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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, SDM | 2010-06-30 16:30 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | 50-Gbit/s MUX/DEMUX IC modules using feed-trough type metal-wall package technique Satoshi Tsunashima, Michihiro Hirata, Koichi Murata (NTT Corp.)  ED2010-72 SDM2010-73 |
A broadband metal-wall (MW) package that uses a feed-through RF interface has been developed for 50-Gbit/s multiplexer (... [more] | ED2010-72 SDM2010-73 pp.91-96 |
| OPE, LQE | 2010-06-25 14:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Composite Field MIC-PD for Low Bias and High Input Power Operation Toshihide Yoshimatsu, Yoshifumi Muramoto, Satoshi Kodama, Naoteru Shigekawa, Haruki Yokoyama (NTT Corp.), Tadao Ishibashi (NTT Electronics Corp.) OPE2010-16 LQE2010-18 |
Maximized Induced Current Photodiode (MIC-PD) has an optimized structure between a responsivity and a bandwidth by minim... [more] | OPE2010-16 LQE2010-18 pp.7-10 |
| OCS, NS, PN (Joint) |
2010-06-25 09:45 |
Akita | Akita University | Channel-allocation-adaptive WDM Signal Observation Based on Sequential Ultrafast Field Sampling Keiji Okamoto, Fumihiko Ito, Yohei Sakamaki, Toshikazu Hashimoto (NTT Corp.) OCS2010-19 |
This paper describes a novel measurement technology, based on sequential ultrafast field sampling incorporating digital ... [more] | OCS2010-19 pp.49-54 |
| CS, OCS (Joint) |
2010-01-28 11:45 |
Yamaguchi | Kaikyo Messe Shimonoseki | A burst-mode transimpedance amplifier for 1G/10G-EPON systems
-- Using quick, highly accurate automatic offset compensation technique -- Susumu Nishihara, Makoto Nakamura, Tsuyoshi Ito, Takeshi Kurosaki, Yusuke Ohtomo, Akira Okada (NTT Corp.) OCS2009-102 |
This paper describes a 10G burst-mode transimpedance amplifier (TIA) featuring fast gain switching and accurate automati... [more] | OCS2009-102 pp.13-17 |
| OPE, EMT, LQE, PN, IEE-EMT | 2010-01-28 16:25 |
Kyoto | 40-km SMF transmission for 100-Gbit/s Ethernet system based on 25-Gbit/s 1.3-um electroabsorption modulator integrated with DFB laser Takeshi Fujisawa, Masakazu Arai, Naoki Fujiwara, Wataru Kobayashi, Takashi Tadokoro, Ken Tsuzuki, Yuichi Akage, Ryuzo Iga, Takayuki Yamanaka, Fumiyoshi Kano (NTTPH Lab.) PN2009-45 OPE2009-183 LQE2009-165 |
We have developed 1.3-um electroabsorption modulator integrated with DFB laser for middle- and long-distance 100 Gbit/s ... [more] | PN2009-45 OPE2009-183 LQE2009-165 pp.57-60 |
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| OPE, EMT, LQE, PN, IEE-EMT | 2010-01-29 10:45 |
Kyoto | Fundamental research on dense integration of memory elements for optical random access memory (RAM) by using lens coupling with fiber-array Yuichiro Tahara, Hany Ayad Bastawrous, Haisong Jiang (Kyushu Univ.), Shinji Matsuo (NTT), Kiichi Hamamoto (Kyushu Univ.) PN2009-54 OPE2009-192 LQE2009-174 |
Optical coupling between fiber-array and memory element for optical random access memory (RAM) is important for future d... [more] | PN2009-54 OPE2009-192 LQE2009-174 pp.101-106 |
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| OPE, EMT, LQE, PN, IEE-EMT | 2010-01-29 11:10 |
Kyoto | Planar Lightwave Circuit Type Optical Performance Monitor Takayuki Mizuno, Takashi Goh, Takaharu Ohyama, Yasuaki Hashizume, Akimasa Kaneko (NTT Corp.) PN2009-55 OPE2009-193 LQE2009-175 |
Optical performance monitor that can monitor the optical power and optical signal-to-noise ratio (OSNR) is becoming an i... [more] | PN2009-55 OPE2009-193 LQE2009-175 pp.107-111 |
|
| CS, OCS (Joint) |
2010-01-29 14:55 |
Yamaguchi | Kaikyo Messe Shimonoseki | Highly-Efficient Spectrum-Sliced Elastic Optical Path Network (SLICE) with Per-Channel Variable Capacity up to 1 Tb/s Bartlomiej Kozicki, Hidehiko Takara, Yukio Tsukishima, Yoshiaki Sone, Toshihide Yoshimatsu, Takayuki Kobayashi, Kazushige Yonenaga, Masahiko Jinno (NTT) OCS2009-117 |
The experimental demonstration of a novel spectrum-sliced elastic optical path network (SLICE) is presented. The descrip... [more] | OCS2009-117 pp.99-104 |
| ED, MW | 2010-01-14 14:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Compressively Strained InAlN/AlGaN/GaN FETs with Regrown AlGaN Contact Layers Masanobu Hiroki, Narihiko Maeda, Naoteru Shigekawa (NTT Corp.) ED2009-187 MW2009-170 |
[more] | ED2009-187 MW2009-170 pp.71-76 |
| ED, MW | 2010-01-15 09:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg | A 32-GS/s 6-bit Double-Sampling DAC in InP HBT Technology Munehiko Nagatani, Hideyuki Nosaka, Shogo Yamanaka, Kimikazu Sano, Koichi Murata (NTT Corp.) ED2009-191 MW2009-174 |
