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Technical Committee on Electron Device (ED) [schedule] [select]
Chair Masaaki Kuzuhara (Univ. of Fukui)
Vice Chair Tamotsu Hashidume (Hokkaido Univ.)
Secretary Koichi Murata (NTT)
Assistant Naoki Hara (Fujitsu Labs.), Kunio Tsuda (Toshiba)

Conference Date Fri, Dec 19, 2008 13:00 - 17:00
Sat, Dec 20, 2008 09:00 - 12:55
Topics Millimeter-wave, THz-wave Devices and Systems 
Conference Place Katahira Campus, Tohoku University 
Address 2-1-1, Katahira, Aoba-ku, Sendai-shi, 980-8577 Japan
Transportation Guide http://www.riec.tohoku.ac.jp/~www/access/index-e.shtml
Contact
Person
Prof. Taiichi Otsuji
022-217-6104
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and
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Fri, Dec 19 PM 
13:00 - 17:00
(1) 13:00-13:40 [Invited Talk]
Investigation of liquids and solids with THz time-domain spectroscopy ED2008-184
Peter Jepsen, Jens Kristian Jensen, David Cooke, Peter Uhd Jepsen (Technical Univ. of Denmark)
(2) 13:40-14:20 [Invited Talk]
Integrated strip-line devices and its application to THz-TDS ED2008-185
Yutaka Kadoya, Jiro Kitagawa, Yasutaka Akiyama, Naoto Ohta (Hiroshima Univ.)
(3) 14:20-14:45 Terahertz time delay imaging of frozen biological tissues ED2008-186 Hiromichi Hoshina, Aya Hayashi (RIKEN), Norio Miyoshi (University of Fukui), Fumiaki Miyamaru (Shinshu University), Chiko Otani (RIKEN)
  14:45-15:05 Break ( 20 min. )
(4) 15:05-15:30 Ultrahigh-Speed Operations of InAlAs/In0.7Ga0.3As HEMTs under Cryogenic Conditions ED2008-187 Akira Endoh, Issei Watanabe (NICT), Keisuke Shinohara (NICT/HRL Labs.), Takashi Mimura (Fujitsu Labs.), Toshiaki Matsui (NICT)
(5) 15:30-15:55 60GHz High Isolation SPDT MMIC Switches. ED2008-188 Yoshihiro Tsukahara, Hirotaka Amasuga, Seiki Goto, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric Corp.)
(6) 15:55-16:20 A W-band 10-Gb/s Wavelet Generator Using 0.13-um InP HEMTs for Impulse Radio Systems ED2008-189 Yasuhiro Nakasha, Yoichi Kawano, Toshihide Suzuki (Fujitsu), Toshihiro Ohki (Fujitsu Labs.), Tsuyoshi Takahashi, Kozo Makiyama (Fujitsu), Tatsuya Hirose (Fujitsu Labs.), Naoki Hara (Fujitsu)
(7) 16:20-17:00 [Invited Talk]
Wireless system technologies and millimeter-wave device research ED2008-190
Toshiaki Matsui, Issei Watanabe, Akira Endoh, Yoshimi Yamashita, Norio Onojima, Masataka Higashiwaki, Nobumitsu Hirose (NICT)
Sat, Dec 20 AM 
09:00 - 12:55
(8) 09:00-09:40 [Invited Talk]
Development of superconducting photonic devices operating in terahertz frequency range ED2008-191
Iwao Kawayama, Yasushi Doda, Hironaru Murakami, Masayoshi Tonouchi (Osaka Univ.)
(9) 09:40-10:05 Efficient and polarization controled terahertz wave generation from GaP waveguide structures ED2008-192 Kyosuke Saito, Kei Nozawa, Tadao Tanabe, Yutaka Oyama (Tohoku Univ.), Tetsuo Sasaki, Jun-ichi Nishizawa (TMU)
(10) 10:05-10:30 GaP crystal length and beam spot size dependences on the output power of CW THz waves ED2008-193 Srinivasa Ragam, Tadao Tanabe, Yutaka Oyama (Tohoku Univ.), Tetsuo Sasaki, Jun-ichi Nishizawa (Tokyo Metropolitan Univ.)
  10:30-10:45 Break ( 15 min. )
(11) 10:45-11:25 [Invited Talk]
Emission and detection using two dimensional plasma oscillations in nanometer transistors and their applications to terahertz imaging ED2008-194
Abdelouahad El Fatimy, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.), P. Mounaix, J. C. Delagnes (Univ. Bordeaux), Wojciech Knap, Nina Dyakonova (Univ. Montpellier2)
(12) 11:25-11:50 Effect of parasitic gate fringing capacitance on the terahertz plasma resonance in HEMT's ED2008-195 Nobuhiro Magome, Takuya Nishimura (Tohoku Univ.), Irina Khmyrova (Univ. of Aizu), Tetsuya Suemitsu (Tohoku Univ.), Wojtek Knap (Univ. Montpellier2), Taiichi Otsuji (Tohoku Univ.)
(13) 11:50-12:30 [Invited Talk]
Terahertz-wave detection by InP-based Schottky barrier diode fabricated using UTC-PD epi-layers ED2008-196
Hiroshi Ito (Kitasato Univ.), Tomofumi Furuta (NTT)
(14) 12:30-12:55 THz Signal Converted from Optical Signal by Photogenerated Carrier ED2008-197 Yuki Numajiri, Ryo Yokoyama, Mizuki Shirao, Nobuhiko Nishiyama, Masahiro Asada, Shigehisa Arai (Tokyo Tech)

Announcement for Speakers
General Talk (25)Each speech will have 20 minutes for presentation and 5 minutes for discussion.
Invited Talk (40)Each speech will have 30 minutes for presentation and 10 minutes for discussion.

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Koichi Murata(NTT)
TEL:046-240-2871、FAX:046-270-2872
E-aecl
Hara Naoki (Fujitsu Lab.)
TEL : 046-250-8242、FAX : 046-250-8168
E- : o
Kunio Tsuda(Toshiba)
TEL : 044-549-2142、FAX : 044-520-1501
E- : oba 


Last modified: 2008-10-23 11:02:49


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