Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2015-03-02 13:05 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
[Invited Talk]
Area dependence of thermal stability factor in perpendicular STT-MRAM analized by bi-directional data flipping model Koji Tsunoda, Masaki Aoki, Hideyuki Noshiro, Yoshihisa Iba, Chikako Yoshida, Yuuichi Yamazaki, Atsushi Takahashi, Akiyoshi Hatada, Masaaki Nakabayashi, Toshihiro Sugii (LEAP) SDM2014-166 |
We report a statistical analysis of the thermal stability factor (delta) for the top-pinned perpendicular magnetic tunne... [more] |
SDM2014-166 pp.23-28 |
SDM |
2015-03-02 13:35 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
[Invited Talk]
CNT Via Integration with Highly Dense and Selective CNT Growth Atsunobu Isobayashi, Makoto Wada, Ban Ito, Tatsuro Saito, Daisuke Nishide, T. Ishikura, Masayuki Katagiri, Yuichi Yamazaki, Takashi Matsumoto, Masayuki Kitamura, Masahito Watanabe, Naoshi Sakuma, Akihiro Kajita, Tadashi Sakai (LEAP) SDM2014-167 |
In this study, a highly selective carbon nanotube (CNT) via process was developed using a sacrificial spin-on carbon (SO... [more] |
SDM2014-167 pp.29-32 |
SDM |
2014-10-17 14:30 |
Miyagi |
Niche, Tohoku Univ. |
[Invited Talk]
Back-Bias Control technique for Suppression of Die-to-Die Delay Variability of SOTB MOS Circuits at Ultralow-Voltage (0.4 V) Operation Hideki Makiyama, Yoshiki Yamamoto, Hidekazu Oda, Shiro Kamohara, Nobuyuki Sugii, Yasuo Yamaguchi (LEAP), Koichiro Ishibashi (Univ. of Electro-Communications), Tomoko Mizutani, Toshiro Hiramoto (Univ. of Tokyo) SDM2014-94 |
Small-variability transistors such as silicon on thin buried oxide (SOTB) are effective for reducing the operation volta... [more] |
SDM2014-94 pp.61-68 |
ICD, SDM |
2014-08-04 13:55 |
Hokkaido |
Hokkaido Univ., Multimedia Education Bldg. |
[Invited Talk]
STT-MRAM Development for Embedded Cache Memory Toshihiro Sugii, Yoshihisa Iba, Masaki Aoki, Hideyuki Noshiro, Koji Tsunoda, Akiyoshi Hatada, Masaaki Nakabayashi, Yuuichi Yamazaki, Atsushi Takahashi, Chikako Yoshida (LEAP) SDM2014-68 ICD2014-37 |
We report the current status of our development of spin-transfer torque magnetic RAMs (STT-MRAMs) and their integration ... [more] |
SDM2014-68 ICD2014-37 pp.35-38 |
ICD, SDM |
2014-08-05 09:50 |
Hokkaido |
Hokkaido Univ., Multimedia Education Bldg. |
Statistical Analysis of Minimum Operation Voltage (Vmin) in Fully Depleted Silicon-on-Thin-BOX (SOTB) SRAM Cells Tomoko Mizutani (Univ. of Tokyo), Yoshiki Yamamoto, Hideki Makiyama, Tomohiro Yamashita, Hidekazu Oda, Shiro Kamohara, Nobuyuki Sugii (LEAP), Toshiro Hiramoto (Univ. of Tokyo) SDM2014-72 ICD2014-41 |
The minimum operation voltage (Vmin) of fully depleted (FD) silicon-on-thin-BOX (SOTB) SRAM cells are measured and stati... [more] |
SDM2014-72 ICD2014-41 pp.55-58 |
ICD |
2014-04-18 09:55 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Lecture]
Ultralow-Voltage Operation of Silicon-on-Thin-BOX (SOTB) 2Mbit SRAM Down to 0.37 V Utilizing Adaptive Back Bias Yoshiki Yamamoto, Hideki Makiyama, Tomohiro Yamashita, Hidekazu Oda, Shiro Kamohara, Nobuyuki Sugii, Yasuo Yamaguchi (LEAP), Tomoko Mizutani, Toshiro Hiramoto (UTokyo) ICD2014-11 |
We demonstrated record 0.37V minimum operation voltage (VMIN) of 2Mb Silicon-on-Thin-Buried-oxide (SOTB) 6T-SRAM. Thanks... [more] |
ICD2014-11 pp.53-57 |
SDM |
