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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
IA |
2020-10-01 15:35 |
Online |
Online |
[Poster Presentation]
Research and development of Personal Data Store (PDS) with access control for advanced PLR of running data Toyokazu Akiyama (Kyoto Sangyo Univ.), Yukiko Kawai (Kyoto Sangyo Univ./Osaka Univ.), Takumi Kiriu, Shinsuke, Nakajima (Kyoto Sangyo Univ.), Panote Siriaraya (Kyoto Institute of Tech.), Shinji Shimojo (Osaka Univ.) IA2020-9 |
[more] |
IA2020-9 p.29 |
VLD, DC, CPSY, RECONF, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC (Joint) [detail] |
2019-11-14 09:15 |
Ehime |
Ehime Prefecture Gender Equality Center |
NBTI Model Replicating AC Stress/Recovery from a Single-shot Long-term DC Measurement Takumi Hosaka (Saitama Univ.), Shinichi Nishizawa (Fukuoka Univ.), RYO Kishida (Tokyo Univ. of Science), Takashi Matsumoto (The Univ. of Tokyo), Kazutoshi Kobayashi (Kyoto Institute of Tech.) VLD2019-35 DC2019-59 |
In this paper, simple and compact Negative Bias Temperature Instability (NBTI) model is proposed. The model is based on ... [more] |
VLD2019-35 DC2019-59 pp.57-62 |
IN |
2018-06-14 15:25 |
Toyama |
Toyama Prefecture Education and Culture Center |
Information Theory Based Measurement Measuring Diversity of Link Weight for Mitigate Catastrophic Forgetting in Neural Network Learning LOD Lu Chen (Kyoto Institute of Tech.), Masayuki Murata (Osaka Univ.) IN2018-9 |
[more] |
IN2018-9 pp.27-32 |
SDM |
2011-11-11 15:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Gate Voltage Dependence of Channel Length Modulation Coefficient for Nanoscale MOSFETs Akira Hiroki, Jong Chul Yoon (Kyoto Institute of Tech.) SDM2011-128 |
In modeling the drain current for nanoscale MOSFETs, the channel length modulation coefficient $\lambda$, which characte... [more] |
SDM2011-128 pp.75-80 |
SDM |
2011-11-11 15:45 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Higher-order Effects of Source and Drain Parasitic Resistances for Nanoscale MOSFETs Jong Chul Yoon, Akira Hiroki (Kyoto Institute of Tech.) SDM2011-129 |
Higher-order effects of source and drain parasitic resistances have been investigated for nanoscale MOSFETs. We have der... [more] |
SDM2011-129 pp.81-85 |
KBSE, SS |
2011-07-29 14:30 |
Hokkaido |
Hokkaido Information University |
Identifying systematic changes of Java source code structure Hideaki Hata (Osaka Univ.), Osamu Mizuno (Kyoto Institute of Tech.), Tohru Kikuno (Osaka Univ.) SS2011-18 KBSE2011-15 |
Structure changes of source code including refactoring are inevitable activities in software development and maintenance... [more] |
SS2011-18 KBSE2011-15 pp.31-36 |
SS |
2010-12-14 14:40 |
Gunma |
Ikaho-Onsen Hotel Tenbo |
An Empirical Study on Relationship between Change History of Method Comments and Method Bugs Hideaki Hata (Osaka Univ.), Osamu Mizuno (Kyoto Institute of Tech.), Tohru Kikuno (Osaka Univ.) SS2010-41 |
Though comment statements are expected to help developers and users to
understand source code, improper comment stateme... [more] |
SS2010-41 pp.13-18 |
VLD |
2010-03-10 15:25 |
Okinawa |
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Generation Mechanism of SEU and MCU Caused by Parasitic Lateral Bipolar Transitstors Chikara Hamanaka (Kyoto Institute of Tech.), Jun Furuta, Hiroaki Makino (Kyoto Univ.), Kazutoshi Kobayashi (Kyoto Institute of Tech.), Hidetoshi Onodera (Kyoto Univ./JST, CREST) VLD2009-103 |
Tolerance for soft-error decreases as integration advances. SEU(Single Event Upset), flipping one bit
and MCU(Multi-Cel... [more] |
VLD2009-103 pp.25-30 |
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