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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Yuzou Oono (Univ. of Tsukuba)
Vice Chair Tatsuya Kunikiyo (Renesas)
Secretary Rihito Kuroda (Tohoku Univ.)
Assistant Tadashi Yamaguchi (Renesas)

{INFOMESITEM}
Conference Date Thu, Oct 29, 2015 14:00 - 17:20
Fri, Oct 30, 2015 09:30 - 16:00
Topics Process Science and New Process Technology 
Conference Place Niche, Tohoku Univ. 
Address 6-6-10, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
Contact
Person
Rihito Kuroda, Tohoku University
+81227954833
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Thu, Oct 29 PM 
14:00 - 17:20
(1) 14:00-14:50 [Invited Talk]
Current situation and challenging for ion implantation technology SDM2015-71
Yoshiki Nakashima, Nariaki Hamamoto, Shigeki Sakai, Hiroshi Onoda (NIC)
(2) 14:50-15:20 A study on Si surface flattening process by annealing Ar/H2ambient SDM2015-72 Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech)
(3) 15:20-15:50 Ultra-Low Temperature Flattening Technique of Silicon Surface Using Xe/H2 Plasma SDM2015-73 Tomoyuki Suwa, Akinobu Teramoto, Tetsuya Goto, Masaki Hirayama, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
  15:50-16:00 Break ( 10 min. )
(4) 16:00-16:30 Electrical Properties of MOSFETs Introducing Atomically Flat Gate Insulator/Silicon Interface SDM2015-74 Tetsuya Goto, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa (Tohoku Univ.), Yutaka Kamata, Yuki Kumagai, Katsuhiko Shibusawa (LAPIS Semi. Miyagi)
(5) 16:30-17:20 [Invited Talk]
Low-power and high-speed FPGA by adjacent integration of flash memory and CMOS logic SDM2015-75
Koichiro Zaitsu, Kosuke Tatsumura, Mari Matsumoto, Masato Oda, Shinichi Yasuda (Toshiba)
Thu, Oct 29 PM 
17:20 - 17:20
  17:50-19:30 Banquet ( 100 min. )
Fri, Oct 30 AM 
09:30 - 11:20
(6) 09:30-10:20 [Invited Talk]
Radial line slot antenna microwave plasma source mediated conformal doping of non-planar silicon structures SDM2015-76
Hirokazu Ueda (TEL TDC), Peter Ventzek (TEL America), Masahiro Oka, Yuuki Kobayashi, Yasuhiro Sugimoto, Satoru Kawakami (TEL TDC)
(7) 10:20-10:50 A Device Simulation Study on Tunneling and Diffusion Current Hybrid MOSFET SDM2015-77 Kiichi Furukawa, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Keiichi Hashimoto, Takashi Kojiri, Shigetoshi Sugawa (Tohoku Univ.)
(8) 10:50-11:20 Ferroelectric BiFeO3 Formation with Oxigen Radical Treatment SDM2015-78 Fuminobu Imaizumi, Tetsuya Goto, Akinobu Teramoto, Shigetoshi Sugawa (Tohoku Univ.)
  11:20-13:00 Lunch Break ( 100 min. )
Fri, Oct 30 PM 
13:00 - 16:00
(9) 13:00-13:50 [Invited Talk]
Materials and process technologies for large-area sheet-type display SDM2015-79
Yoshihide Fujisaki (NHK)
(10) 13:50-14:20 A Study on the Device Characteristics of Pentacene-based OFET with HfO2 Gate Insulator SDM2015-80 Yasutaka Maeda, Yeyuan Liu, Shun-ichiro Ohmi (Tokyo Tech.)
  14:20-14:30 Break ( 10 min. )
(11) 14:30-15:00 Low Work Function LaB6 Thin Films Prepared by Nitrogen Doped LaB6 Target Sputtering SDM2015-81 Hidekazu Ishii (Tohoku Univ), Takahashi Kentarou (Sumitomo Osaka Cement), Tetsuya Goto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ)
(12) 15:00-15:30 Investigation of stacked HfN gate insulator formed by ECR plasma sputtering SDM2015-82 Nithi Atthi, Shun-ichiro Ohmi (Tokyo Tech)
(13) 15:30-16:00 Study of process temperature of Al2O3 atomic layer deposition using high accuracy process gasses supply controller SDM2015-83 Hisaya Sugita, Yasumasa Koda, Tomoyuki Suwa, Rihito Kuroda, Tetsuya Goto, Hidekazu Ishii (Tohoku Univ.), Satoru Yamashita (Fujikin), Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)

Announcement for Speakers
General TalkEach speech will have 25 minutes for presentation and 5 minutes for discussion.
Invited TalkEach speech will have 40 minutes for presentation and 10 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4835
E-: e3 


Last modified: 2015-08-27 17:09:23


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