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Technical Committee on Electron Devices (ED) [schedule] [select]
Chair Michihiko Suhara (TMU)
Vice Chair Hiroki Fujishiro (Tokyo Univ. of Science)
Secretary Tatsuya Iwata (Toyama Pref. Univ.), Junji Kotani (Fjitsu Lab.)
Assistant Takuya Tsutsumi (NTT)

Technical Committee on Component Parts and Materials (CPM) [schedule] [select]
Chair Mayumi Takeyama (Kitami Inst. of Tech.)
Vice Chair Yuichi Nakamura (Toyohashi Univ. of Tech.)
Secretary Hideki Nakazawa (Hirosaki Univ.)
Assistant Yasuo Kimura (Tokyo Univ. of Tech.), Tomoaki Terasako (Ehime Univ.), Fumihiko Hirose (Yamagata Univ.)

Technical Committee on Lasers and Quantum Electronics (LQE) [schedule] [select]
Chair Hiroshi Yasaka (Tohoku Univ.)
Vice Chair Toshitada Umezawa (NICT)
Secretary Masaya Nagai (Osaka Univ.), Toru Segawa (NTT)
Assistant Kazuue Fujita (Hamamatsu), Nobuhiko Nishiyama (Tokyo Inst. of Tech.)

Conference Date Thu, Nov 26, 2020 10:00 - 16:10
Fri, Nov 27, 2020 10:30 - 16:20
Topics  
Conference Place Online 
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Registration Fee This workshop will be held as the IEICE workshop in fully electronic publishing. Registration fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the registration fee page. We request the registration fee or presentation fee to participants who will attend the workshop(s) on LQE, CPM, ED.

