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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Tatsuya Kunikiyo (Renesas)
Vice Chair Takahiro Shinada (Tohoku Univ.)
Secretary Rihito Kuroda (Tohoku Univ.), Tadashi Yamaguchi (Renesas)
Assistant Hiroya Ikeda (Shizuoka Univ.), Tetsu Morooka (TOSHIBA MEMORY)

{INFOMESITEM}
Conference Date Wed, Oct 25, 2017 14:00 - 17:20
Thu, Oct 26, 2017 09:30 - 14:30
Topics Process Science and New Process Technology 
Conference Place Niche, Tohoku Univ. 
Address 6-6-10, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan
Contact
Person
Rihito Kuroda
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Wed, Oct 25 PM 
14:00 - 17:20
(1) 14:00-14:50 [Invited Talk]
Zero-step-height planarization: Controlling PMD volume before CMP SDM2017-50
Tomoyasu Kakegawa, Takuya Futase (SanDisk)
(2) 14:50-15:20 Experimental Investigation of Localized Stress Induced Leakage Current Distribution and its Decrease by Atomically Flattening Process SDM2017-51 Hyeonwoo Park, Rihito Kuroda, Tetsuya Goto, Tomoyuki Suwa, Akinobu Teramoto, Daiki Kimoto, Shigetoshi Sugawa (Tohoku Univ)
(3) 15:20-15:50 Si surface atomically flattening process with chemical oxide passivation for Ar/H2 annealing and Hf-based MONOS device application SDM2017-52 Sohya Kudoh, Shun-ichiro Ohmi (Tokyo Tech.)
  15:50-16:00 Break ( 10 min. )
(4) 16:00-16:30 Nanoscale conformal doping technology by spin on diffusion source SDM2017-53 Tetsuro Kinoshita, Shunichi Mashita, Takuya Ohashi, Yoshihiro Sawada, Yohei Kinoshita, Satoshi Fujimura (TOK)
(5) 16:30-17:20 [Invited Talk]
A Study on the Device Characteristics of Pentacene-based OFET with HfO2 Gate Insulator SDM2017-54
Yasutaka Maeda, Yeyuan Liu, Mizuha Hiroki, Shun-ichiro Ohmi (Tokyo Tech.)
  17:20-17:30 ( 10 min. )
Thu, Oct 26 AM 
09:30 - 14:30
(6) 09:30-10:20 [Invited Talk]
Utilization of Big Data for Innovation in Semiconductor Memory Manufacturing
-- Comprehensive Big-Data-Based Monitoring System for Yield Analysis in Semiconductor Manufacturing --
SDM2017-55
Hiroshi Akahori (Toshiba Memory), Kouta Nakata, Ryohei Orihara, Yoshiaki Mizuoka, Kentaro Takagi (Toshiba), Kenichi Kadota, Takaharu Nishimura, Yukako Tanaka, Hidetaka Eguchi (Toshiba Memory)
(7) 10:20-10:50 A High Sensitivity Realtime Compact Gas Concentration Sensor using UV absorption spectroscopy and Charge Amplifier Circuit SDM2017-56 Hidekazu Ishii (Tohoku Univ.), Masaaki Nagase, Nobukazu Ikeda (Fujikin Inc.), Yoshinobu Shiba, Yasuyuki Shirai, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.)
(8) 10:50-11:20 Effect of ZrO2 seed layer on ferroelectricity of HfxZr1-xO2 thin film SDM2017-57 Takashi Onaya (Meiji Univ./NIMS), Toshihide Nabatame (NIMS/JST), Naomi Sawamoto (Meiji Univ.), Akihiko Ohi, Naoki Ikeda, Toyohiro Chikyow (NIMS), Atsushi Ogura (Meiji Univ.)
  11:20-13:00 Lunch Break ( 100 min. )
(9) 13:00-13:30 [Invited Lecture]
High-temperature stable Physical Unclonable Functions with error-free readout scheme based on 28nm SG-MONOS flash memory for security applications SDM2017-58
Takahiro Shimoi, Tomoya Saito, Hirokazu Nagase, Masayuki Izuna, Akihiko Kanda, Takashi Ito, Takashi Kono (Renesas Electronics)
(10) 13:30-14:00 Pinning Voltage Control of CMOS Image Sensor by measuring sheet resistance at micro test structure in scribe line SDM2017-59 Yotaro Goto (RSMC), Tadasihi Yamaguchi, Masazumi Matsuura (REL), Koji Iizuka (RSMC)
(11) 14:00-14:30 Analysis of Random Telegraph Noise Behaviors toward Changes of Source Follower Transistor Operation Conditions using High Accuracy Array Test Circuit SDM2017-60 Shinya Ichino, Takezo Mawaki, Akinobu Teramoto, Rihito Kuroda, Shunichi Wakashima, Shigetoshi Sugawa (Tohoku Univ.)

Announcement for Speakers
General TalkEach speech will have 25 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E-: e3 


Last modified: 2017-08-22 21:09:07


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