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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Takahiro Shinada (Tohoku Univ.)
Vice Chair Hiroshige Hirano (TowerJazz Panasonic)
Secretary Hiroya Ikeda (Shizuoka Univ.), Tetsu Morooka (TOSHIBA MEMORY)
Assistant Takahiro Mori (AIST), Nobuaki Kobayashi (Nihon Univ.)

Conference Date Fri, Jun 21, 2019 11:00 - 17:05
Topics Material Science and Process Technology for MOS Devices and Memories 
Conference Place  
Transportation Guide www.vbl.nagoya-u.ac.jp/access.html
Sponsors This conference is co-sponsored by The Japan Society of Applied Physics.
Participation Fee This workshop will be held as the IEICE workshop in fully electronic publishing. Participant fee will be necessary except the speakers and participants other than the participants to workshop(s) in non-electronic publishing. See the participant fee page. We request the participant fee to participants who will attend the workshop(s) on SDM.

Fri, Jun 21 AM 
11:00 - 17:05
(1) 11:00-11:20 Depth Profiling of Nitrogen Atoms in No-annealed SiO2/4H-SiC Structures Takuji Hosoi, Kidist Moges (Osaka Univ.), Mitsuru Sometani (AIST), Takayoshi Shimura (Osaka Univ.), Shinsuke Harada (AIST), Heiji Watanabe (Osaka Univ.)
(2) 11:20-11:40 Ultra-low resistance contact for n-type Ge1-xSnx with in-situ Sb heavily doping and nickel stanogermanide formation Jihee Jeon, Akihiro Suzuki, Shigehisa Shibayama, Shigeaki Zaima, Osamu Nakatsuka (Nagoya Univ.)
(3) 11:40-12:00 Formation of Ultrathin Segregated-Ge Crystal on Al/Ge(111) Surface by Thermal Annealing Masato Kobayashi, Akio Ohta, Masashi Kurosawa, Masaaki Araidai, Noriyuki Taoka, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki (Nagoya Univ.)
(4) 12:00-12:20 Mechanism of strain relaxation enhancement by ion implantation method for group-IV semiconductor alloy thin film Hidetaka Sofue, Masahiro Fukuda, Shigehisa Shibayama (Nagoya Univ.), Shigeaki Zaima (Meijo Univ.), Osamu Nakatsuka, (Nagoya Univ.)
  12:20-13:30 Lunch Break ( 70 min. )
(5) 13:30-14:00 [Invited Lecture]
Necessity of 2D/3D nano metrology from the point of semiconductor devices
Koji Usuda (Toshiba Memory Co.)
(6) 14:00-14:30 [Invited Lecture]
Nano-scale elasticity evaluation by ultrasonic atomic force microscopy
Toshihiro Tsuji (Tohoku Univ.), Kazushi Yamanaka (Ball Wave)
(7) 14:30-15:00 [Invited Lecture]
Observation of three dimensional atomic arrangements of active and inactive impurities heavy doped in silicon by using photoelectron holography method
Kazuo Tsutsui (Tokyo Tech), Tomohiro Matsushita (JASRI), Kotaro Natori, Tatsuhiro Ogawa (Tokyo Tech), Takayuki Muro (JASRI), Yoshitada Morikawa (Osaka Univ.), Takuya Hoshii, Kuniyuki Kakushima, Hitoshi Wakabayashi (Tokyo Tech), Kouichi Hayashi (Nagoya Inst. Tech.), Fumihiko Matsui (Inst. Molecular Science), Toyohiko Kinoshita (JASRI)
(8) 15:00-15:30 [Invited Lecture]
Three-Dimensional Structural Observation for Nanoscale Devices and Crystal defects
Kazuhiko Omote, Yoshiyasu Ito (Rigaku)
  15:30-15:45 Break ( 15 min. )
(9) 15:45-16:05 New Operation Mode of VO2-Channel Mott Transistors for Ultra-Sharp ON/OFF Switching Takeaki Yajima (Univ. of Tokyo), Yusuke Samata, Tomonori Nishimura, Akira Toriumi (JST)
(10) 16:05-16:25 First principle simulation about phase change of superlattice GeTe/Sb2Te3 Yutaro Ogawa, Hiroaki Nohara, Hiroki Shirakawa, Masaaki Araidai, Kenji Shiraishi (Nagoya Univ.)
(11) 16:25-16:45 Evaluation of Interface Characteristics in GaN-MOS Capacitors with Boron-doped Al2O3 Gate Insulators Manato Deki, Shin Okude, Yuto Ando, Hirotaka Watanabe, Atsushi Tanaka, Maki Kushimoto, Shugo Nitta, Yoshio Honda, Hiroshi Amano (Nagoya Univ.)
(12) 16:45-17:05 Chemical Structure and Electronic States of HfSiOx/GaN(0001) Akio Ohta, Katunori Makihara (Nagoya Univ.), Toshihide Nabatame (NIMS), Koji Shiozaki, Seiichi Miyazaki (Nagoya Univ.)

Announcement for Speakers
General TalkEach speech will have 15 minutes for presentation and 5 minutes for discussion.
Invited LectureEach speech will have 25 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Tetsu Morooka(Toshiba Memory Corp.)
Tel 059-390-7451 Fax 059-361-2739
E-: ba 


Last modified: 2019-04-19 21:22:29


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