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Technical Committee on Electron Device (ED) [schedule] [select]
Chair Takao Waho
Vice Chair Masaaki Kuzuhara
Secretary Tsuyoshi Tanaka, Manabu Arai
Assistant Shin-ichiro Takatani

Technical Committee on Microwaves (MW) [schedule] [select]
Chair Kiyomichi Araki
Vice Chair Osamu Hashimoto
Secretary Ichihiko Toyoda, Ken-ichi Maruhashi
Assistant Tadashi Kawai, Koji Wada

Conference Date Wed, Jan 18, 2006 13:30 - 16:35
Thu, Jan 19, 2006 10:20 - 16:00
Fri, Jan 20, 2006 09:00 - 18:10
Topics Compound Semiconductor IC and High-Speed, High-Frequency Devices 
Conference Place  

Wed, Jan 18 PM 
13:30 - 16:35
(1) 13:30-13:55 A Low-Phase-Noise 76-GHz Planar Gunn VCO Using Flip-Chip Bonding Technology Takashi Yoshida, Yoshimichi Fukasawa, Tadayoshi Deguchi, Kiyoshi Kawaguchi, Takahiro Sugiyama, Atsushi Nakagawa (New Japan Radio)
(2) 13:55-14:20 Over 40-Gbit/s Digital Circuits Using InP HEMT Technology Toshihide Suzuki, Yoichi Kawano, Yasuhiro Nakasha, Kozo Makiyama, Tsuyoshi Takahashi, Naoki Hara, Tatsuya Hirose (Fujitsu Labs.)
(3) 14:20-14:45 Up to 80-Gbit/s Operations of 1:4 Demultiplexer IC with InP HBTs Kimikazu Sano, Hiroyuki Fukuyama, Koichi Murata, Kenji Kurishima, Norihide Kashio, Takatomo Enoki, Hirohiko Sugahara (NTT PH Labo.)
(4) 14:45-15:10 120-GHz Band 10-Gbit/s Millimeter-wave MMIC Waveguide Modules for Wireless Access System Toshihiko Kosugi (NTT Photonics Lab.), Akihiko Hirata (NTT Microsystem Integration Lab.), Masami Tokumitsu, Hirohiko Sugahara (NTT Photonics Lab.)
  15:10-15:20 Break ( 10 min. )
(5) 15:20-15:45 Increase of colllector current in hot eletron transistors controlled by gate bias Issei Kashima, Akira Suwa (Tokyo Tech), Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Tech JST-CREST)
(6) 15:45-16:10 Prediction of High-Frequency Characteristics for Hot-Electron Transistors Controlled by Gate Bias Nobuya Machida, Mitsuhiko Igarashi, Tomohiro Yamada, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Tech.)
(7) 16:10-16:35 Effects of surface recombination on dc characteristics of InGaP/GaAs heterojunction bipolar transistors(HBT’s) Airi Kurokawa, Zhi Jin, Hiroshi Ono, Kazuo Uchida, Shinji Nozaki, Hiroshi Morisaki (UEC)
Thu, Jan 19 AM 
10:20 - 16:00
(8) 10:20-10:45 Analysis of Slow Current Transients and Current Collapse in GaN FETs Hiroki Takayanagi, Keiichi Itagaki, Hiroyuki Nakano, Kazushige Horio (Shibaura Inst. Tech.)
(9) 10:45-11:10 Analysis of Gate-Lag Phenomena in Unpassivarwd AlGaN/GaN HEMTs Alberto F. Basile, Junji Kotani, Tamotsu Hashizume (Hokkaido Univ)
(10) 11:10-11:35 C-V characterization of GaN-based MIS structures at high temperatures Hiroki Kato, Marcin Miczek, Tamotsu Hashizume (Hokkaido Univ.)
(11) 11:35-12:00 Investigation of Bandgap Bowing Parameter of Lattice-Matched Wurtzite InAlGaN Quarternary Alloy Toshiyuki Takizawa, Satoshi Nakazawa, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric), Takashi Egawa (Nagoya Inst. Tech.)
  12:00-13:20 Lunch Break ( 80 min. )
(12) 13:20-13:45 AlGaN/GaN HFETs with a low-temperature GaN cap layer Tadayoshi Deguchi, Eiji Waki, Satoru Ono, Meiichi Yamashita, Atsushi Kamada, Atsushi Nakagawa (New Japan Radio), Hiroyasu Ishikawa, Takashi Egawa (Nagoya Institute of Technology)
(13) 13:45-14:10 AlGaN/GaN-HEMTs with Recessed Ohmic Electrodes on Si Juro Mita, Katsuaki Kaifu, Masanori Itoh, Yoshiaki Sano (Oki), Hiroyasu Ishikawa, Takashi Egawa (Nitech)
(14) 14:10-14:35 Normally-off Operation of AlGaN/GaN Heterojunction Field Effect Transistors on Non-polar (11-20) plane Masayuki Kuroda, Hidetoshi Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric)
  14:35-14:45 Break ( 10 min. )
(15) 14:45-15:10 0.15-mm-dual-gate AlGaN/GaN HEMT mixers Kenji Shiojima, Takashi Makimura, Toshihiko Kosugi, Tetsuya Suemitsu, Naoteru Shigekawa, Masanobu Hiroki, Haruki Yokoyama (NTT)
