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Technical Committee on Electron Device (ED) [schedule] [select]
Chair Tetsu Kachi (Toyota Central R&D Labs.)
Vice Chair Naoki Hara (Fujitsu Labs.)
Secretary Kunio Tsuda (Toshiba), Michihiko Suhara (Tokyo Metropolitan Univ.)
Assistant Tetsuzo Ueda (Panasonic), Seiya Kasai (Hokkaido Univ.)

Technical Committee on Microwaves (MW) [schedule] [select]
Chair Takashi Ohira (Toyohashi Univ. of Tech.)
Vice Chair Futoshi Kuroki (Kure National College of Tech.), Masashi Nakatsugawa (NTT), Kenji Kawakami (Mitsubishi Electric)
Secretary Kenjiro Nishikawa (Kagoshima Univ.), Hiroyuki Kayano (Toshiba)
Assistant Kei Sato (NTT DoCoMo), Hirokazu Kamoda (NHK)

Conference Date Wed, Jan 11, 2012 10:10 - 16:50
Thu, Jan 12, 2012 10:10 - 16:50
Topics  
Conference Place  
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (No. 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Wed, Jan 11 PM 
10:10 - 16:50
  10:10-10:15 Opening Address ( 5 min. )
(1) 10:15-10:40 Microwave Power Beaming Experiments in Tronto and Hawaii for the Solar Power Satellite ED2011-119 MW2011-142 Nobuyuki Kaya, Masashi Iwashita (Kobe Univ.)
(2) 10:40-11:05 A Fundamental Study on Super Thin One-Layered Wave Absorber Using a High Dielectric Loss Material in Microwave Band ED2011-120 MW2011-143 Takato Fujita, Yuki Tsuda, Takenori Yasuzumi, Osamu Hashimoto (Aoyama Gakuin Univ.), Takashi Wano, Yuuki Fukuda (NITTO Denko LTD.)
(3) 11:05-11:30 A study of CMOS-technology-based millimeterwave LPF/HPF/BPF with transmission zeros by using coupled-line and transmission line ED2011-121 MW2011-144 Kosei Tanii (UEC), Mitsuo Makimoto (Sakura Tech), Sadao Igarashi, Kuniaki Fukui, Kouichi Kobinata (RF Chips), Koji Wada (UEC)
(4) 11:30-11:55 Design of a Quasi-Millimeter-Wave Bandpass Filter Using Multilayered SIW Dual-Mode Resonators ED2011-122 MW2011-145 Kazuya Tobita, Zhewang Ma, Masataka Ohira (Saitama Univ.)
  11:55-13:00 Lunch Break ( 65 min. )
(5) 13:00-13:25 Band Broadening of Waveguide/Microstrip-line Transformer for Millimeter-wave Band ED2011-123 MW2011-146 Toshitatsu Suzuki, Yozo Utsumi, Noboru Morita, Takefumi Hiraguri (Nippon Inst. of Tech.), Munehiro Yokota, Toshihisa Kamei (NDA), Kiyozumi Chino, Ikurou Aoki, Hirosuke Suzuki (KEYCOM)
(6) 13:25-13:50 A System Design Method for Direct Sampling WLAN Receiver ED2011-124 MW2011-147 Noriaki Saito, Yohei Morishita, Tadashi Morita (Panasonic)
  13:50-14:05 Break ( 15 min. )
(7) 14:05-14:30 Photon-recycling GaN p+n Diodes ED2011-125 MW2011-148 Kazuhiro Mochizuki (Hitachi, Ltd.), Kazuki Nomoto, Yoshitomo Hatakeyama, Hideo Katayose (Hosei Univ.), Tomoyoshi Mishima, Naoki Kaneda, Tadayoshi Tsuchiya (Hitachi Cable, Ltd.), Akihisa Terano, Takashi Ishigaki, Tomonobu Tsuchiya, Ryuta Tsuchiya (Hitachi, Ltd.), Tohru Nakamura (Hosei Univ.)
(8) 14:30-14:55 Modeling and predistortion for harmonic distortion in wideband amplifier Nhu Quyen Duong, Kiyomichi Araki (Tokyo Tech), Takayuki Yamada, Takana Kaho, Yo Yamaguchi (NTT)
(9) 14:55-15:20 Distortion Compensation of Class-E Power Amplifier Modulating Envelope Pulse Width for Quadrature Amplitude Modulation Signal ED2011-126 MW2011-149 Shota Fujioka, Yohtaro Umeda (Tokyo Univ. of Sience), Osamu Takyu (Shinshu Univ.)
(10) 15:20-15:45 Multi-stage Balanced RF Rectifier Circuit ED2011-127 MW2011-150 Kota Yamada, Takashi Arakawa, Masamune Takeda, Jun Uemura (Maspro), Kunio Sakakibara, Nobuyoshi Kikuma (Nagoya Inst. of Tech.), Takashi Ohira (Toyohashi Univ. Tech.)
  15:45-16:00 Break ( 15 min. )
(11) 16:00-16:50 [Special Talk]
Simply Structured Spaces and Vector Potentials ED2011-128 MW2011-151
Kaneyuki Kurokawa (Former Fujitsu Lab.)
Thu, Jan 12 AM 
10:10 - 16:50
