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 Results 1 - 4 of 4  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
VLD 2008-09-29
13:30		 Ishikawa   [Invited Talk] Phase-Adjustable Error Detection Flip-Flops with 2-Stage Hold Driven Optimization and Slack Based Grouping Scheme for Dynamic Voltage Scaling
Masanori Kurimoto, Hiroaki Suzuki (Renesas Technology), Rei Akiyama, Tadao Yamanaka, Haruyuki Okuma (Renesas Design), Hidehiro Takata, Hirofumi Shinohara (Renesas Technology) VLD2008-47		  [more] VLD2008-47
pp.1-6
ICD, SDM 2008-07-17
10:30		 Tokyo Kikai-Shinko-Kaikan Bldg. A 45 nm Low-Standby-Power Embedded SRAM with Improved Immunity Against Process and Temperature Variations
Makoto Yabuuchi, Koji Nii, Yasumasa Tsukamoto, Shigeki Ohbayashi, Susumu Imaoka (Renesas Tech.), Yoshinobu Yamagami, Satoshi Ishikura, Toshio Terano, Katsuji Satomi, Hironori Akamatsu (Matsushita Elec.), Hirofumi Shinohara (Renesas Tech.) SDM2008-131 ICD2008-41		 We develop 512 Kb SRAM module in 45 nm LSTP CMOS technology with the variation tolerant assist circuits against process ... [more] SDM2008-131 ICD2008-41
pp.17-22
ICD, ITE-IST 2007-07-27
11:10		 Hyogo   A detachable high-speed wireless interface for LSI logic monitoring using pulse-based inductive-coupling technique
Hiroki Ishikuro (Keio Univ.), Toshihiko Sugahara, Yoichi Takahata (Renesas Solutions Corp.), Shunichi Iwata (Renesas Technology Corp.), Yutaka Takikawa (Renesas Design Corp.), Tadahiro Kuroda (Keio Univ.) ICD2007-60		 A detachable high-speed wireless interface was developed for monitoring of logic operation of a Si-chip through LSI pack... [more] ICD2007-60
pp.135-140
ICD 2007-04-13
09:40		 Oita   [Invited Talk] A 65 nm Embedded SRAM with Wafer Level Burn-In Mode, Leak-Bit Redundancy and E-trim Fuse for Known Good Die
Shigeki Ohbayashi, Makoto Yabuuchi, Kazushi Kono (Renesas Technology), Yuji Oda (Shikino High-Tech), Susumu Imaoka (Renesas Design), Keiichi Usui (Daioh Electric), Toshiaki Yonezu, Takeshi Iwamoto, Koji Nii, Yasumasa Tsukamoto, Masashi Arakawa, Takahiro Uchida, Hiroshi Makino, Koichiro Ishibashi, Hirofumi Shinohara (Renesas Technology) ICD2007-11		 We propose a Wafer Level Burn-In (WLBI) mode, a leak-bit redundancy and a small, highly reliable Cu E-trim fuse repair s... [more] ICD2007-11
pp.59-64
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