(16) 15:10-15:35 Highly Uniform GaN-HEMT on 3-inch Conductive SiC Substrate for Wireless Basestation Applications Toshihide Kikkawa, Kenji Imanishi, Masahito Kanamura, Kazukiyo Joshin (Fujitsu Labs.)
(17) 15:35-16:00 High Power AlGaN/GaN MIS-HEMT Masahito Kanamura, Toshihide Kikkawa, Taisuke Iwai, Kenji Imanishi, Tokuro Kubo, Kazukiyo Joshin (Fujitsu Labs. Ltd.)
Fri, Jan 20 AM 
09:00 - 18:10
(18) 09:00-09:25 -
-- - --
Koji Wada, Shin Matsumoto, Takashi Iwasaki (UEC)
(19) 09:25-09:50 -
-- - --
Kosei Tanii (UEC), Futoshi Nishimura, Kouji Sasabe, Yoshiaki Ueno (Matsushita Electric Works), Koji Wada, Takashi Iwasaki (UEC)
(20) 09:50-10:15 A Novel Bandpass Filter with Sharp Attenuations and Wide Stopbands Developed Through the Combined Use of Composite Resonators and Stepped Impedance Resonators Hitoshi Miki, Zhewang Ma, Yoshio Kobayashi (Saitama Univ.), Tetsuo Anada (Kanagawa Univ.), Gen Hagiwara (Link Circuit Inc.)
(21) 10:15-10:40 A Novel Dual-Band Bandpass Filter Using Composite Resonators Zhewang Ma, Taichi Shimizu, Hitoshi Miki, Yoshio Kobayashi (Saitama Univ.), Tetsuo Anada (Kanagawa Univ.), Gen Hagiwara (Link Circuit Inc.)
  10:40-10:50 Break ( 10 min. )
(22) 10:50-11:15 Left-handed line constructed by using grounded coplanar strip Rei Goto, Hiroyuki Deguchi, Mikio Tsuji, Hiroshi Shigesawa (Doshisha Univ.)
(23) 11:15-11:40 90 Degree Hybrid with Insensitivity to Misalignment and Thickness Variation of Multi-layered LTCC Substrate Takeshi Yuasa, Yukihiro Tahara, Hideyuki Oh-hashi (Mitsubishi Electric Co.)
(24) 11:40-12:05 A Frequency-Tunable Amplifier with a T-Shaped Tunable Adimittance-Inverter Hiromitsu Uchida, Kentaro Ogura, Naofumi Yoneda, Yoshihiko Konishi, Shigeru Makino (Mitsubishi Electric Corp.)
  12:05-13:35 Lunch Break ( 90 min. )
(25) 13:35-14:00 Highly Linear VCO with Voltage Converter Hiroyuki Mizutani, Masaomi Tsuru, Takayuki Matsuzuka, Kenichiro Choumei, Kenji Kawakami, Moriyasu Miyazaki (Mitsubishi Electric)
(26) 14:00-14:25 - Futoshi Kuroki, Shohei Ishikawa (KNCT), Tsukasa Yoneyama (Tohoku Inst. of Tech.)
(27) 14:25-14:50 - Futoshi Kuroki, Yusuke Murata, Ryo-ta Masumoto (KNCT), Tsukasa Yoneyama (Tohoku Inst. of Tech.)
(28) 14:50-15:15 - Futoshi Kuroki, Hiroshi Ohta (KNCT), -, - (Sharp)
  15:15-15:25 Break ( 10 min. )
(29) 15:25-15:50 Study on EM Environment at ETC Tollgate with Multiple Lane Hirotomo Ichinose, Satoshi Ozaki, Osamu Hashimoto (Aoyama Gakuin Univ.), (Central Nippon Expressway)
(30) 15:50-16:15 Examinations of the propagation characteristics on a rectangle wave using FDTD, CIP and R-CIP methods Youichi Kakuta, Shinya Watanabe, Osamu Hashimoto (AGU)
(31) 16:15-16:40 Analytical and experimental examinations of temeprature distribution of λ/4 type wave absorber using resistive film under high power injection Shinya Watanabe, Kota Saito, Akitoshi Taniguti, Osamu Hashimoto (AGU), Toshifumi Saito (TDK)
  16:40-16:50 Break ( 10 min. )
(32) 16:50-18:10 [Special Talk]
A Report on the 35th European Microwave Conference
Tetsuo Anada (Kanagawa University), Hiroshi Kubo (Yamaguchi University), Futoshi Kuroki (Kure National College of Technology), Hiroyuki Deguchi (Doshisha University), Hiromitsu Uchida, Tamotsu Nishino, Koji Yamanaka (Mitsubishi), (Eudyna), Munenari Kawashima (NTT)

Announcement for Speakers
General Talk (25分)Each speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Tsuyoshi Tanaka(Matsushita)
TEL: 075-956-9083, FAX: 075-956-9110
E-: erlci
Manabu Arai(New JRC)
TEL: 049-278-1477、FAX: 049-278-1419
E-: injr
Shinichiro Takatani(Hitachi)
TEL: 049-278-1477、FAX: 049-278-1419
E-: injr 
MW Technical Committee on Microwaves (MW)   [Latest Schedule]
Contact Address Koji Wada(UEC)
TEL:0424-43-5212,FAX:0424-43-5212
E-:eec 


Last modified: 2006-01-13 05:35:15


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