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Technical Committee on Electron Device (ED) [schedule] [select]
Chair Tetsu Kachi (Toyota Central R&D Labs.)
Vice Chair Naoki Hara (Fujitsu Labs.)
Secretary Michihiko Suhara (Tokyo Metropolitan Univ.), Tetsuzo Ueda (Panasonic)
Assistant Seiya Kasai (Hokkaido Univ.), Koji Matsunaga (NEC)

Technical Committee on Component Parts and Materials (CPM) [schedule] [select]
Chair Yasushi Takemura (Yokohama National Univ.)
Vice Chair Yasushi Takano (Shizuoka Univ.)
Secretary Koji Enbutsu (NTT), Katsuya Abe (Shinshu Univ.)
Assistant Junichi Kodate (NTT), Tomomasa Sato (Kanagawa Univ.)

Technical Committee on Lasers and Quantum Electronics (LQE) [schedule] [select]
Chair Hiroyuki Tsuda (Keio Univ.)
Vice Chair Shinji Matsuo (NTT)
Secretary Kazunori Shinoda (Hitachi), Yu Tanaka (Fujitsu Labs.)

Conference Date Thu, Nov 29, 2012 10:00 - 16:40
Fri, Nov 30, 2012 09:30 - 17:40
Topics Nitride and Compound Semiconductor Devices 
Conference Place Osaka City University Media Center 
Address 3-3-138 Sugimoto-cho, Sumiyoshi-ku, Osaka-shi, 558-8585 Osaka, Japan
Transportation Guide http://www.osaka-cu.ac.jp/en/about/access
Contact
Person
Prof. Naoteru Shigekawa
+81-6-6605-2676
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Thu, Nov 29 AM 
10:00 - 16:40
(1) 10:00-10:25 Electrical Properties of Si-Based Heterojunctions by Surface-Activated Bonding ED2012-65 CPM2012-122 LQE2012-93 Jianbo Liang, Naoteru Shigekawa (Osaka City Univ.), Eiji Higurashi (Univ. Tokyo)
(2) 10:25-10:50 Layered boron nitride as a release layer for mechanical transfer of GaN-based devices ED2012-66 CPM2012-123 LQE2012-94 Yasuyuki Kobayashi, Kazuhide Kumakura, Tetsuya Akasaka, Hideki Yamamoto, Toshiki Makimoto (NTT)
  10:50-11:05 Break ( 15 min. )
(3) 11:05-11:30 Applicationo of III-V nitride films to photovoltaic device ED2012-67 CPM2012-124 LQE2012-95 Masatomo Sumiya, Liwen Sang, Mickael Lozac'h (NIMS)
(4) 11:30-11:55 Estimation of Surface Fermi level differences in surface-modified GaN crystals ED2012-68 CPM2012-125 LQE2012-96 Yohei Sugiura, Ryosuke Amiya, Daiki Tajimi (Kogakuin Univ.), Takeyoshi Onuma (TNCT), Tomohiro Yamaguchi, Tohru Honda (Kogakuin Univ.)
(5) 11:55-12:20 High growth rate AlN and AlGaN on large diameter Si substrate(6inch & 8inch) ED2012-69 CPM2012-126 LQE2012-97 Hiroki Tokunaga, Akinori Ubukata, Yoshiki Yano, Yuya Yamaoka, Akira Yamaguchi, Toshiya Tabuchi (TNSC), Kou Matumoto (TNEMC)
  12:20-13:30 Lunch Break ( 70 min. )
(6) 13:30-13:55 Anoralous current-voltage behavior in n-i-n type diode with GaN/AlGaN/GaN junction ED2012-70 CPM2012-127 LQE2012-98 Noriyuki Watanabe, Haruki Yokoyama (NTT), Naoteru Shigekawa (Osaka City Univ.)
(7) 13:55-14:20 Pt/β-Ga2O3 Schottky Barrier Diodes Using Single-Crystal β-Ga2O3 Substrates ED2012-71 CPM2012-128 LQE2012-99 Kohei Sasaki (Tamura Corp./NICT), Masataka Higashiwaki (NICT/JST), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co.), Shigenobu Yamakoshi (Tamura Corp.)
