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Technical Committee on Electron Device (ED) [schedule] [select]
Chair Naoki Hara (Fujitsu Labs.)
Vice Chair Koichi Maezawa (Univ. of Toyama)
Secretary Tetsuzo Ueda (Panasonic), Seiya Kasai (Hokkaido Univ.)
Assistant Koji Matsunaga (NEC), Toshikazu Suzuki (JAIST)

Conference Date Thu, Aug 8, 2013 14:00 - 17:35
Fri, Aug 9, 2013 09:00 - 11:45
Topics  
Conference Place Faculty of Engineering, University of Toyama 
Address 3190 Gofuku, Toyama-shi, Toyama 930-8555, Japan
Transportation Guide http://www.u-toyama.ac.jp/en/access/index.html
Contact
Person
Prof. Kouichi Maezawa
+81-76-445-6725
Announcement Please join us for an opening reception after the last session on Aug.8.
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Thu, Aug 8 PM 
14:00 - 17:35
(1) 14:00-14:25 Ultrashort Pulse Generators Using Resonant Tunneling Diodes with Improved Power Performance ED2013-37 Dongpo Wu, Katsutaro Mizumaki, Jie Pan, Masayuki Mori, Koichi Maezawa (Univ. of Toyama)
(2) 14:25-14:50 Fluidic Self-Assembly for Heterogeneous Integration of High Performance Resonant Tunneling Diodes using Molten Gallium Bumps ED2013-38 Jun Nakano, Tomoaki Shibata, Hiroki Morita, Hiroshi Sakamoto, Masayuki Mori, Koichi Maezawa (Univ. of Toyama)
(3) 14:50-15:15 Dynamics of edge oscillation in a transmission line loaded with regularly spaced tunnel diodes ED2013-39 Koichi Narahara (Yamagata Univ.)
  15:15-15:30 Break ( 15 min. )
(4) 15:30-16:20 [Invited Talk]
Analysis of GaN-based metal-insulator-semiconductor devices by capacitance-frequency-temperature mapping ED2013-40
Toshi-kazu Suzuki, Hong-An Shih, Masahiro Kudo (JAIST)
(5) 16:20-16:45 Application of sputtering-deposited BN films to AlGaN/GaN metal-insulator-semiconductor heterojunction field-effect transistors ED2013-41 Yuji Yamamoto, Tuan Quy Nguyen, Hong-An Shih, Masahiro Kudo, Toshi-kazu Suzuki (JAIST)
(6) 16:45-17:10 On the enhanced 2DEG density and mobility in AlGaN/GaN heterostructures by the reaction with metals ED2013-42 Hirokuni Tokuda, Toshikazu Kojima, Masaaki Kuzuhara (Univ of Fukui)
(7) 17:10-17:35 Characterization of Al2O3/ n-Ga2O3 MOS diodes ED2013-43 Takafumi Kamimura, Man Hoi Wong (NICT), Kohei Sasaki (Tamura Corp.), Daivasigamani Krishnamurthy (NICT), Akito Kuramata (Tamura Corp.), Takekazu Masui (Koha Co., Ltd.), Shigenobu Yamakoshi (Tamura Corp.), Masataka Higashiwaki (NICT)
Fri, Aug 9 AM 
09:00 - 11:45
(8) 09:00-09:25 MEMS Microphones on InP Substrates for High Performance Digital Ultrasonic Sensors ED2013-44 Shunya Fujino, Yuta Mizuno, Kazuhiro Takaoka, Masayuki Mori, Koichi Maezawa (Univ. of Toyama)
(9) 09:25-09:50 Effect of Vacuum Annealing on Al2O3/GaSb MOS Interfaces ED2013-45 Takahiro Gotow, Sachie Fujikawa, Hiroki I. Fujishiro (Tokyo Univ. of Science), Mutsuo Ogura, Tetsuji Yasuda, Tatsuro Maeda (AIST)
(10) 09:50-10:15 Formation of GaSb Islands on Si(111) Substrate Using Ga/Si(111) Surface Reconstructions ED2013-46 Ryuto Machida, Ryusuke Toda, Keisuke Yoshiki, Sachie Fujikawa (Tokyo Univ. of Science), Shinsuke Hara (NICT), Katsumi Irokawa, Hirofumi Miki (Tokyo Univ. of Science), Akira Kawazu (Tokyo Denki Univ.), Hiroki I. Fujishiro (Tokyo Univ. of Science)
  10:15-10:30 Break ( 15 min. )
(11) 10:30-10:55 Sub-band transport and quantum Hall effect in InGaAs two-dimensional electron gas bilayer system ED2013-47 Shiro Hidaka, Hiuma Iwase, Masashi Akabori, Syoji Yamada (JAIST), Yasutaka Imanaka, Tadashi Takamasu (NIMS)
(12) 10:55-11:20 Fabrication and electrical characterization of in-plane-oriented InAs nanowires by selective area molecular beam epitaxy on GaAs ED2013-48 Masashi Akabori, Tatsuya Murakami, Syoji Yamada (JAIST)
(13) 11:20-11:45 Selective area growth of InSb on Si(111) substrate by using Sb induced surface reconstruction ED2013-49 Wang Xin, Masayuki Mori, Koichi Maezawa (Univ. of Toyama)

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Tetsuzo Ueda(Panasonic)
TEL:+81-6-6906-4940、FAX:+81-6-6906-2426
E-zopac
Seiya Kasai (Hokkaido Univ.)
TEL : 011-706-6509 Fax : 011-716-6004
E- : irciqei 


Last modified: 2013-06-20 20:08:53


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