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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Yasuo Nara
Vice Chair Yuzou Oono (Univ. of Tsukuba)
Secretary Yoshitaka Sasago (Hitachi)
Assistant Rihito Kuroda (Tohoku Univ.)

Conference Date Fri, Dec 13, 2013 09:00 - 18:00
Topics Fabrication and Characterization of Si related materials 
Conference Place Nara Institute of Science and Technology Material Science 
Address 8916-5, Takayama, Ikoma, Nara 630-0192
Transportation Guide http://www.naist.jp/accessmap/index_j.html
Contact
Person
Prof. Yukiharu Uraoka
0743-72-6060
Sponsors This conference is co-sponsored by The Japan Society of Applied Physics.
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Fri, Dec 13 PM 
09:00 - 18:00
(1) 09:00-09:20 Analysis of thermal-induced degradation in oxide thin-film transistor under pulse voltage stress SDM2013-116 Kahori Kise (NAIST), Shigekazu Tomai (Idemitsu Kosan), Yoshihiro Ueoka, Haruka Yamazaki, Satoshi Urakawa (NAIST), Koki Yano (Idemitsu Kosan), Dapeng Wang, Mamoru Furuta (Kochi Univ. of Tech.), Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST)
(2) 09:20-09:40 Electrical characteristics of ALD-Al2O3 gate dielectric on n-GaN treated by high pressure water vapor annealing SDM2013-117 Koji Yoshitsugu, Tomoaki Umehara, Masahiro Horita, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST)
(3) 09:40-10:00 Photo Sensor using Poly-Si Thin-Film Devices SDM2013-118 Shohei Oyama, Atsushi Matsumura, Takayuki Kadonome, Takumi Tanaka, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)
(4) 10:00-10:20 Silicon nanowire growth by vapor liquid solid mode using indium dots SDM2013-119 Keigo Fukunaga, Tomoaki Hatayama, Hiroshi Yano, Naofumi Okamoto, Ayumi Tani, Yasuaki Ishikawa, Takashi Fuyuki (NAIST)
(5) 10:20-10:40 Study of Thin Film Solar Cell with Electric-Field Effect to Control Carrier Recombination SDM2013-120 Shota Wakamiya, Takahiro Kobayashi, Naoto Matsuo, Akira Heya (Univ. of Hyogo)
(6) 10:40-11:00 Fabrication of n-type Silicon Solar Cells by boron doping method using laser process SDM2013-121 Yuki Yamamoto, Hideki Nishimura, Takanori Okamura, Keigo Fukunaga, Takashi Fuyuki (NAIST)
(7) 11:00-11:20 Fabrication of Single-Crystalline Silicon Solar Cells by Laser Doping using Phosphorus-Doped Silicon Nano Ink SDM2013-122 Takanori Okamura, Hideki Nishimura, Takashi Fuyuki (NAIST), Yuka Tomizawa, Yoshinori Ikeda (Teijin)
(8) 11:20-11:40 Design and development of Gate Array using Poly-Si TFT SDM2013-123 Masashi Inoue, Tokiyoshi Matsuda, Mutsumi Kimura (Ryukoku Univ.)
(9) 11:40-12:00 Low-Temprature CLC Poly-Si TFTs with Sputtered Al2O3 Gate Dielectric Layer SDM2013-124 Tatsuya Meguro, Akito Hara (Tohoku Gakuin Univ.)
  12:00-13:00 Break ( 60 min. )
(10) 13:00-13:30 [Invited Talk]
Crystallization of Si Films and the Applications using BLDA (Blue Laser-Diode Annealing) SDM2013-125
Takashi Noguchi, Tatsuya Okada (Univ. of Ryukyus)
(11) 13:30-13:50 Low-Temperature Crystallization of Thin-Film Semiconductor by Soft X-ray Irradiation
-- Photon Energy Dependence and TEM Observation of SiGe Multilayer Film --
SDM2013-126
Fumito Kusakabe, Yuki Maruyama, Akira Heya, Naoto Matsuo, Kazuhiro Kanda, Takayasu Mochizuki (Univ. of Hyogo), Kazuhiro Ito, Makoto Takahashi (Osaka Univ.)
(12) 13:50-14:10 Development of Low-Temperature Activation of Boron in Silicon Using Soft X-ray Source SDM2013-127 Akira Heya, Fumito Kusakabe, Yuki Maruyama, Naoto Matsuo, Kazuhiro Kanda (Univ. of Hyogo), Takashi Noguchi (Univ. of the Ryukyus)
(13) 14:10-14:40 [Invited Talk]
Proposal of "Pore Engineering" as the Method for Controlling Resistive Switching Properties in Resistive Random Access Memory (ReRAM)
Kentaro Kinoshita (Tottori Univ./TEDREC), Sho Hasegawa (Tottori Univ.)
(14) 14:40-15:00 The Effect of Solvent Substitution on Memory Characteristics of Cu/HfO2/Pt Conducting-Bridge Random Access Memory (CB-RAM) SDM2013-129 Sho Hasegawa, Yutaro Enomoto, Naonobu Katada, Toshiyuki Ito, Satoru Kishida, Kentaro Kinoshita (Tottori Univ.)
  15:00-15:10 Break ( 10 min. )
(15) 15:10-15:40 [Invited Talk]
On-chip FRET aptasensor built on the surface of graphene derivative SDM2013-128
Yuko Ueno, Kazuaki Furukawa (NTT)
(16) 15:40-16:00 Elucidation of Metal Diffusion Mechanism in Conducting-Bridge Random Access Memory (CB-RAM) Using Ab Initio Calculation Sho Yura (Tottori Univ.), Takahiro Yamasaki (NIMS), Kengo Nakada, Akira Ishii (Tottori Univ.), Satoru Kishida, Kentaro Kinoshita (Tottori Univ./TEDREC)
(17) 16:00-16:20 Data Retention Characteristics of Resistive Random Access Memory Consisting of Transition Metal Oxide Masataka Yosihara, Ryosuke Ogata, Naohiro Murayama (Tottori Univ.), Satoru Kishida, Kentaro Kinoshita (Tottori Univ./TEDREC)
(18) 16:20-16:40 Fabrication of Ferroelectric Microstructures by Proton Beam Irradiation SDM2013-130 Kazuki Watanabe, Masaki Yamaguchi, Hiroyuki Nishikawa (Shibaura Inst. of Tech.)
(19) 16:40-17:00 Shape and Size Effects on Electron Mobility of Rectangular Cross-sectional Ge Nanowires SDM2013-131 Hajime Tanaka, Seigo Mori, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.)
(20) 17:00-17:20 A Study of Threshold Voltage Instability in 4H-SiC MOSFETs with POCl3- and NO-Annealed Gate Oxides SDM2013-132 Natsuko Kanafuji, Hiroshi Yano, Ai Osawa, Tomoaki Hatayama, Takashi Fuyuki (NAIST)
(21) 17:20-17:40 Characterization of interface states in SiC MOS structures with various crystal faces by conductance method SDM2013-133 Seiya Nakazawa, Yuichiro Nanen, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.)
(22) 17:40-18:00 Structural Change of Silicon Carbide Surface Etched by Chlorine-Trifluoride SDM2013-134 Ryota Hori, Tomoaki Hatayama, Hiroshi Yano, Takashi Fuyuki (NAIST)

Announcement for Speakers
General Talk (20)Each speech will have 15 minutes for presentation and 5 minutes for discussion.
Invited Talk (30)Each speech will have 25 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Yukinori Ono(NTT)
Tel 046-240-2641 Fax 046-240-4317
E-: o 


Last modified: 2013-11-30 22:00:50


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