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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Shigeyoshi Watanabe (Shonan Inst. of Tech.)
Vice Chair Toshihiro Sugii (Fujitsu Microelectronics)
Secretary Hisahiro Anzai (Sony), Tetsuro Endo (Tohoku Univ.)
Assistant Katsunori Onishi (Kyushu Inst. of Tech.)

Technical Committee on Integrated Circuits and Devices (ICD) [schedule] [select]
Chair Kunio Uchiyama (Hitachi)
Vice Chair Masahiko Yoshimoto (Kobe Univ.)
Secretary Minoru Fujishima (Univ. of Tokyo), Yoshio Hirose (Fujitsu Labs.)
Assistant Hiroaki Suzuki (Renesas), Toshimasa Matsuoka (Osaka Univ.), Kenichi Okada (Tokyo Inst. of Tech.)

Conference Date Thu, Jul 16, 2009 09:55 - 16:15
Fri, Jul 17, 2009 09:30 - 17:55
Topics Low voltage/low power techniques, novel devices, circuits, and applications 
Conference Place International House; Main Building, Ookayama Campus, Tokyo Inst. of Tech. 
Address 2-12-1 Ookayama, Meguro-ku, Tokyo 152-8550
Transportation Guide 10min. walk from Ookayama Station of Tokyu Meguro Line
http://www.titech.ac.jp/english/about/campus/index.html
Copyright
and
reproduction
以下の論文すべての著作権はIEICEに帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Thu, Jul 16 AM 
09:55 - 12:15
(1) 09:55-10:00 Opening Address
(2) 10:00-10:25 63GHz 36mW CMOS Differential Low-Noise Amplifier with 14GHz Bandwidth SDM2009-97 ICD2009-13 Minoru Fujishima, Youhei Natsukari (Univ.. of Tokyo.)
(3) 10:25-10:50 A 100Mbps, 1.28mW Impulse Radio UWB Receiver with Charge-Domain Sampling Correlator in 0.18um CMOS SDM2009-98 ICD2009-14 Lechang Liu, Takayasu Sakurai, Makoto Takamiya (Univ. of Tokyo)
  10:50-11:00 Break ( 10 min. )
(4) 11:00-11:25 49mW 5Gbps CMOS 60GHz Pulse Receiver for Wireless Communication SDM2009-99 ICD2009-15 Ahmet Oncu, Minoru Fujishima (Univ. of Tokyo.)
(5) 11:25-11:50 Low Energy Building Design in Packet Buffer Architecture with Deterministic Performance Guarantee SDM2009-100 ICD2009-16 Kazuya Zaitsu (Osaka City Univ.), Hisashi Iwamoto, Yasuto Kuroda, Yuji Yano (Renesas Technology), Koji Yamamoto (Renesas Design), Kazunari Inoue (Renesas Technology), Shingo Ata, Ikuo Oka (Osaka City Univ.)
(6) 11:50-12:15 The low power circuit design techniques for 2.88Gbps UWB transceiver SDM2009-101 ICD2009-17 Naoki Oshima, Keiichi Numata, Hiroshi Kodama, Hiromu Ishikawa, Hitoshi Yano, Akio Tanaka (NEC)
  12:15-13:15 Lunch ( 60 min. )
Thu, Jul 16 PM 
13:15 - 16:15
(7) 13:15-14:00 [Invited Talk]
Issues and Future Prospects for Large Scale Integration using CNT devices SDM2009-102 ICD2009-18
Shinobu Fujita (Toshiba Corp.)
(8) 14:00-14:25 A 60pJ, 3-Clock Rising Time, VTH Loss Compensated Word-line Booster Circuit for 0.5V Power Supply Embedded/Discrete DRAMs SDM2009-103 ICD2009-19 Shuhei Tanakamaru, Ken Takeuchi (Univ. of Tokyo)
(9) 14:25-14:50 Ferroelectric(Fe)-NAND Flash Memory with Non-volatile Page Buffer for Data Center Application Enterprise Solid-State Drives (SSD) SDM2009-104 ICD2009-20 Ryoji Yajima, Teruyoshi Hatanaka (Univ. of Tokyo), Mitsue Takahashi, Shigeki Sakai (AIST), Ken Takeuchi (Univ. of Tokyo)
  14:50-15:00 Break ( 10 min. )
(10) 15:00-15:25 Mobility in Silicon Nanowire GAA Transistor on (110) SOI SDM2009-105 ICD2009-21 Jiezhi Chen, Takuya Saraya, Toshiro Hiramoto (Univ. of Tokyo.)
