watanabe (Osaka Univ.), Yasushi Akasaka (Selete), Kikuo Yamabe (Univ. of Tsukuba), Michiko Yoshitake (NIMS), K. S. Chang, M. L. Green (NIST), Yasuo Nara (Selete), Keisaku Yamada (Waseda Univ.), Toyohiro Chikyow (NIMS) |
[more] | SDM2006-48 pp.37-41 |
| SDM | 2006-06-22 13:10 |
Hiroshima | Faculty Club, Hiroshima Univ. | Interfacial reaction in HfO2/SiO2/Si(001) during O2 anneal observed by high-resolution RBS Zhao Ming, Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura (Kyoto Univ.), Masashi Uematsu (NTT BRL), Kazuyoshi Torii, Satoshi Kamiyama, Yasuo Nara (Selete), Keisaku Yamada (Waseda Univ.) |
[more] | SDM2006-59 pp.99-102 |
| SDM | 2006-06-22 14:40 |
Hiroshima | Faculty Club, Hiroshima Univ. | Electric characteristics of HfSiON gate dielectric film(tentative) Ryu Hasunuma, Tatsuya Naito (Univ. of Tsukuba), Seiji Inumiya (Selete), Kikuo Yamabe (Univ. of Tsukuba) |
[more] | SDM2006-62 pp.113-117 |
[Return to Top Page]