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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 8 of 8  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
IA 2020-10-01
15:35
Online Online [Poster Presentation] Research and development of Personal Data Store (PDS) with access control for advanced PLR of running data
Toyokazu Akiyama (Kyoto Sangyo Univ.), Yukiko Kawai (Kyoto Sangyo Univ./Osaka Univ.), Takumi Kiriu, Shinsuke, Nakajima (Kyoto Sangyo Univ.), Panote Siriaraya (Kyoto Institute of Tech.), Shinji Shimojo (Osaka Univ.) IA2020-9
 [more] IA2020-9
p.29
VLD, DC, CPSY, RECONF, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC
(Joint) [detail]
2019-11-14
09:15
Ehime Ehime Prefecture Gender Equality Center NBTI Model Replicating AC Stress/Recovery from a Single-shot Long-term DC Measurement
Takumi Hosaka (Saitama Univ.), Shinichi Nishizawa (Fukuoka Univ.), RYO Kishida (Tokyo Univ. of Science), Takashi Matsumoto (The Univ. of Tokyo), Kazutoshi Kobayashi (Kyoto Institute of Tech.) VLD2019-35 DC2019-59
In this paper, simple and compact Negative Bias Temperature Instability (NBTI) model is proposed. The model is based on ... [more] VLD2019-35 DC2019-59
pp.57-62
IN 2018-06-14
15:25
Toyama Toyama Prefecture Education and Culture Center Information Theory Based Measurement Measuring Diversity of Link Weight for Mitigate Catastrophic Forgetting in Neural Network Learning LOD
Lu Chen (Kyoto Institute of Tech.), Masayuki Murata (Osaka Univ.) IN2018-9
 [more] IN2018-9
pp.27-32
SDM 2011-11-11
15:20
Tokyo Kikai-Shinko-Kaikan Bldg. Gate Voltage Dependence of Channel Length Modulation Coefficient for Nanoscale MOSFETs
Akira Hiroki, Jong Chul Yoon (Kyoto Institute of Tech.) SDM2011-128
In modeling the drain current for nanoscale MOSFETs, the channel length modulation coefficient $\lambda$, which characte... [more] SDM2011-128
pp.75-80
SDM 2011-11-11
15:45
Tokyo Kikai-Shinko-Kaikan Bldg. Higher-order Effects of Source and Drain Parasitic Resistances for Nanoscale MOSFETs
Jong Chul Yoon, Akira Hiroki (Kyoto Institute of Tech.) SDM2011-129
Higher-order effects of source and drain parasitic resistances have been investigated for nanoscale MOSFETs. We have der... [more] SDM2011-129
pp.81-85
KBSE, SS 2011-07-29
14:30
Hokkaido Hokkaido Information University Identifying systematic changes of Java source code structure
Hideaki Hata (Osaka Univ.), Osamu Mizuno (Kyoto Institute of Tech.), Tohru Kikuno (Osaka Univ.) SS2011-18 KBSE2011-15
Structure changes of source code including refactoring are inevitable activities in software development and maintenance... [more] SS2011-18 KBSE2011-15
pp.31-36
SS 2010-12-14
14:40
Gunma Ikaho-Onsen Hotel Tenbo An Empirical Study on Relationship between Change History of Method Comments and Method Bugs
Hideaki Hata (Osaka Univ.), Osamu Mizuno (Kyoto Institute of Tech.), Tohru Kikuno (Osaka Univ.) SS2010-41
Though comment statements are expected to help developers and users to
understand source code, improper comment stateme... [more]
SS2010-41
pp.13-18
VLD 2010-03-10
15:25
Okinawa   Generation Mechanism of SEU and MCU Caused by Parasitic Lateral Bipolar Transitstors
Chikara Hamanaka (Kyoto Institute of Tech.), Jun Furuta, Hiroaki Makino (Kyoto Univ.), Kazutoshi Kobayashi (Kyoto Institute of Tech.), Hidetoshi Onodera (Kyoto Univ./JST, CREST) VLD2009-103
Tolerance for soft-error decreases as integration advances. SEU(Single Event Upset), flipping one bit
and MCU(Multi-Cel... [more]
VLD2009-103
pp.25-30
 Results 1 - 8 of 8  /   
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