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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Yuzou Oono (Univ. of Tsukuba)
Vice Chair Tatsuya Kunikiyo (Renesas)
Secretary Rihito Kuroda (Tohoku Univ.)
Assistant Tadashi Yamaguchi (Renesas)

Conference Date Fri, Jun 19, 2015 09:30 - 17:30
Topics Material Science and Process Technology for MOS Devices and Memories 
Conference Place  
Sponsors This conference is co-sponsored by The Japan Society of Applied Physics.
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Fri, Jun 19 AM 
09:30 - 17:30
(1) 09:30-09:50 [Invited Lecture]
Interface states characterization of Al2O3/AlGaN/GaN structures SDM2015-38
Zenji Yatabe, Tamotsu Hashizume (Hokkaido Univ.)
(2) 09:50-10:10 [Invited Lecture]
Characterization of traps in MOCVD n-GaN by capacitance transient spectroscopy SDM2015-39
Yutaka Tokuda (Aich Inst. of Technol.)
(3) 10:10-10:30 [Invited Lecture]
Al2O3/Ga2O3 interface structure and its surface orientation dependence SDM2015-40
Takafumi Kamimura, Daivasigamani Krishnamurthy (NICT), Akito Kuramata, Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT)
  10:30-10:50 Break ( 20 min. )
(4) 10:50-11:10 [Invited Lecture]
Investigation of SiC MOSFETs with 3C/4H Different Poly-Type Junctions SDM2015-41
Muentaka Noguchi, Toshiaki Iwamatsu, Naruhisa Miura, Shuhei Nakata, Satoshi Yamakawa (Mitsubishi Electric)
(5) 11:10-11:30 [Invited Lecture]
Characteristics of nitrogen incorporation at SiC/SiO2 interface on Si-face and C-face 4H-SiC SDM2015-42
Daisuke Mori, Kei Inoue, Hideaki Teranishi, Takayuki Hirose, Aki Takigawa (Fuji Electric)
(6) 11:30-11:50 [Invited Lecture]
Effect of oxynitridation annealing on defect properties at SiO2/SiC MOS interface SDM2015-43
Wakana Takeuchi (Nagoya Univ.), Kensaku Yamamoto (DENSO CORP.), Mitsuo Sakashita (Nagoya Univ.), Takashi Kanemura (DENSO CORP.), Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)
  11:50-12:40 Break ( 50 min. )
(7) 12:40-13:00 Photoemission Study on Chemical Bonding Features and Electronic Defect States of Thermally grown SiO2/4H-SiC Structure SDM2015-44 Hiromasa Watanabe, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ)
(8) 13:00-13:20 First-Principles Study on Hydrogen Annealing Effect in Si/SiO2 Interface by Thermal Oxidation SDM2015-45 Shingo Kawachi, Hiroki Shirakawa, Masaaki Araidai (Nagoya Univ.), Hiroyuki Kageshima (Shimane Univ.), Tetsuo Endoh (Tohoku Univ.), Kenji Shiraishi (Nagoya Univ.)
(9) 13:20-13:40 Impact of Embedded Ti Nanodots on Resistive Switching Characteristics of Si-rich Oxides SDM2015-46 Yuusuke Kato, Takashi Arai, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)
(10) 13:40-14:00 Fabrication of PtGe/Ge contacts with low hole barrier and its application to metal source/drain Ge p-channel MOSFETs SDM2015-47 Yuta Nagatomi, Shintaro Tanaka, Yuichi Nagaoka, Keisuke Yamamoto, Dong Wang, Hiroshi Nakashima (Kyushu Univ.)
  14:00-14:15 Break ( 15 min. )
(11) 14:15-14:35 Understanding of Schottky Barrier Height Modulation at NiGe/Ge Interfaces for Metal S/D Ge CMOS Technology SDM2015-48 Hiroshi Oka, Yuya Minoura, Ryohei Asahara, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)
(12) 14:35-14:55 Control of electrical conduction property at metal/Ge interface by introducing ultra-high Sn content SnxGe1-x/Ge interlayer SDM2015-49 Akihiro Suzuki, Shigehisa Shibayama, Mitsuo Sakashita, Wakana Takeuchi, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)
(13) 14:55-15:15 Effect of annealing on defects in Ge1-xSnx epitaxial layers SDM2015-50 Takanori Asano, Shigehisa Shibayama, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.)
(14) 15:15-15:35 Electrical properties of GIZO TFT with ultrathin Al2O3 insulators by PE-ALD method SDM2015-51 Kazunori Kurishima (Meiji Univ./NIMS), Toshihide Nabatame, Kazuhito Tsukagoshi, Akihiko Ohi, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.)
  15:35-15:50 Break ( 15 min. )
(15) 15:50-16:10 Fully compatible resistive random access memory with amorphous InGaZnO based thin film transistor fabrication process SDM2015-52 Keisuke Kado, Mutsunori Uenuma, Kyouhei Nabesaka, Kriti Sharma, Haruka Yamazaki, Satoshi Urakawa, Mami Fujii, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST)
(16) 16:10-16:30 Improvements of electrical properties of wafer-bonded GeOI substrates with ultrathin Al2O3/SiO2 hybrid BOX layers by post-annealing SDM2015-53 Keisuke Yoshida, Shotaro Takeuchi, Yoshiaki Nakamura, Akira Sakai (Osaka Univ.)
(17) 16:30-16:50 [Invited Lecture]
Bandgap opening and electrode contact resistances in bilayer graphene field-effect transistors SDM2015-54
Ryo Nouchi (Osaka Pref. Univ.)
(18) 16:50-17:10 [Invited Lecture]
Electrostatically-controllable polarity of transistors on atomically-thin films SDM2015-55
Shu Nakaharai (NIMS), Tomohiko Iijima, Shinichi Ogawa, Katsunori Yagi, Naoki Harada, Kenjiro Hayashi, Daiyu Kondo, Makoto Takahashi (AIST), Songlin Li, Mahito Yamamoto, Yen-Fu Lin (NIMS), Keiji Ueno (Saitama Univ.), Kazuhito Tsukagoshi (NIMS), Shintaro Sato, Naoki Yokoyama (AIST)
(19) 17:10-17:30 [Invited Lecture]
Fabrication and Characterization of MoS2 MOSFET with High-k/Metal Gate SDM2015-56
Takahiro Mori (AIST), Naruki Ninomiya (YNU), Noriyuki Uchida, Toshitaka Kubo (AIST), Eiichiro Watanabe, Daiju Tsuya, Satoshi Moriyama (NIMS), Masatoshi Tanaka (YNU), Atsushi Ando (AIST)

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E-: fffe 


Last modified: 2015-04-27 19:54:27


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