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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Yuzou Oono (Univ. of Tsukuba)
Vice Chair Tatsuya Kunikiyo (Renesas)
Secretary Rihito Kuroda (Tohoku Univ.)
Assistant Tadashi Yamaguchi (Renesas)

Conference Date Tue, Jan 27, 2015 10:00 - 17:10
Topics  
Conference Place  
Transportation Guide http://www.jspmi.or.jp/kaigishitsu/access.html
Sponsors This conference is co-sponsored by The Japan Society of Applied Physics.
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Tue, Jan 27 AM 
10:00 - 12:05
(1) 10:00-10:25 [Invited Talk]
Analytical formulation of interfacial SiO2scavenging in HfO2/SiO2/Si stacks SDM2014-135
Xiuyan Li, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, Akira Toriumi (Univ. of Tokyo)
(2) 10:25-10:50 [Invited Talk]
Dramatic Effects of Hydrogen-induced Out-diffusion of Oxygen from Ge Surface on Junction Leakage as well as Electron Mobility in n-channel Ge MOSFETs SDM2014-136
ChoongHyun Lee, Tomonori Nishimura, Cimang Lu, Shoichi Kabuyanagi, Akira Toriumi (Univ. of Tokyo)
(3) 10:50-11:15 [Invited Talk]
High Ion/Ioff Ge-source Ultrathin Body Strained-SOI Tunnel FETs
-- Impact of Channel Strain, MOS Interfaces and Back Gate on the Electrical Properties --
SDM2014-137
Minsoo Kim, Yuki K. Wakabayashi, Ryosho Nakane, Masafumi Yokoyama, Mitsuru Takenaka, Shinichi Takagi (The Univ. of Tokyo)
(4) 11:15-11:40 [Invited Talk]
High-performance tri-gate poly-Ge Junction-less p- and n-MOSFETs Fabricated by Flash Lamp Annealing Process SDM2014-138
Koji Usuda, Yoshiki Kamata, Yuuichi Kamimuta, Takahiro Mori, Masahiro Koike, Tsutomu Tezuka (AIST)
(5) 11:40-12:05 [Invited Talk]
Coupled Monte Carlo Simulation of Transient Electron-Phonon Transport in Small FETs SDM2014-139
Yoshinari Kamakura, Indra Nur Adisusilo, Kentaro Kukita, Go Wakimura (Osaka Univ.), Shunsuke Koba, Hideaki Tsuchiya (Kobe Univ.), Nobuya Mori (Osaka Univ.)
  12:05-13:30 Lunch Break ( 85 min. )
Tue, Jan 27 PM 
13:30 - 17:10
(6) 13:30-14:00  
(7) 14:00-14:25 [Invited Talk]
High-precision Wafer-level Cu-Cu Bonding for 3DICs SDM2014-140
Masashi Okada, Isao Sugaya, Hajime Mitsuishi, Hidehiro Maeda, Shigeto Izumi, Hosei Nakahira, Kazuya Okamoto (Nikon)
(8) 14:25-14:50 [Invited Talk]
Three-Dimensional Integrated CMOS Image Sensors with Pixel-Parallel A/D Converters Fabricated by Direct Bonding of SOI Layers SDM2014-141
Masahide Goto, Kei Hagiwara, Yoshinori Iguchi, Hiroshi Ohtake (NHK), Takuya Saraya, Masaharu Kobayashi, Eiji Higurashi, Hiroshi Toshiyoshi, Toshiro Hiramoto (The Univ. of Tokyo)
(9) 14:50-15:15 [Invited Talk]
Low power and high memory density STT-MRAM for embedded cache memory using advanced perpendicular MTJ integrations and asymmetric compensation techniques SDM2014-142
Kazutaka Ikegami, Hiroki Noguchi, Chikayoshi Kamata, Minoru Amano, Keiko Abe, Keiichi Kushida, Takao Ochiai, Naoharu Shimomura, Shogo Itai, Daisuke Saida, Chika Tanaka, Atsushi Kawasumi, Hiroyuki Hara, Junichi Ito, Shinobu Fujita (Toshiba)
  15:15-15:30 Break ( 15 min. )
(10) 15:30-15:55 [Invited Talk]
Accurate Prediction of PBTI Lifetime in N-type Fin-Channel High-k Tunnel FETs SDM2014-143
Wataru Mizubayashi, Takahiro Mori, Koichi Fukuda, Yongxun Liu, Takashi Matsukawa, Yuki Ishikawa, Kazuhiko Endo, Shinichi Ohuchi, Junichi Tsukada, Hiromi Yamauchi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Meishoku Masahara (AIST)
(11) 15:55-16:20 [Invited Talk]
16 nm FinFET High-k/Metal-gate 256-kbit 6T SRAM Macros with Wordline Overdriven Assist SDM2014-144
Makoto Yabuuchi, Masao Morimoto, Yasumasa Tsukamoto, Shinji Tanaka, Koji Tanaka, Miki Tanaka, Koji Nii (Renesas)
(12) 16:20-16:45 [Invited Talk]
Scaling Breakthrough for Analog/Digital Circuits by Suppressing Variability and Low-Frequency Noise for FinFETs by Amorphous Metal Gate Technology SDM2014-145
Takashi Matsukawa, Koichi Fukuda, Yongxun Liu, Junichi Tsukada, Hiromi Yamauchi, Yuki Ishikawa, Kazuhiko Endo, Shinichi O'uchi, Shinji Migita, Wataru Mizubayashi, Yukinori Morita, Hiroyuki Ota, Meishoku Masahara (AIST)
(13) 16:45-17:10 [Invited Talk]
Experimental Realization of Complementary p- and n- Tunnel FinFETs with Subthreshold Slopes of Less than 60 mV/decade and Very Low (pA/um) Off-Current on a Si CMOS Platform SDM2014-146
Yukinori Morita, Takahiro Mori, Koichi Fukuda, Wataru Mizubayashi, Shinji Migita, Takashi Matsukawa, Kazuhiko Endo, Shinichi O'uchi, Yongxun Liu, Meishoku Masahara, Hiroyuki Ota (AIST)

Announcement for Speakers
Invited TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E-: fffe 


Last modified: 2014-11-19 19:51:31


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