2014-01-29 14:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Suppression of Die-to-Die Delay Variability of Silicon on Thin Buried Oxide (SOTB) CMOS Circuits by Balanced P/N Drivability Control with Back-Bias for Ultralow-Voltage (0.4 V) Operation Hideki Makiyama, Yoshiki Yamamoto, Hirofumi Shinohara, Toshiaki Iwamatsu, Hidekazu Oda, Nobuyuki Sugii (LEAP), Koichiro Ishibashi (Univ. of Electro- Comm.), Tomoko Mizutani, Toshiro Hiramoto (Univ. of Tokyo), Yasuo Yamaguchi (LEAP) SDM2013-143 |
Small-variability transistors such as silicon on thin buried oxide (SOTB) are effective for reducing the operation volta... [more] |
SDM2013-143 pp.35-38 |
ICD |
2014-01-28 15:00 |
Kyoto |
Kyoto Univ. Tokeidai Kinenkan |
[Poster Presentation]
STT-MRAM Architecture for Improving Throughput Haruki Mori, Koji Yanagida, Yohei Umeki, Shusuke Yoshimoto, Shintaro Izumi, Masahiko Yoshimoto, Hiroshi Kawaguchi (Kobe Univ.), Koji Tsunoda, Toshihiro Sugii (LEAP) ICD2013-110 |
STT-MRAM (Spin Torque Transfer Magnetic Random Access Memory) attracts an attention as the substitute memory of SRAM. Th... [more] |
ICD2013-110 p.27 |
SDM, ICD |
2013-08-02 09:25 |
Ishikawa |
Kanazawa University |
Reduced Cell Current Variability in Fully Depleted Silicon-on-Thin-BOX (SOTB) SRAM Cells at Supply Voltage of 0.4V Tomoko Mizutani (Univ. of Tokyo), Yoshiki Yamamoto, Hideki Makiyama, Hirofumi Shinohara, Toshiaki Iwamatsu, Hidekazu Oda, Nobuyuki Sugii (LEAP), Toshiro Hiramoto (Univ. of Tokyo) SDM2013-75 ICD2013-57 |
Cell current (ICELL) variability in 6T-SRAM composed of silicon-on-thin-BOX (SOTB) MOSFETs by 65nm technology is measure... [more] |
SDM2013-75 ICD2013-57 pp.47-52 |
ICD |
2013-04-11 09:00 |
Ibaraki |
Advanced Industrial Science and Technology (AIST) |
[Invited Talk]
A Low Power Phase Change Memory Using Low Thermal Conductive Material with Nano-Crystalline Structure Takahiro Morikawa, Ken'ichi Akita, Takasumi Ohyanagi, Masahito Kitamura, Masaharu Kinoshita, Mitsuharu Tai, Norikatsu Takaura (LEAP) ICD2013-1 |
[more] |
ICD2013-1 pp.1-4 |
ICD |
2013-04-11 09:50 |
Ibaraki |
Advanced Industrial Science and Technology (AIST) |
[Invited Talk]
A Novel MTJ for STT-MRAM with a Dummy Free Layer and Dual Tunnel Junctions Koji Tsunoda, Hideyuki Noshiro, Chikako Yoshida, Yuuichi Yamazaki, Atsushi Takahashi, Yoshihisa Iba, Akiyoshi Hatada, Masaaki Nakabayashi, Takashi Takenaga, Masaki Aoki, Toshihiro Sugii (LEAP) ICD2013-2 |
A novel magnetic tunnel junction (MTJ) for embedded memory applications such as spin transfer torque magneto-resistive r... [more] |
ICD2013-2 pp.5-10 |
ICD |
2013-04-12 08:30 |
Ibaraki |
Advanced Industrial Science and Technology (AIST) |
[Invited Talk]
Complementary atom-switch based programmable cell array and its demostraion of logic mapping synthesized from RTL code Makoto Miyamura, Munehiro Tada, Toshitsugu Sakamoto, Naoki Banno, Koichiro Okamoto, Noriyuki Iguchi, Hiromitsu Hada (LEAP) ICD2013-12 |
Reconfigurable nonvolatile programmable-logic using complementary atom switch (CAS) is successfully demonstrated on a 65... [more] |
ICD2013-12 pp.55-59 |
ICD |
2012-12-17 13:30 |
Tokyo |
Tokyo Tech Front |
[Invited Talk]
High-performance STT-MRAM and Its Integration for Embedded Application Toshihiro Sugii, Yoshihisa Iba, Masaki Aoki, Hideyuki Noshiro, Koji Tsunoda, Akiyoshi Hatada, Masaaki Nakabayashi, Yuuichi Yamazaki, Atsushi Takahashi, Chikako Yoshida (LESP) ICD2012-90 |
High-performance spin transfer torque MRAM (STT-MRAM) for embedded cache memories was developed, utilizing a top-pinned ... [more] |
ICD2012-90 pp.17-20 |
ICD, SDM |
2012-08-02 13:00 |
Hokkaido |