(8) 14:20-14:45 Evaluation of transient current of GaN HEMTs on Si under light ED2012-72 CPM2012-129 LQE2012-100 Takuya Joka, Akio Wakejima, Takashi Egawa (NIT)
(9) 14:45-15:10 Electrical characteristics of MIS-diodes with Al2O3 deposited by ALD on GaN ED2012-73 CPM2012-130 LQE2012-101 Yasuhiro Iwata, Toshiharu Kubo, Takashi Egawa (NITech)
  15:10-15:25 Break ( 15 min. )
(10) 15:25-15:50 Effects of process conditions on AlGaN/GaN hetero-MOS structures ED2012-74 CPM2012-131 LQE2012-102 Yujin Hori, Zenji Yatabe, Wan-Cheng Ma, Tamotsu Hashizume (Hokkaido Univ.)
(11) 15:50-16:15 Reduction in Threshold Voltage Shift of Insulated-gate GaN-HEMT Using ALD-Al2O3 Films ED2012-75 CPM2012-132 LQE2012-103 Shiro Ozaki, Toshihiro Ohki, Masahito Kanamura, Tadahiro Imada, Norikazu Nakamura, Naoya Okamoto, Toyoo Miyajima, Toshihide Kikkawa (Fujitsu Laboratories Ltd.)
(12) 16:15-16:40 Effect of Passivation on Drain Current Dispersion for AlGaN/GaN HEMTs ED2012-76 CPM2012-133 LQE2012-104 Md. Tanvir Hasan, Hirokuni Tokuda, Masaaki Kuzuhara (Univ. of Fukui)
Fri, Nov 30 AM 
09:30 - 17:40
(13) 09:30-09:55 Selective MOVPE growth on nonpolar GaN substrates ED2012-77 CPM2012-134 LQE2012-105 Daiki Jinno, Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yuuki Enatsu, Satoru Nagao (Mitsubishi Chemical Corp.)
(14) 09:55-10:20 RF-MBE Growth of InGaN-based quantum nanostructures using DERI ED2012-78 CPM2012-135 LQE2012-106 Tsutomu Araki, Nao Uematsu, Junichi Sakaguchi, Ke Wang (Ritsumeikan Univ.), Tomohiro Yamaguchi (Kogakuin Univ.), Euijoon Yoon (Seoul National Univ.), Yasushi Nanishi (Ritsumeikan Univ.)
(15) 10:20-10:45 Nitride semiconductor np-LEDs for improvement of efficiency droop ED2012-79 CPM2012-136 LQE2012-107 Takatoshi Morita, Mitsuru Kaga, Yuka Kuwano, Kenjo Matsui, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ. Nagoya Univ.)
  10:45-11:00 Break ( 15 min. )
(16) 11:00-11:25 Fabrication of red light emitting diode with GaN:Eu,Mg active layer ED2012-80 CPM2012-137 LQE2012-108 Tatsuki Otani, Hiroto Sekiguchi (Toyohashi Univ. Tech), Yasufumi Takagi (Hamamatsu Photonics K.K.), Hiroshi Okada, Akihiro Wakahara (Toyohashi Univ. Tech)
(17) 11:25-11:50 Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates ED2012-81 CPM2012-138 LQE2012-109 Yoon Seok Kim (Kyout Univ.), Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Takashi Miyoshi, Shin-ichi Nagahama (Nichia)
(18) 11:50-12:15 Fabrication of moth-eye patterned sapphire substrate (MPSS) and its application to LEDs ED2012-82 CPM2012-139 LQE2012-110 Takayoshi Tsuchiya, Shinya Umeda, Mihoko Sowa (Meijo Univ.), Toshiyuki Kondo, Tsukasa Kitano, Midori Mori, Atsushi Suzuki, Koichi Naniwae, Hitoshi Sekine (ELSEED), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.)
  12:15-13:15 Lunch Break ( 60 min. )
(19) 13:15-13:40 Mg acceptor activation inp-GaN of the structure with n-GaN surface ED2012-83 CPM2012-140 LQE2012-111 Yuka Kuwano, Mitsuru Kaga, Takatoshi Morita, Kouji Yamashita, , Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.)