We have developed an ultrahigh-speed 6-bit DAC with InP HBT Technology. To achieve ultrahigh-speed operation, we devised... [more] | ED2009-191 MW2009-174 pp.93-97 |
| ED, MW | 2010-01-15 10:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg | Pseudo Sinusoidal Generator with PVT Compensation Circuit using InP HBTs
-- For Linear Control of Vector-Sum Phase Shifter -- Hideyuki Nosaka, Munehiko Nagatani, Shogo Yamanaka, Kimikazu Sano, Koichi Murata (NTT Corp.) ED2009-192 MW2009-175 |
A pseudo-sinusoidal generator is needed to realize a voltage-controlled vector-sum phase shifter that has linear phase c... [more] | ED2009-192 MW2009-175 pp.99-103 |
| LQE | 2009-12-11 11:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Analysis of Stable Behavior in InAs/InP MQW DFB laser Using an OBIC Monitor Tatsuya Takeshita, Tomonari Sato, Manabu Mitsuhara, Yasuhiro Kondo, Hiromi Oohashi (NTT Corp.) LQE2009-143 |
We have realized reliable 2.3 $\micron$m wavelength InAs/InP MQW DFB lasers for trace gas monitoring applications. The e... [more] | LQE2009-143 pp.25-30 |
| ED | 2009-11-30 09:00 |
Osaka | Osaka Science & Technology Center | Resonant Tunneling Diode Terahertz (0.8-0.9THz) Oscillators with Spike Doping for Low Voltage Operation Kiyohito Sawada, Safumi Suzuki, Atsushi Teranishi, Masato Shiraishi, Masahiro Asada (Tokyo Tech.), Hiroki Sugiyama, Haruki Yokoyama (NTT) ED2009-166 |
We demonstrate fundamental oscillations at around 900 GHz with low bias voltages in resonant tunneling diodes (RTDs) hav... [more] | ED2009-166 pp.37-40 |
| R | 2009-11-20 14:45 |
Osaka | Emitter - metal - related degradation in InP-based HBTs and its suppression by introducing refractory metal Yoshino K. Fukai, Kenji Kurishima, Norihide Kashio, Minoru Ida, Shoji Yamahata, Takatomo Enoki (NTT Corp.) R2009-43 |
[more] | R2009-43 pp.11-16 |
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| OPE, LQE, OCS | 2009-10-22 09:00 |
Fukuoka | Integrated 2-bit memory elements based on bi-stability between different lateral modes using active multi-mode-interferometer (MMI) for random access memory (RAM) application Haisong Jiang, Hany Ayad Bastawrous, Yuichiro Tahara (Kyushu Univ.), Shinji Matsuo (NTT), Kiichi Hamamoto (Kyushu Univ.) OCS2009-41 OPE2009-107 LQE2009-66 |
To realize highly integrated optical memory elements for optical random access memory (RAM) application, common single&#... [more] | OCS2009-41 OPE2009-107 LQE2009-66 pp.1-5 |
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| OPE, LQE, OCS | 2009-10-22 14:25 |
Fukuoka | [Invited Talk]
Report on ECOC2009
-- Waveguide and passive devices -- Takashi Saida (NTT Corp.) OCS2009-52 OPE2009-118 LQE2009-77 |
[more] | OCS2009-52 OPE2009-118 LQE2009-77 pp.55-58 |
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| OPE, LQE, OCS | 2009-10-23 16:05 |
Fukuoka | Full C-Band 40-Gbit/s DPSK modulation using InP n-p-i-n Mach-Zehnder Modulator Monolithically Integrated with SOA Nobuhiro Kikuchi, Yasuo Shibata, Takako Yasui, Hiroyuki Ishii, Tomonari Sato, Yoshihiro Kawaguchi, Fumiyoshi Kano (NTT Corp.) OCS2009-78 OPE2009-144 LQE2009-103 |
[more] | OCS2009-78 OPE2009-144 LQE2009-103 pp.183-186 |
|
| CPM | 2009-09-25 14:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Multi Layered Waveguide-type Optical Memory using Two-Photon Absorption of Organoboron Polymer Shigetaka Katori, Takumi Ikenoue, Shizuo Fujita (Kyoto Univ.), Katsuhiko Hirabayashi, Hirohisa Kanbara (NTT PH Lab.), Takashi Kurihara (ISIT) CPM2009-85 |
Three dimensional (3D) recording using two-photon absorption (TPA) is one of the most promising candidate for achieving ... [more] | CPM2009-85 pp.13-17 |
| NS, OCS, PN (Joint) |
2009-06-25 16:00 |
Nagasaki | Nagasaki Museum of History and Culture (Nagasaki) | Dynamic switching characteristics of 1×4 InGaAsP/InP multimode interference waveguide switch Shinji Tomofuji (Osaka Univ.), Shinji Matsuo, Takaaki Kakitsuka (NTT), Ken-ichi Kitayama (Osaka Univ.) OCS2009-11 |
Multimode interference (MMI) waveguide switches show promise for switch in optical packet switching (OPS). In this work... [more] | OCS2009-11 pp.5-9 |
| SDM, ED | 2009-06-25 09:00 |
Overseas | Haeundae Grand Hotel, Busan, Korea | [Invited Talk]
InAlGaN/AlGaN/GaN Heterosturcures Field Effect Transistors with Flat Surface and High Electron Mobility Masanobu Hiroki, Narihiko Maeda, Takashi Kobayashi, Naoteru Shigekawa (NTT PH Labs.) ED2009-71 SDM2009-66 |
We report our recent development of an InAlN barrier layer for GaN-based FETs. We fabricated a novel structure consistin... [more] | ED2009-71 SDM2009-66 pp.93-98 |
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