Thu, Nov 26 AM 
10:00 - 12:15
  10:00-10:05 Opening Address ( 5 min. )
(1) 10:05-10:25 Internal and External Quantum Efficiency in InGaN Quantum Wells Estimated by Simultaneous Photoacoustic and Photoluminescence Method and Integrating-Sphere Method ED2020-1 CPM2020-22 LQE2020-52 Keito Mori, Yuchi Takahashi, Shigeta Sakai, Yuya Morimoto, Atsushi A. Yamaguchi (KIT), Susumu Kusanagi, Yuya Kanitani, Yoshihiro Kudo, Shigetaka Tomiya (Sony)
(2) 10:25-10:45 Excitation wavelength dependence of temperature-induced photoluminescence quenching in InGaN quantum wells ED2020-2 CPM2020-23 LQE2020-53 Takumi Yamaguchi, Kyosuke Ariga, Keito Mori, Atushi A. Yamaguchi (KIT)
(3) 10:45-11:05 Calculation of carrier injection efficiency of AlGaN UVB Laser Diode ED2020-3 CPM2020-24 LQE2020-54 Kosuke Sato (Asahi-Kasei), Tomoya Omori, Kazuki Yamada, Shunya Tanaka, Sayaka Ishizuka, Shohei Teramura, Sho Iwayama, Motoaki Iwaya (Meijo Univ.), Hideto Miyake (Mie Univ.), Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.)
  11:05-11:15 Break ( 10 min. )
(4) 11:15-11:35 Study on p/n conductivity control of epitaxial AlInN films ED2020-4 CPM2020-25 LQE2020-55 Taiki Nakabayashi, Haruka Takada, Takashi Egawa, Makoto Miyoshi (NIT), Tetsuya Takeuchi (Meijo Univ.)
(5) 11:35-11:55 Examination of GaN-based photodetectors for optical wireless power transmission system ED2020-5 CPM2020-26 LQE2020-56 Kosuke Yamamoto, Pradip Dalapati, Takashi Egawa, Makoto Miyoshi (NIT)
(6) 11:55-12:15 265 nm AlGaN-based LEDs grown on AlN substrates studied by electroluminescence and photoluminescence methods ED2020-6 CPM2020-27 LQE2020-57 Ryota Ishii (Kyoto Univ.), Akira Yoshikawa, Kazuhiro Nagase (Asahi Kasei Corporation), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.)
Thu, Nov 26 PM 
13:30 - 16:10
(7) 13:30-13:50 High-breakdown-voltage AlGaN channel HFETs with selective-area regrowth ohmic contacts ED2020-7 CPM2020-28 LQE2020-58 Akiyoshi Inoue, Hiroki Harada, Mizuki Yamanaka, Takashi Egawa, Makoto Miyoshi (NIT)
(8) 13:50-14:10 Estimation of electrical properties of AlGaN/GaN MIS-HEMTs with SiO2/Al2O3 double insulators fabricated by ALD ED2020-8 CPM2020-29 LQE2020-59 Shunichi Yokoi, Toshiharu Kubo, Takashi Egawa (Nagoya Inst. of Tech.)
(9) 14:10-14:30 Mapping of Photoelectrochemical Etched Ni/GaN Schottky Contacts Using Scanning Internal Photoemission Microscopy
-- Comparison between n- and p-type GaN samples --
ED2020-9 CPM2020-30 LQE2020-60
Ryo Matsuda (Univ. of Fukui), Fumimasa Horikiri, Yoshinobu Narita, Takehiro Yoshida, Noboru Fukuhara (SCIOCS), Tomoyoshi Mishima (Hosei Univ.), Kenji Shiojima (Univ. of Fukui)
  14:30-14:40 Break ( 10 min. )
(10) 14:40-15:00 Two-Dimensional Characterization of n-GaN Schottky Contacts Printed by Using Ni Nanoink ED2020-10 CPM2020-31 LQE2020-61 Yuto Kawasumi, Yuto Yasui (Univ. of Fukui), Yukiyasu Kashiwagi, Toshiyuki Tamai (ORIST), Kenji Shiojima (Univ. of Fukui)
(11) 15:00-15:20 Growth of GaN on AlN template with atomic-level flatness for High Electron Mobility Transistor ED2020-11 CPM2020-32 LQE2020-62 Tatsuya Shirato, Kenjiro Uesugi, Shigeyuki Kuboya, Kanako Shojiki, Hideto Miyake (Mie Univ.)
  15:20-15:30 Break ( 10 min. )
(12) 15:30-15:50 Enhanced Breakdown Voltage in AlGaN/GaN HEMTs by Oxygen Plasma Treatment ED2020-12 CPM2020-33 LQE2020-63 Shunsuke Kamiya, Takashi Nishitani, Yu Matsuda, Nozomu Takano, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.)
(13) 15:50-16:10 GaN-based MIS-HEMTs with Mist Chemical Vapor Deposited Al2O3 ED2020-13 CPM2020-34 LQE2020-64 Low Rui Shan, Itsuki Nagase, Ali Baratov, Joel Tacla Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.), Zenji Yatabe, Kenta Naito, Motoyama Tomohiro, Yusui Nakamura (Kumamoto Univ.)
Fri, Nov 27 AM 
10:30 - 12:00
(14) 10:30-10:50 CBD Growth of MgZnO Nanorods and Their UV Light Detecting Application ED2020-14 CPM2020-35 LQE2020-65 Kohdai Hamamoto, Rikuto Kanamaru, Tomoaki Terasako (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Yutaka Furubayashi, Tetsuya Yamamoto (Kochi Univ. Technol.)
(15) 10:50-11:10 Study on Taste Evaluations of Japanese Sake using Bioelectrical Impedance Analysis. ED2020-15 CPM2020-36 LQE2020-66 Tomoya Kajiwara, Masaru Satou, Mayumi B. Takeyama (Kitami Inst. Technol)
