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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Takahiro Shinada (Tohoku Univ.)
Vice Chair Hiroshige Hirano (TowerJazz Panasonic)
Secretary Hiroya Ikeda (Shizuoka Univ.), Tetsu Morooka (TOSHIBA MEMORY)
Assistant Takahiro Mori (AIST), Nobuaki Kobayashi (Nihon Univ.)

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Conference Date Wed, Oct 23, 2019 13:30 - 17:10
Thu, Oct 24, 2019 09:30 - 16:40
Topics Process Science and New Process Technology 
Conference Place Fluctuation FreeFacility、Niche, Tohoku University 
Address 6-6-10, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
Transportation Guide http://www.fff.niche.tohoku.ac.jp/index_e.html
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Registration Fee This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on SDM.

Wed, Oct 23 PM 
13:30 - 17:10
(1) 13:30-14:20 [Invited Talk]
Atomic layer etching process utilizing plasma SDM2019-53
Sho Kumakura, Yoshihide Kihara, Masanobu Honda (Tokyo Electron Miyagi)
(2) 14:20-14:50 A study on ferroelectric non-doped HfO2 directly deposited on Si(100) substrate by introducing Hf interlayer SDM2019-54 Masakazu Kataoka, Masaki Hayashi, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech)
(3) 14:50-15:20 The investigation of interface property of N-doped LaB6/SiO2/Si(100) stack structure by increasing deposition temperature SDM2019-55 Kyung Eun Park, Hideki Kamata, Shun-ichiro Ohmi (Tokyo Tech)
  15:20-15:40 Break ( 20 min. )
(4) 15:40-16:10 Investigation of ferroelectric undoped HfO2 formation on Si(100) utilizing post metallization annealing for nonvolatile memory application SDM2019-56 Min Gee Kim, Masakazu Kataoka, Masaki Hayashi, Rengie Mark D. Mailig, Shun-ichiro Ohmi (Tokyo Tech.)
(5) 16:10-16:40 A study on the EOT scaling of the Hf-based MONOS non-volatile memory characteristics utilizing HfON tunneling layer SDM2019-57 Jooyoung Pyo, Yusuke Horiuchi, Shun-ichiro Ohmi (Tokyo Tech.)
(6) 16:40-17:10 Investigation of the multi-level operation of Hf-based MONOS nonvolatile memory utilizing multi charge trapping layers SDM2019-58 Yusuke Horiuchi, Jooyoung Pyo, Shun-ichiro Ohmi (Tokyo Tech.)
Thu, Oct 24 AM 
09:30 - 16:40
(7) 09:30-10:20 [Invited Talk]
NiAl as Cu alternative for ultrasmall feature sizes SDM2019-59
Linghan Chen, Junichi Koike, Daisuke Ando, Yuji Sutou (Tohoku Univ.)
(8) 10:20-10:50 [Invited Lecture]
Effect of an oxide layer at Co/Si interface on Schottky barrier height and contact resistivity SDM2019-60
Koichi Kido, Ken Sato, Rihito Kuroda, Daisuke Ando, Yuji Suto, Junichi Koike (Tohoku Univ.)
(9) 10:50-11:20 Low temperature formation of PdErSi/Si(100) for Schottky barrier source and drain MOSFET applications SDM2019-61 Rengie Mark D. Mailig, Yuichiro Aruga, Min Gee Kim, Shun-ichiro Ohmi (Tokyo Tech)
  11:20-13:00 Lunch Break ( 100 min. )
(10) 13:00-13:50 [Invited Talk]
Random nanostructure formation and electric readout for nano-artifact metrics SDM2019-62
Seiya Kasai, Renpeng Lu, Katsumi Shimizu, Xiang Yin (Hokkaido Univ.), Yosuke Ueba, Mikio Ishikawa, Mitsuru Kitamura (DNP), Morihisa Hoga (AIST), Makoto Naruse (Univ. of Tokyo), Tsutomu Matsumoto (YNU)
(11) 13:50-14:20 The process technology of new piezoelectric materials BiFeO3 and dependence of substrate SDM2019-63 Fuminobu Imaizumi, Rikuto Nakada (NIT, Oyama College)
(12) 14:20-14:50 SDM2019-64
  14:50-15:10 Break ( 20 min. )
(13) 15:10-15:40 Resistance Measurement Platform for Statistical Evaluation of Emerging Memory Materials with High Accuracy SDM2019-65 Takeru Maeda, Yuya Omura, Rihito Kuroda, Akinobu Teramoto, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.)
(14) 15:40-16:10 Gas concentration distribution measurement in semiconductor process chamber using a high SNR CMOS absorption image sensor SDM2019-66 Keigo Takahashi, Yhang Ricardo Sipauba Carvalho da Silva, Rihito Kuroda, Yasuyuki Fujihara, Maasa Murata, Hidekazu Ishii, Tatsuo Morimoto, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa (Tohoku Univ.)
(15) 16:10-16:40 Observation of Fluctuation of Magnetron Sputtering Plasmas Using High-speed Video Camera SDM2019-67 Shintaro Yamazaki, Tetsuya Goto, Manabu Suzuki, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.)

Announcement for Speakers
General TalkEach speech will have 25 minutes for presentation and 5 minutes for discussion.
Invited LectureEach speech will have 25 minutes for presentation and 5 minutes for discussion.
Invited TalkEach speech will have 40 minutes for presentation and 10 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Tetsu Morooka(Toshiba Memory Corp.)
Tel 059-390-7451 Fax 059-361-2739
E-: ba 


Last modified: 2019-08-26 18:34:58


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