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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Tatsuya Kunikiyo (Renesas)
Vice Chair Takahiro Shinada (Tohoku Univ.)
Secretary Rihito Kuroda (Tohoku Univ.), Tadashi Yamaguchi (Renesas)
Assistant Hiroya Ikeda (Shizuoka Univ.), Tetsu Morooka (TOSHIBA MEMORY)

Conference Date Thu, Nov 9, 2017 10:00 - 16:40
Fri, Nov 10, 2017 10:00 - 16:40
Topics Process, Device, Circuit simulation, etc. 
Conference Place  
Sponsors This conference is co-sponsored by The Japan Society of Applied Physics.
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Thu, Nov 9 AM 
10:00 - 12:00
(1) 10:00-11:00 [Invited Talk]
Multri-Physics Simulation of GaN MOVPE Growth SDM2017-61
Kenji Shiraishi, Kazuki Sekiguchi, Kenta Chokawa, Hiroki Shirakawa, Kento Kawakami, Yoshihiro Yamamoto, Masaaki Araidai, Naoya Okamoto, Katsumori Yoshimatsu (Nagoya Univ.), Yoshihiro Kangawa, Koichi Kakimoto (Kyushu Univ.)
(2) 11:00-12:00 [Invited Talk]
SISPAD 2017 Review (1) SDM2017-62
Akira Hiroki (Kyoto Inst. Tech.)
  12:00-13:05 Lunch Break ( 65 min. )
Thu, Nov 9 PM 
13:05 - 15:30
(3) 13:05-13:30 Simple and efficient approach to improve hot carrier immunity of a p-LDMOSFET SDM2017-63 Atsushi Sakai, Katsumi Eikyu (REL), Fujii Hiroki, Takahiro Mori (RSMC), Yutaka Akiyama, Yasuo Yamaguchi (REL)
(4) 13:30-14:30 [Invited Talk]
Impurity Diffusion Modeling in SiC SDM2017-64
Masashi Uematsu (Keio Univ.)
(5) 14:30-15:30 [Invited Talk]
Characterization and modeling of SiC power MOSFET SDM2017-65
Takashi Sato, Kazuki Oishi, Masayuki Hiromoto (Kyoto Univ.), Michihiro Shintani (NAIST)
  15:30-15:40 Break ( 10 min. )
Thu, Nov 9 PM 
15:40 - 16:40
(6) 15:40-16:40 [Invited Talk]
GaN MOS capacitance simulation considering deep traps SDM2017-66
Koichi Fukuda, Hidehiro Asai, Junichi Hattori, Mitsuaki Shimizu (AIST), Tamotsu Hashizume (Hokkaido Univ.)
Fri, Nov 10  
10:00 - 12:00
(7) 10:00-11:00 [Invited Talk]
SISPAD 2017 Review (2) SDM2017-67
Takashi Kurusu (TMC)
(8) 11:00-12:00 [Invited Talk]
Fundamental Aspects of Semiconductor Device Modeling associated with Discrete Impurities
-- Random Dopant Fluctuations and Self-Averaging --
SDM2017-68
Nobuyuki Sano (Univ. Tsukuba)
  12:00-13:30 Lunch Break ( 90 min. )
Fri, Nov 10 PM 
13:30 - 15:30
(9) 13:30-14:30 [Invited Talk]
Quantum Transport Simulation of Ultra-Small Transistors SDM2017-69
Nobuya Mori, Gennady Mil'nikov (Osaka Univ), Junichi Iwata, Atsushi Oshiyama (Univ of Tokyo)
(10) 14:30-15:30 [Invited Talk]
An Accurate Metric to Control Time Step of Transient Device Simulation by Matrix Exponential Method SDM2017-70
Shigetaka Kumashiro, Tatsuya Kamei, Akira Hiroki, Kazutoshi Kobayashi (KIT)
  15:30-15:40 Break ( 10 min. )
Fri, Nov 10 PM 
15:40 - 16:40
(11) 15:40-16:40 [Invited Talk]
A SPICE-compatible SG-MONOS model for 28nm embedded flash macro design considering the parasitic resistance caused by trapped charges SDM2017-71
Risho Koh, Mitsuru Miyamori, Katsumi Tsuneno, Tetsuya Muta, Yoshiyuki Kawashima (Renesas electronics)

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.
Invited TalkEach speech will have 55 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E-: e3 


Last modified: 2018-02-01 21:23:47


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