  11:10-11:20 Break ( 10 min. )
(16) 11:20-11:40 Improved performance in GaN-based HEMTs with insulated gate structures ED2020-16 CPM2020-37 LQE2020-67 Ali Baratov, Takashi Ozawa, Shunpei Yamashita, Joel T. Asubar, Hirokuni Tokuda (Univ. of Fukui), Masaaki Kuzuhara (Kwansei Gakuin Univ.)
(17) 11:40-12:00 Time Response Characteristics of PEDOT:PSS/ZnO Nanorods/GZO Heterojunction UV Light Detectors ED2020-17 CPM2020-38 LQE2020-68 Kenta Yamada, Tomoaki Terasako (Ehime Univ.), Masakazu Yagi (Natl. Inst. Technol., Kagawa Coll.), Yutaka Furubayashi, Tetsuya Yamamoto (Kochi Univ. Technol.)
Fri, Nov 27 PM 
13:00 - 16:20
(18) 13:00-13:20 Optimization of lateral Mg activation in LEDs with GaN tunnel junctions ED2020-18 CPM2020-39 LQE2020-69 Mikiko Tasaki, Kazuki Kiyohara, Mahito Odawara, Taichi Ito, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Nagoya Univ.)
(19) 13:20-13:40 Study on crystal growth for nanowire-based light emitter including multiple-quantum-shell and tunnel junction ED2020-19 CPM2020-40 LQE2020-70 Yoshiya Miyamoto, Naoki Sone, Weifang Lu, Renji Okuda, Kazuma Ito, Koji Okuno, Kazuyoshi Iida, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ./Akasaki Research Center, Nagoya Univ.)
(20) 13:40-14:00 Optimization of the optical waveguide layer in AlGaN-based UV-B LD ED2020-20 CPM2020-41 LQE2020-71 Shunya Tanaka (Meijo Univ.), Kosuke Sato (Asahi-Kasei), Shinji Yasue, Yuya Ogino, Kazuki Yamada, Sayaka Ishizuka, Tomoya Omori, Shohei Teramura, Sho Iwayama (Meijo Univ.), Hideto Miyake (Mie Univ.), Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.)
  14:00-14:10 Break ( 10 min. )
(21) 14:10-14:30 First demonstration of InGaN QW tunable single-mode laser with periodically slotted structure ED2020-21 CPM2020-42 LQE2020-72 Masahiro Uemukai, Akihiro Higuchi, Tomoyuki Tanikawa, Ryuji Katayama (Osaka Univ.)
(22) 14:30-14:50 Crystalline Quality Improvement of Sputtered h-BN on Sapphire by High-Temperature Annealing ED2020-22 CPM2020-43 LQE2020-73 Ryoji Kataoka, Haruhiko Koizumi, Sho Iwayama, Hideto Miyake (Mie Univ.)
(23) 14:50-15:10 Internal quantum efficiency and excitonic stimulated emission properties of AlGaN-based UV-C multiple quantum wells ED2020-23 CPM2020-44 LQE2020-74 Hideaki Murotani (NIT, Tokuyama Coll.), Ryohei Tanabe, Keisuke Hisanaga, Akira Hamada, Kanta Beppu (Yamaguchi Univ.), Noritoshi Maeda, M. Ajmal Khan, Masafumi Jo, Hideki Hirayama (RIKEN), Yoichi Yamada (Yamaguchi Univ.)
  15:10-15:20 Break ( 10 min. )
(24) 15:20-15:40 MOVPE Growth on Low-dislocation-density AlN Templates with Nano-Striped Patterns and Crystalline-Quality Evaluations ED2020-24 CPM2020-45 LQE2020-75 Yukino Iba, Kanako Shojiki, Shigeyuki Kuboya, Kenjiro Uesugi, Shiyu Xiao, Hideto Miyake (Mie Univ.)
(25) 15:40-16:00 High-efficiency light emissions by plasmonic nano-cavities and applications to quantum devices ED2020-25 CPM2020-46 LQE2020-76 Koichi Okamoto, Seiya Kaito, Kohei Shimanoe, Fumiya Murao, Tetsuya Matsuyama, Kenji Wada (Osaka Pref. Univ.), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.)
(26) 16:00-16:20 Introduction of AlN/GaN Superlattice Layers for Growth of Strain-Relaxed AlGaN Films on AlN Templates ED2020-26 CPM2020-47 LQE2020-77 Takafumi Inamori, Shigeyuki Kuboya, Shoya Ishihara, Tatsuya Shirato, Kenjiro Uesugi, Kanako Shojiki, Hideto Miyake (Mie Univ.)
  16:20-16:25 Closing Address ( 5 min. )

Announcement for Speakers
General TalkEach speech will have 15 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Devices (ED)   [Latest Schedule]
Contact Address Toshiyuki Oishi(Saga Unv.)
TEL: +81-952-28-8642
E-: oi104cc-u
Tatsuya Iwata(Toyama Pref. Univ.)
TEL: +81-766-56-7500
E-: t_ipu- 
CPM Technical Committee on Component Parts and Materials (CPM)   [Latest Schedule]
Contact Address Hideki Nakazawa
TEL&FAX +81-172-39-3557
E-: h-u 
LQE Technical Committee on Lasers and Quantum Electronics (LQE)   [Latest Schedule]
Contact Address Masaya Nagai (Osaka Univ.)
TEL +81-6-6850-6507
E-: mimpes-u 
Announcement Homepage of LQE is http://www.ieice.org/~lqe/jpn/welcome.html


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