(12) 10:10-10:35 Study of source charging time in InGaAs MOSFET ED2011-129 MW2011-152 Yasuyuki Miyamoto, Masayuki Yamada, Ken Uchida (Tokyo Tech)
(13) 10:35-11:00 Low-Turn-on-Voltage Double Heterojunction Bipolar Transistors with a Narrow-Band-Gap InGaAsSb Base Grown by Metalorganic Chemical Vapor Deposition ED2011-130 MW2011-153 Takuya Hoshi, Hiroki Sugiyama, Haruki Yokoyama, Kenji Kurishima, Minoru Ida (NTT)
(14) 11:00-11:25 A 60-GS/s Digital-to-Analog Converter using 0.5-um InP HBTs for Optical Communication Systems ED2011-131 MW2011-154 Munehiko Nagatani, Hideyuki Nosaka, Kimikazu Sano, Koichi Murata, Kenji Kurishima, Minoru Ida (NTT)
(15) 11:25-11:50 Components in 0.5-um-emitter-width InP-HBT Technology for High-Speed and Low-Power Applications ED2011-132 MW2011-155 Yves Bouvier, Munehiko Nagatani, Kimikazu Sano, Koichi Murata, Kenji Kurishima, Minoru Ida (NTT)
  11:50-12:50 Lunch Break ( 60 min. )
(16) 12:50-13:15 Analusis of Buffer-Impurity and Field-Plate Effects on Breakdown Performance in Small-Sized AlGaN/GaN HEMTs ED2011-133 MW2011-156 Hiraku Onodera, Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.)
(17) 13:15-13:40 Step-stress Reliability Studies on AlGaN/GaN HEMTs on Silicon with Buffer Thickness Dependence ED2011-134 MW2011-157 Amalraj Frank Wilson, Akio Wakejima, Takashi Egawa (Nagoya Inst. of Tech.)
(18) 13:40-14:05 High temperature device characteristics of AlGaN-Channel HEMTs ED2011-135 MW2011-158 Maiko Hatano, Jyun Yamazaki (Fukui Univ.), Norimasa Yafune (Sharp), Hirokuni Tokuda (Fukui Univ.), Yoshiyuki Yamamoto, Shin Hashimoto, Katsushi Akita (Sumitomo Electric Industries), Masaaki Kuzuhara (Fukui Univ.)
(19) 14:05-14:30 Effect of surface treatments on insulated gates fabricated on GaN and AlGaN/GaN structures ED2011-136 MW2011-159 Yujin Hori, Sungsik Kim (Hokkaido Univ.), Tamotsu Hashizume (Hokkaido Univ./JST)
(20) 14:30-14:55 High current and high voltage GaN-based multi-junction diode with p-type barrier controlling layer ED2011-137 MW2011-160 Daisuke Shibata, Kazuhiro Kaibara, Tomohiro Murata, Yasuhiro Yamada, Tatsuo Morita, Yoshiharu Anda, Masahiro Ishida, Hidetoshi Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic)
  14:55-15:10 Break ( 15 min. )
(21) 15:10-15:35 Ruggedness and Reliability of GaN HEMT for L/S-band High Power Applications ED2011-138 MW2011-161 Ken Kikuchi, Fumikazu Yamaki, Kazutaka Inoue (SEI), Masahiro Nishi, Hitoshi Haematsu, Norihiko Ui, Kaname Ebihara, Atsushi Nitta (SEDI), Seigo Sano (SEI)
(22) 15:35-16:00 Novel Field Plate Design for High-Power and High-Gain AlGaN/GaN HFETs on Si Substrates ED2011-139 MW2011-162 Satoshi Nakazawa, Naohiro Tsurumi, Masaaki Nishijima, Yoshiharu Anda, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic)
(23) 16:00-16:25 X-band High Gain and High Efficiency Compact Power Amplifiers with 30W Output Power ED2011-140 MW2011-163 Osamu Moriya, Kenta Kuroda, Keiichi Matsushita, Tomohide Soejima, Kazutaka Takagi, Shinji Takatsuka (TOSHIBA)
(24) 16:25-16:50 High Power X-band 200W AlGaN/GaN HEMT ED2011-141 MW2011-164 Makoto Nishihara, Takashi Yamamoto (SEDI), Shinya Mizuno, Seigo Sano (SEI), Yuichi Hasegawa (SEDI)

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Kunio Tsuda(Toshiba)
TEL : +81-44-549-2142、FAX : +81-44-520-1501
E- : oba
Michihiko Suhara (Tokyo Metropolitan Univ.)
TEL : +81-42-677-2765 Fax : +81-42-677-2756
E- : t
Tetsuzo Ueda(Panasonic)
TEL:+81-75-956-8273、FAX:+81-75-956-9110
E-zopac
Seiya Kasai(Hokkaido Univ.)
Tel: 011-706-6509 Fax: 011-716-6004
E-irciqei 
MW Technical Committee on Microwaves (MW)   [Latest Schedule]
Contact Address Kei Satoh (NTT DOCOMO,INC.)
TEL:+81-46-840-6230
FAX:+81-46-840-3789
E-:i
or Kenjiro Nishikawa (Kagoshima Univ.)
E-:siieee 


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