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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Tetsuro Endo (Tohoku Univ.)
Vice Chair Yasuo Nara (Fujitsu Microelectronics)
Secretary Yukinori Ono (NTT), Katsunori Onishi (Kyushu Inst. of Tech.)
Assistant Shintaro Nomura (Univ. of Tsukuba)

Conference Date Thu, Nov 11, 2010 10:00 - 15:30
Fri, Nov 12, 2010 10:30 - 15:55
Topics Process, Device, Circuit Simulations, etc 
Conference Place  
Sponsors This conference is co-sponsored by The Japan Society of Applied Physics.

Thu, Nov 11 AM 
10:00 - 11:45
  10:00-10:05 Introductory talk ( 5 min. )
(1) 10:05-10:55 [Invited Talk]
2010 SISPAD Review
Yoshinari Kamakura (Osaka Univ.)
(2) 10:55-11:45 [Invited Talk]
Latest Trends in Simulation and Characterization of Statistical CMOS Variability and Reliability
-- Review of 2010 SISPAD Workshop1 --
Shuichi Toriyama (Toshiba Corp.)
  11:45-13:00 Lunch Break ( 75 min. )
Thu, Nov 11 PM 
13:00 - 15:30
(3) 13:00-13:50 [Invited Talk]
Trends of Magnetic Memory; Multi-Level-Cell Spin Transfer Torque Memory
Takashi Ishigaki, Takayuki Kawahara, Riichiro Takemura, Kazuo Ono, Kenchi Ito (Hitachi), Hideo Ohno (Tohoku U.)
(4) 13:50-14:40 [Invited Talk]
Statistical Evaluation of Random Telegraph Sygnal in MOSFET
Akinobu Teramoto, Kenichi Abe, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
(5) 14:40-15:30 [Invited Talk]
Comprehensive understanding of oxygen vacancy induced effective work function modulation in high-k/metal gate stacks
Takuji Hosoi, Masayuki Saeki, Yuki Kita, Yudai Oku, Hiroaki Arimura, Naomu Kitano (Osaka Univ.), Kenji Shiraishi, Keisaku Yamada (Univ. Tsukuba), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.)
Fri, Nov 12 AM 
10:30 - 11:45
(6) 10:30-10:55 High Transient Performance of Low-Dropout(LDO) regulator Fouzhiwei Tong, Cong-Kha Pham (UEC)
(7) 10:55-11:20 Topography simulation of BiCS memory hole etching and modeling of SiO2 and Si etching Takashi Ichikawa, Daigo Ichinose, Kenji Kawabata, Naoki Tamaoki (Toshiba)
(8) 11:20-11:45 Development of Automated System of Ultra-Accelerated Quantum Chemical Molecular Dynamics Method and Oxidation Simulation of Silicon Surface Hideyuki Tsuboi, Kenji Inaba, Mariko Ise, Yukie Hayashi, Yuka Suzuki, Hiromi Sato, Yukiko Obara, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku)
  11:45-13:00 Lunch Break ( 75 min. )
Fri, Nov 12 PM 
13:00 - 15:55
(9) 13:00-13:50 [Invited Talk]
An overview of VLSI design automation and its future prospective
Atsushi Takahashi (Osaka Univ.)
(10) 13:50-14:15 Modeling of Single-Event-Transient Pulse Generation in Inverter Cells Katsuhiko Tanaka, Hideyuki Nakamura, Taiki Uemura, Kan Takeuchi, Toshikazu Fukuda, Shigetaka Kumashiro, Tohru Mogami (MIRAI-Selete)
(11) 14:15-14:40 Modeling of 2D Bias Control in Overlap Region of High-Voltage MOSFETs Akihiro Tanaka, Yasunori Oritsuki, Hideyuki Kikuchihara, Masataka Miyake, Hans Juergen Mattausch, Mitiko Miura-Mattausch (Hiroshima Univ.), Yong Liu, Keith Green (TI)
(12) 14:40-15:05 Proposal of a Fitting Accuracy Metric suitable for Compact Model Qualification in all MOSFET Operation Region Hironori Sakamoto, Takahiro Iizuka (Renesas Electronics)
(13) 15:05-15:30 Strain Dependence of Hole Currents in Silicon Nanowire FETs Hideki Minari (Osaka Univ./JST-CREST), Tatsuro Kitayama, Masahiro Yamamoto (Osaka Univ.), Nobuya Mori (Osaka Univ./JST-CREST)
(14) 15:30-15:55 Design Feasibility of Si Wire GAA MOSFET
-- Analytical model for the design guideline --
Shunsuke Nakano, Yasuhisa Omura (Kansai Univ.)

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Hisahiro Ansai(Sony)
Tel 046-201-3297 Fax046-202-6572
E-: Hisahiro.Ansai@jp.sony.com 


Last modified: 2010-10-01 12:02:13


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