(11) 15:25-15:50 Comprehensive Design Methodology of Dopant Profile to Suppress Gate-LER-induced Threshold Voltage Variability in sub-30 nm NMOSFETs SDM2009-106 ICD2009-22 Hidenobu Fukutome (Fujitsu Microelectronics Limited), Yoko Hori (Fujitsu Quality Lab. Limited), Kimihiko Hosaka, Yoichi Momiyama, Shigeo Satoh, Toshihiro Sugii (Fujitsu Microelectronics Limited)
(12) 15:50-16:15 The Study of Mobility-Tinv Trade-off in Deeply Scaled High-k/Metal Gate Devices and Scaling Design Guideline for 22nm-node Generation SDM2009-107 ICD2009-23 Masakazu Goto, Shigeru Kawanaka, Seiji Inumiya, Naoki Kusunoki, Masumi Saitoh, Kosuke Tatsumura, Atsuhiro Kinoshita, Satoshi Inaba, Yoshiaki Toyoshima (Toshiba)
Fri, Jul 17 AM 
09:30 - 12:25
(1) 09:30-09:55 Study of stacked NAND type 1-transistor FeRAM SDM2009-108 ICD2009-24 Koichi Sugano, Shigeyoshi Watanabe (Shonan Inst. of Tech.)
(2) 09:55-10:20 Study of stacked NAND type MRAM for universal memory SDM2009-109 ICD2009-25 Shouto Tamai, Shigeyoshi Watanabe (Shonan Inst. of Tech.)
(3) 10:20-11:05 [Invited Talk]
NanoBridge embedded into Cu interconnect SDM2009-110 ICD2009-26
Toshitsugu Sakamoto, Munehiro Tada, Yukihide Tsuji, Naoki Banno, Hiromitsu Hada (NEC Corp.), Masakazu Aono (NIMS)
  11:05-11:15 Break ( 10 min. )
(4) 11:15-12:00 [Invited Talk]
Impact of Silicon Technology in "Beyond CMOS" World SDM2009-111 ICD2009-27
Tetsuo Endoh, Takahiro Hanyu (Tohoku Univ.)
(5) 12:00-12:25 Cross-Point phase change memory with 4F2 cell size driven by low-contact resistivity poly-si diode SDM2009-112 ICD2009-28 Yoshitaka Sasago, Masaharu Kinoshita, Takahiro Morikawa, Kenzo Kurotsuchi, Satoru Hanzawa, Toshiyuki Mine, Akio Shima, Yoshihisa Fujisaki, Hitoshi Kume, Hiroshi Moriya, Norikatsu Takaura, Kazuyoshi Torii (Hitachi)
  12:25-13:25 Lunch ( 60 min. )
Fri, Jul 17 PM 
13:25 - 17:55
(6) 13:25-14:10 [Invited Talk]
Spin-Transistor Electronics SDM2009-113 ICD2009-29
Satoshi Sugahara (Tokyo Inst. of Tech./JST)
(7) 14:10-14:35 Low Current Perpendicular Domain Wall Motion Cell for Scalable High-Speed MRAM SDM2009-114 ICD2009-30 Shunsuke Fukami, Tetsuhiro Suzuki, Kiyokazu Nagahara, Norikazu Ohshima (NEC Corp.), Yasuaki Ozaki (NECEL Corp.), Shinsaku Saito, Ryusuke Nebashi, Noboru Sakimura, Hiroaki Honjo, Kaoru Mori, Chuji Igarashi, Sadahiko Miura, Nobuyuki Ishiwata, Tadahiko Sugibayashi (NEC Corp.)
  14:35-14:45 Break ( 10 min. )
(8) 14:45-15:30 [Invited Talk]
Nanotechnology supporting to realize information society friendly to humans and the earth SDM2009-115 ICD2009-31
Shuichi Tahara (NEC Corp.)
(9) 15:30-16:15 [Invited Talk]
Development of Graphene Devices and their Future SDM2009-116 ICD2009-32
Taiichi Otsuji (Tohoku Univ.)
  16:15-16:25 Break ( 10 min. )
(10) 16:25-17:55 Panel Discussion :
"Beyond CMOS integration with CMOS platform"
Oganizer: Toshiro Hiramoto(Univ. of Tokyo)
Panelists: Shinobu Fujita(Toshiba)
Satoshi Sugahara(Tokyo Inst. of Tech.)
Toshitsugu Sakamoto(NEC)
Shuichi Tahara(NEC)
Tstsuro Endo(Tohoku Univ.)
Taiichi Otsuji (Tohoku Univ.)

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.
Invited TalkEach speech will have 40 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Hisahiro Ansai(Sony)
Tel 046-201-3297 Fax046-202-6572
E-: HiAniny 
ICD Technical Committee on Integrated Circuits and Devices (ICD)   [Latest Schedule]
Contact Address Minoru Fujishima (The University of Tokyo)
TEL 03-5841-7425,FAX 03-5841-8575
E-:eetu- 


Last modified: 2009-09-07 13:31:45


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