(20) 13:40-14:05 Approaches for improving efficiency of AlGaN-based deep-UV LEDs ED2012-84 CPM2012-141 LQE2012-112 Yuji Tomita (Saitama Univ.), Hideki Hirayama, Sachie Fujikawa (RIKEN), Katsuya Mizusawa, Siro Toyoda, Norihiko Kamata (Saitama Univ.)
(21) 14:05-14:30 Fabrication of Si-doped AlGaN multiple-quantum wells by low-pressure MOVPE and its application for deep-UV-light-source ED2012-85 CPM2012-142 LQE2012-113 Shunsuke Ochiai, Mayuna Takagi (Mie Univ.), Fumitsugu Fukuyo (Mie Univ. /HAMAMATSU PHOTONICS), Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yuji Kobayashi, Harumasa Yoshida (HAMAMATSU PHOTONICS)
(22) 14:30-14:55 Analysis of band structure and Auger recombination process in wurtzite InGaN ED2012-86 CPM2012-143 LQE2012-114 Gen-ichi Hatakoshi, Shinya Nunoue (Toshiba)
(23) 14:55-15:20 The Effect of Carrier Transport and Thermal Activation Processes on Non-radiative Carrier Recombination Processes in InN Films ED2012-87 CPM2012-144 LQE2012-115 Daichi Imai, Yoshihiro Ishitani (Chiba Univ.), Xinqiang Wang (Peking Univ.), Kazuhide Kusakabe, Akihiko Yoshikawa (Chiba Univ. SMART)
  15:20-15:35 Break ( 15 min. )
(24) 15:35-16:00 Fabrication of radial InP/InAsP quantum wells on InP nanowires for near-infrared optical devices ED2012-88 CPM2012-145 LQE2012-116 Kenichi Kawaguchi, Yoshiaki Nakata, Mitsuru Ekawa, Tsuyoshi Yamamoto (Fujitsu Lab.), Yasuhiko Arakawa (Univ. of Tokyo)
(25) 16:00-16:25 Growth of InAs-QDs emitting at 1um with a broadband spectrum via In-flush method for biomedical imaging ED2012-89 CPM2012-146 LQE2012-117 Yuji Hino, Nobuhiko Ozaki (Wakayama Univ.), Shunsuke Ohkouchi (NEC Corp.), Naoki Ikeda, Yoshimasa Sugimoto (NIMS)
(26) 16:25-16:50 Study on inductively-coupled-plasma-dry-etching-mask for AlGaAs photonic crystal fabrication ED2012-90 CPM2012-147 LQE2012-118 Yuji Togano, Yuta Kitabayashi, Fumitaro Ishikawa, Masahiko Kondow (Osaka Univ.)
(27) 16:50-17:15 Development of Ge Light Emitter for Monolithic Light Source ED2012-91 CPM2012-148 LQE2012-119 Kazuki Tani, Shin-ichi Saito, Katsuya Oda (PETRA), Tadashi Okumura, Toshiyuki Mine (Hitachi), Tatemi Ido (PETRA)
(28) 17:15-17:40 Design of an optical spectrum control circuit and flattening its transmission spectrum with phase error compensation ED2012-92 CPM2012-149 LQE2012-120 Tatsuhiko Ikeda (Keio Univ.), Takayuki Mizuno, Hiroshi Takahashi (NTT), Hideaki Asakura, Hiroyuki Tsuda (Keio Univ.)

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Michihiko Suhara (Tokyo Metropolitan Univ.)
TEL : +81-42-677-2765 Fax : +81-42-677-2756
E- : t
Tetsuzo Ueda(Panasonic)
TEL:+81-75-956-8273、FAX:+81-75-956-9110
E-zopac 
CPM Technical Committee on Component Parts and Materials (CPM)   [Latest Schedule]
Contact Address  
LQE Technical Committee on Lasers and Quantum Electronics (LQE)   [Latest Schedule]
Contact Address Tomoyuki Miyamoto (Tokyo Institute of Technology)
TEL +81-45-924-5059, FAX +81-45-924-5977
E-: ttpi

Kazunori Shinoda (Hitachi)
TEL +81-42-323-1111,FAX +81-42-327-7786
E-: nv 
Announcement Homepage of LQE is http://www.ieice.org/~lqe/jpn/


Last modified: 2012-09-21 17:28:44


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