|
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| Chair |
|
Takao Waho |
| Vice Chair |
|
Masaaki Kuzuhara |
| Secretary |
|
Tsuyoshi Tanaka, Manabu Arai |
| Assistant |
|
Shin-ichiro Takatani, Koichi Murata |
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|
|
| Chair |
|
Tanemasa Asano |
| Vice Chair |
|
Toshihiro Sugii |
| Secretary |
|
Morifumi Ohno, Shigeru Kawanaka |
| Assistant |
|
Yuichi Matsui |
|
| Conference Date |
Thu, Feb 1, 2007 13:30 - 17:00
Fri, Feb 2, 2007 09:30 - 14:00 |
| Topics |
|
| Conference Place |
|
Thu, Feb 1 PM
13:30 - 14:30 |
| (1) |
13:30-13:50 |
Physics-based SPICE modeling of triple barrier resonant tunneling diodes |
Naoya Asaoka, Michihiko Suhara, Tsugunori Okumura (Tokyo Metropolitan Univ.) |
| (2) |
13:50-14:10 |
Analysis on Resonant-Tunneling 4RTD Logic Gate Operation |
Hiroki Okuyama, Kentaro Sugawara, Tomohiko Ebata, Takao Waho (Sophia Univ.) |
| (3) |
14:10-14:30 |
A resonant tunneling diode pair oscillator for high power operation |
Koichi Maezawa (Univ. of Toyama), Yohei Ookawa, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.) |
| |
14:30-14:45 |
Break ( 15 min. ) |
Thu, Feb 1 PM
14:45 - 15:45 |
| (4) |
14:45-15:25 |
[Invited Talk]
SiGe Quantum Effect Devices |
Yoshiyuki Suda, Hirotaka Maekawa, Yoshihiro Sano, Youichi Takahashi, Tadamasa Kobayashi, Hiroaki Hanafusa (TUAT) |
| (5) |
15:25-15:45 |
Theoretical analysis of fluoride-based intersubband transition lasers on Si substrate |
Keisuke Jinen, Kaoru Uchida, Shinji Kodaira (Tokyo Inst. Tech.), Masahiro Watanabe, Masahiro Asada (Tokyo Inst. Tech./JST-SORST) |
| |
15:45-16:00 |
Break ( 15 min. ) |
Thu, Feb 1 PM
16:00 - 17:00 |
| (6) |
16:00-16:20 |
Investigation of A Novel Logic Circuit Implementation Scheme Utilizing Topological Correlation between Logic Graph by Decision Diagram and Nanowire Network Structures |
Seiya Kasai, Tatsuya Nakamura, Yuta Shiratori (Hokkaido Univ.) |
| (7) |
16:20-16:40 |
Single-electron device using Si nanodot array and multi-input gates |
Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara, Kenji Yamazaki, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Yasuo Takahashi (Hokkaido Univ.) |
| (8) |
16:40-17:00 |
- |
Tetsuya Hirose, Tetsuya Asai, Yoshihito Amemiya (Hokkaido Univ.) |
Fri, Feb 2 AM
09:30 - 10:30 |
| (9) |
09:30-09:50 |
Dependency of spin-orbit interaction in InAs HEMT on electric field perpendicular to the channel |
Takashi Matsuda, Kanji Yo (Hokkaido Univ.) |
| (10) |
09:50-10:10 |
Fabrication of epitaxial magnetic tunnel junctions with a Heusler alloy Co2Cr0.6Fe0.4Al thin film and a MgO tunnel barrier and their tunnel magnetoresistance characteristics |
Takao Marukame, Takayuki Ishikawa, Kenichi Matsuda, Tetsuya Uemura, Masafumi Yamamoto (Hokkaido Univ.) |
| (11) |
10:10-10:30 |
Non-volatile ternary content addressable memory using CoFe-based magnetic tunnel junction |
Tetsuya Uemura, Takao Marukame, Kenichi Matsuda, Masafumi Yamamoto (Hokkaido Univ.) |
| |
10:30-10:45 |
Break ( 15 min. ) |
Fri, Feb 2 AM
10:45 - 11:45 |
| (12) |
10:45-11:05 |
Transport property of nanographite patterned on Silicon dioxide |
Keita Konishi, Takashi Matsuda, Youji Kan (Hokkaido Univ.) |
| (13) |
11:05-11:25 |
Ballistic electron transport properties and rectification effects in InAs/AlGaSb mesoscopic structures |
Masatoshi Koyama, Hiroshi Takahashi, Tatsuya Inoue, Toshihiko Maemoto, Shigehiko Sasa, Masataka Inoue (Osaka Inst. Tech.) |
| (14) |
11:25-11:45 |
Fabrication and Characterization of Three-GaAs Nanowire-Junction Devices Controlled by Schottky Wrap Gates |
Tatsuya Nakamura, Seiya Kasai, Yuta Shiratori, Tamotsu Hashizume (Hokkaido Univ.) |
| |
11:45-13:00 |
Break ( 75 min. ) |
Fri, Feb 2 PM
13:00 - 14:00 |
| (15) |
13:00-13:20 |
Cotunneling Current in Si Single-electron Transistor Based on Multiple Islands |
Kensaku Ohkura, Tetsuya Kitade, Anri Nakajima (Hiroshima Univ.) |
| (16) |
13:20-13:40 |
Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays |
Daniel Moraru (Shizuoka Univ.), Yukinori Ono (ＮＴＴ), Hiroshi Inokawa, Kiyohito Yokoi, Ratno Nuryadi, Hiroya Ikeda, Michiharu Tabe (Shizuoka Univ.) |
| (17) |
13:40-14:00 |
Photon irradiation effects on Si multiple-tunnel-junction field-effect transistors
-- Sensing the presence of a single-charge in the substrate -- |
Zainal Burhanudin, Ratno Nuryadi, Michiharu Tabe (Shizuoka Univ.) |
| Contact Address and Latest Schedule Information |
| ED |
Technical Committee on Electron Device (ED) [Latest Schedule]
|
| Contact Address |
Tsuyoshi Tanaka（Matsushita）
TEL: 075-956-9083, FAX: 075-956-9110
E- :     erl  ci
Manabu Arai（New JRC）
TEL: 049-278-1477、FAX: 049-278-1419
E-:   injr
Shinichiro Takatani（Hitachi）
TEL: 049-278-1477、FAX: 049-278-1419
E-: injr
Koichi Murata（NTT)
TEL：046-240-2871、FAX：046-270-2872
E-：  aecl |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
Yasushiro Nishioka (Nihon University, College of Science and Technology)
TEL047-469-6482,FAX047-467-9504
E-:   e t n-u ,a  cmsk  |
Last modified: 2006-11-21 18:58:11
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