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Technical Committee on Electron Device (ED) [schedule] [select]
Chair Naoki Hara (Fujitsu Labs.)
Vice Chair Koichi Maezawa (Univ. of Toyama)
Secretary Seiya Kasai (Hokkaido Univ.), Koji Matsunaga (NEC)
Assistant Toshikazu Suzuki (JAIST), Manabu Arai (New JRC)

Technical Committee on Component Parts and Materials (CPM) [schedule] [select]
Chair Yasushi Takano (Shizuoka Univ.)
Vice Chair Satoru Noge (Numazu National College of Tech.)
Secretary Tomomasa Sato (Kanagawa Univ.), Junichi Kodate (NTT)
Assistant Nobuyuki Iwata (Nihon Univ.), Takashi Sakamoto (NTT)

Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Yuzou Oono (Univ. of Tsukuba)
Vice Chair Tatsuya Kunikiyo (Renesas)
Secretary Rihito Kuroda (Tohoku Univ.)
Assistant Tadashi Yamaguchi (Renesas)

Conference Date Thu, May 28, 2015 13:00 - 18:20
Fri, May 29, 2015 08:40 - 12:35
Topics crystal growth、devices characterization , etc. 
Conference Place VBL 3F seminar-room, Toyohashi University of Technology 
Address 1-1, Hibariga-oka, Tempaku-cho, Toyohashi 441-8580, Japan.
Transportation Guide Toyotetsu bus runs from Toyohashi station to TUT every 10-15 minutes from 7am to 8pm. Take the bus direction to "Gikadai-mae," "Rispa Toyohashi," or "Fukushi-mura" from the bus stop number 2 of the Toyohashi station, east exit.
http://www.tut.ac.jp/english/introduction/map.html
Contact
Person
Assoc. Prof. Hiroshi Okada
+81-532-44-6979
Sponsors This conference is cooperated by VBL, Toyohashi University of Technology
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Thu, May 28 PM 
13:00 - 18:20
(1) 13:00-13:25 Synthesis of graphenes by chemical vapor deposition using liquid precursor ED2015-16 CPM2015-1 SDM2015-18 Naoki Kishi, Takaaki Iwata, Kazuki Iwama, Jianfeng Bao, Liu Huito, Tetsuo Soga (NITech)
(2) 13:25-13:50 Multilayer layer graphene synthesis by Microwave Surface Wave Plasma CVD, and high quality according to ultraviolet light shading ED2015-17 CPM2015-2 SDM2015-19 Susumu Ichimura, Hideo Uchida, Koichi Wakita (Chubu Univ.), Yasuhiko Hayashi (Okayama Univ.), Masayoshi Umeno (Chubu Univ.)
(3) 13:50-14:15 Study on self-assembled monolayers by the immersion method on SiC substrate ED2015-18 CPM2015-3 SDM2015-20 Yuya Suzuki, Yuji Hirose, Shohei Tamaoki, Reina Miyagawa, Takatoshi Kinoshita, Osamu Eryu (NiTech)
(4) 14:15-14:40 Optical properties of InGaN nanoplates grown by molecular beam epitaxy ED2015-19 CPM2015-4 SDM2015-21 Tetsuya Kouno (Shizuoka Univ.), Masaru Sakai (Univ. of Yamanashi), Katsumi Kishino (Sophia UNiv.), Kazuhiko Hara (Shizuoka Univ.)
  14:40-14:50 Break ( 10 min. )
(5) 14:50-15:15 Semi-polar GaN (10-13) grown on nominal Si (001) substrate with sputtered AlN buffer layer Hojun Lee, Tadashi Mitsunari, Yoshio Honda, Hiroshi Amano (Nagoya Univ.)
(6) 15:15-15:40 Control of N composition of GaAsN alloy grown by surface nitridation ED2015-20 CPM2015-5 SDM2015-22 Noriyuki Urakami, Keisuke Yamane, Hiroto Sekiguchi, Hiroshi Okada, Akihiro Wakahara (Toyohashi Tech.)
(7) 15:40-16:05 Growth and preliminary MOSFETs of corundum-structured oxide semiconductors ED2015-21 CPM2015-6 SDM2015-23 Yoshito Ito, Kentaro Kaneko, Shizuo Fujita (Kyoto Univ.)
(8) 16:05-16:30 Schottky barrier diodes of high mobility β-Ga2O3 (-201) single crystals grown by edge-defined-fed growth method ED2015-22 CPM2015-7 SDM2015-24 Yuta Koga, Kazuya Harada, Kenji Hanada, Toshiyuki Oishi, Makoto Kasu (Saga Univ.)
  16:30-16:40 Break ( 10 min. )
(9) 16:40-17:05 Analysis of forward characteristics of GaN Schottky barrier diodes by using floating electrodes ED2015-23 CPM2015-8 SDM2015-25 Syuzo Yamaguchi, Toshiyuki Oishi (Saga Univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric Corp.)
