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Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, ED, CPM 2014-11-27
14:30		 Osaka   Two-Dimensional Strain Mapping of GaN Templates Fabricated by Nano-Channel FIELO Method Using Nanoimprint Lithography
Masanori Nambu, Atsushi Yamaguchi (Kanazawa Inst. of Tech.), Hiroki Goto, Haruo Sunakawa, Toshiharu Matsueda (Furukawa Co. Ltd.), Akiko Okada (Waseda Univ.), Hidetoshi Shinohara, Hiroshi Goto (Toshiba Machine Co. Ltd.), Jun Mizuno (Waseda Univ.), Akira Usui (Furukawa Co. Ltd.) ED2014-80 CPM2014-137 LQE2014-108		 The efficiency droop phenomenon is a big problem for high-brightness white LEDs. It has been pointed out that the proble... [more] ED2014-80 CPM2014-137 LQE2014-108
pp.33-38
CPM, LQE, ED 2010-11-12
10:50		 Osaka   Vertical GaN Diode on GaN Free-Standing Substrate
Shuichi Yagi, Shoko Hirata, Yasunobu Sumida, Masahiro Bessho, Hiroji Kawai (POWDEC), Toshiharu Matsueda, Akira Usui (Furukawa Co., Ltd.) ED2010-156 CPM2010-122 LQE2010-112		 We report the fabrication of schottky barrier diode (SBD) on GaN free-standing substrate. SBDs showed good DC operating... [more] ED2010-156 CPM2010-122 LQE2010-112
pp.63-66
ED, LQE, CPM 2009-11-19
09:25		 Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) HVPE growth of {11-22} GaN Crystals on m-plane Sapphire Substrates
Hitoshi Sasaki, Hiroki Goto, Akira Usui (Furukawa Co., Ltd.) ED2009-129 CPM2009-103 LQE2009-108		 {11-22} semi-polar plane GaN crystal layers are grown on sapphire substrates using HVPE technique. MOCVD-grown GaN / HT-... [more] ED2009-129 CPM2009-103 LQE2009-108
pp.5-8
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