Sapporo Center for Gender Equality, Sapporo, Hokkaido |
[Invited Lecture]
Silicon on Thin Buried Oxide (SOTB) Technology for Ultralow-Power (ULP) Applications Nobuyuki Sugii, Toshiaki Iwamatsu, Yoshiki Yamamoto, Hideki Makiyama, Takaaki Tsunomura, Hirofumi Shinohara, Hideki Aono, Hidekazu Oda, Shiro Kamohara, Yasuo Yamaguchi (LEAP/Renesas), Tomoko Mizutani, Toshiro Hiramoto (IIS, The University of Tokyo) SDM2012-68 ICD2012-36 |
Needs for low-power CMOS devices are still increasing. Ultralow-voltage-operation (ULV) CMOS with maximum power efficien... [more] |
SDM2012-68 ICD2012-36 pp.29-32 |
ICD, SDM |
2012-08-02 13:25 |
Hokkaido |
Sapporo Center for Gender Equality, Sapporo, Hokkaido |
Reduced Drain Current Variability in Fully Depleted Silicon-on-Thin-BOX (SOTB) MOSFETs Tomoko Mizutani (Univ. of Tokyo), Yoshiki Yamamoto, Hideki Makiyama, Takaaki Tsunomura, Toshiaki Iwamatsu, Hidekazu Oda, Nobuyuki Sugii (LEAP), Toshiro Hiramoto (Univ. of Tokyo) SDM2012-69 ICD2012-37 |
Drain current variability in silicon-on-thin-BOX (SOTB) MOSFETs by 65nm technology is analyzed and compared with convent... [more] |
SDM2012-69 ICD2012-37 pp.33-36 |
ICD, SDM |
2012-08-02 15:15 |
Hokkaido |
Sapporo Center for Gender Equality, Sapporo, Hokkaido |
[Invited Talk]
STT-MRAM Development and Its Integration with BEOL Process for Embedded Applications Toshihiro Sugii, Yoshihisa Iba, Masaki Aoki, Hideyuki Noshiro, Koji Tsunoda, Akiyoshi Hatada, Masaaki Nakabayashi, Yuuichi Yamazaki, Atsushi Takahashi, Chikako Yoshida (LEAP) SDM2012-73 ICD2012-41 |
[more] |
SDM2012-73 ICD2012-41 pp.55-58 |
ICD, SDM |
2012-08-03 09:25 |
Hokkaido |
Sapporo Center for Gender Equality, Sapporo, Hokkaido |
[Invited Talk]
Nanocarbon Interconnects
-- Aiming to replace ultra-fine metal interconnects -- Akihiro Kajita, Makoto Wada, Tatsuro Saito, Masayuki Kitamura, Yuichi Yamazaki, Masayuki Katagiri, Ban Ito, Daisuke Nishide, Takashi Matsumoto, Atsunobu Isobayashi, Mariko Suzuki, Atsuko Sakata, Masahito Watanabe, Naoshi Sakuma, Tadashi Sakai (LEAP) SDM2012-78 ICD2012-46 |
The width of interconnects has been shrinking toward 10nm in accordance with LSI devices shrinkage. The resistivity of s... [more] |
SDM2012-78 ICD2012-46 pp.83-87 |
SDM, ED (Workshop) |
2012-06-29 09:45 |
Okinawa |
Okinawa Seinen-kaikan |
[Invited Talk]
Silicon on Thin Buried Oxide (SOTB) Technology for Ultralow-Power (ULP) Applications Nobuyuki Sugii, Toshiaki Iwamatsu, Yoshiki Yamamoto, Hideki Makiyama, Takaaki Tsunomura, Hirofumi Shinohara, Hideki Aono, Hidekazu Oda, Shiro Kamohara, Yasuo Yamaguchi (LEAP/Renesas), Tomoko Mizutani, Toshiro Hiramoto (IIS, Univ. of Tokyo) |
Needs for low-power CMOS devices are still increasing. Ultralow-voltage-operation CMOS with maximum power efficiency can... [more] |
|
SDM |
2012-03-05 10:05 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Keynote Address]
Development of Ultra Low Voltage Devices utilizing BEOL Process Shin'ichiro Kimura (LEAP) SDM2011-176 |
Resistive-change non-volatile devices, in which variable resistance materials are embedded during Back-end of Line proce... [more] |
SDM2011-176 pp.1-5 |
ICD |
2011-04-18 15:20 |
Hyogo |
Kobe University Takigawa Memorial Hall |
[Invited Talk]
Trend in Phase Change Memory and activity in TIA Norikatsu Takaura (LEAP) ICD2011-6 |
This paper reports on trend in phase change memory (PCM) and research activity in Tsukuba Innovation Arena (TIA) . We di... [more] |
ICD2011-6 pp.33-36 |
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