(10) 17:05-17:30 Device simulation of NO2-exposed H-terminated diamond FETs with Al2O3 insulator ED2015-24 CPM2015-9 SDM2015-26 Toshiyuki Oishi, Ryutaro Higashi, Kazuya Harada, Yuta Koga (Saga Univ.), Kazuyuki Hirama (NTT), Makoto Kasu (Saga Univ.)
(11) 17:30-17:55 Possibility of Chirality Control for In-Plane Oriented Single-Walled Carbon Nanotubes by Free Electron Laser Irradiation ED2015-25 CPM2015-10 SDM2015-27 Daiki Kawaguchi, Keisuke Yoshida, Miu Kobayashi, Shinnosuke Harumiya, Tomoko Nagata, Hiroshi Yamamoto, Nobuyuki Iwata (Nihon Univ.)
(12) 17:55-18:20 Optimization of Growth Condition in Co/Pt/r-oriented Cr2O3 Multilayer on Sapphire Substrates ED2015-26 CPM2015-11 SDM2015-28 Takashi Sumida, Kosuke Hashimoto, Shinjiro Fukui, Tomoko Nagata, Hiroshi Yamamoto, Nobuyuki Iwata (Nihon Univ.)
Fri, May 29 AM 
08:40 - 12:35
(13) 08:40-09:05 Glass-tube-free ion image sensors based on calculating the solution potential from the sensitivity difference between pixels ED2015-27 CPM2015-12 SDM2015-29 Shin Watanabe, Fumihiro Dasai, Tatsuya Iwata, Makoto Ishida, Toshiaki Hattori, Kazuaki Sawada (TUT)
(14) 09:05-09:30 Spectro-electrochemical characterization of GaN/electrolyte interface and its application to the nanostructure formation ED2015-28 CPM2015-13 SDM2015-30 Yusuke Kumazaki, Akio Watanabe, Zenji Yatabe, Taketomo Sato (Hokkaido Univ.)
(15) 09:30-09:55 Crystal Structure and Oxygen Permeation Properties of Oxygen Permeable SrFeO3-δ ED2015-29 CPM2015-14 SDM2015-31 Isao Kagomiya, Shiro Shirakawa, Ken-ichi Kakimoto (NITech)
(16) 09:55-10:20 Quantitative evaluation of temperature dependence of surface recombination velocities for 4H-SiC ED2015-30 CPM2015-15 SDM2015-32 Kimihiro Kohama, Yuto Mori, Masashi Kato, Masaya Ichimura (NIT)
  10:20-10:30 Break ( 10 min. )
(17) 10:30-10:55 Effects of annealing on properties of electrochemically deposited CuxZnyS thin films ED2015-31 CPM2015-16 SDM2015-33 Tong Bayingaerdi, Masaya Ichimura (NITech)
(18) 10:55-11:20 Influence of stirring on SnS deposition using chemical bath deposition ED2015-32 CPM2015-17 SDM2015-34 Taishi Suzuki, Yasushi Takano, Akihiro Ishida (Shizuoka Univ.)
(19) 11:20-11:45 Fabrication of Cu2O/Fe-O heterojunction solar cells by electrodeposition ED2015-33 CPM2015-18 SDM2015-35 Zhang Chaolong (NIT), Junie Jhon M. Vequizo (TTI), Masaya Ichimura (NIT)
(20) 11:45-12:10 Sulfur annealing of electrochemically deposited iron sulfide thin films and application to heterojunction cells with ZnO ED2015-34 CPM2015-19 SDM2015-36 Takahiro Kajima (Nagoya Inst. of Tech.), Shoichi Kawai (DENSO CORP.), Masaya Ichimura (Nagoya Inst. of Tech.)
(21) 12:10-12:35 Observation of fluorescence from Legionella pneumophila capturedin a microfluidic chip ED2015-35 CPM2015-20 SDM2015-37 Yusuke Nishimura, Ryuhei Hayashi, Hirokazu Nakazawa, Makoto Ishida, Kazuaki Sawada, Hiromu Ishii (Toyohashi Univ. of Tech.), Katsuyuki Machida (Tokyo Institute of Tech., NTT-AT), Kazuya Masu (Tokyo Institute of Technology, NTT Advanced Tech.), Changle Wang, Ken-Ichiro Iida, Mitsumasa Saito, Shin-ichi Yoshida (Kyusyu Univ.)

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Seiya Kasai (Hokkaido Univ.)
TEL : 011-706-6509 Fax : 011-716-6004
E- : irciqei
Koji Matsunaga(NEC)
TEL:+81-44-455-8348、FAX:+81-44-455-8253
E-: k-fpc 
CPM Technical Committee on Component Parts and Materials (CPM)   [Latest Schedule]
Contact Address  
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4834
E-: fffe 


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