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| Chair |
|
Tetsuro Endo (Tohoku Univ.) |
| Vice Chair |
|
Yasuo Nara (Fujitsu Microelectronics) |
| Secretary |
|
Yukinori Ono (NTT), Katsunori Onishi (Kyushu Inst. of Tech.) |
| Assistant |
|
Shintaro Nomura (Univ. of Tsukuba) |
|
| Conference Date |
Fri, Dec 17, 2010 10:00 - 17:45 |
| Topics |
Fabrication and Characterization of Si and Si-related Materials |
| Conference Place |
A1 Building, Katsura Campus, Kyoto University |
| Address |
A1, Katsura, Nishikyo, Kyoto, 615-8510, Japan |
| Transportation Guide |
Please take a bus from the Hankyu-Katsura station.
http://www.kyoto-u.ac.jp/ja/access/campus/map6r_k.htm |
Contact
Person |
Tsunenobu Kimoto, Kyoto University
+81-75-383-2300 |
| Announcement |
Please join us for a reception after the meeting. |
Copyright
and
reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Fri, Dec 17 AM
10:00 - 12:20 |
| (1) |
10:00-10:20 |
Bandgap of <100> Si Nanowires Derived from Threshold Voltage of MOSFETs and Theoritical Calculations  SDM2010-185 |
Hironori Yoshioka, Naoya Morioka, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) |
| (2) |
10:20-10:40 |
X-Ray Detectors (Silicon Drift Detectors) using Higher-Resistivity Si
-- Simulation Results -- SDM2010-186 |
Seigo Kitanoya, Seiji Nishikawa, Hideharu Matsuura (Osaka Electro-Communication Univ.) |
| (3) |
10:40-11:00 |
Ion channeling at Heusler alloy Fe3-xMnxSi(111)/Ge(111) heteroepitaxial interfaces SDM2010-187 |
Takahito Nakajima, Bui Matsukura (Kyoto Univ.), Kazumasa Narumi (JAEA), Yoshihito Maeda (Kyoto Univ.) |
| (4) |
11:00-11:20 |
Improvement of Luminescence Property of ZnS Inorganic EL by Atomization Treatment of Phosphor SDM2010-188 |
Shogo Horiguchi, Takuya Kontani, Masahiro Horita (NAIST), Nobuyoshi Taguchi (ITI), Yukiharu Uraoka (NAIST/CREST) |
| (5) |
11:20-11:40 |
Laser Doping at Room Temperature in Multi-Crystalline Silicon Solar Cell Process SDM2010-189 |
Mitsuhiro Hasegawa, Kenji Hirata, Tamaki Takayama, Tomohiro Funatani, Takashi Fuyuki (NAIST) |
| (6) |
11:40-12:00 |
Optimization of Laser Doping by Controlled Dopant Precursor Layer in Silicon Solar Cell Process SDM2010-190 |
Tomohiro Funatani, Kenji Hirata, Tamaki Takayama, Mitsuhiro Hasegawa, Takashi Fuyuki (NAIST) |
| (7) |
12:00-12:20 |
Effect of H2-N2 Plasma Exposure on Nanostructured Silicon SDM2010-191 |
Akitsugu Watanabe, Kenichi Suda, Hideki Nakada, Mitsuya Motohashi (Tokyo Denki Univ.) |
| |
12:20-13:20 |
Lunch Break ( 60 min. ) |
Fri, Dec 17 PM
13:20 - 15:30 |
| (8) |
13:20-13:50 |
[Invited Talk]
Estimation of Physical Properties and Control of Memory Performance in ReRAM SDM2010-192 |
Kentaro Kinoshita, Takatoshi Yoda, Hayato Tanaka, Akihiro Hanada, Satoru Kishida (Tottori Univ.) |
| (9) |
13:50-14:10 |
Effects of thermal treatment in vacuum on the electrical characteristics of Pt/NiO/Pt stack structures for ReRAM SDM2010-193 |
Tatsuya Iwata, Yusuke Nishi, Tsunenobu Kimoto (Kyoto Univ.) |
| (10) |
14:10-14:30 |
Effects of Sacrifice Oxidation on Characterization of Defects in High-Purity Semi-Insulating 4H-SiC by Discharge Current Transient Spectroscopy SDM2010-194 |
Seiji Nishikawa, Seigo Kitanoya, Hideharu Matsuura (Osaka Electro-Communication Univ.) |
| (11) |
14:30-14:50 |
Change of majority carrier density in 4H-SiC epilayer by 200keV electron irradiation SDM2010-195 |
Takunori Nojiri, Kozo Nishino, Hideki Yanagisawa, Hideharu Matsuura (Osaka Electro-Communication Univ.), Shinobu Onoda, Takeshi Ohshima (JAEA) |
| (12) |
14:50-15:10 |
Properties of the oxidized layers on SiC in supercritical water SDM2010-196 |
Tomohisa Satoh (Osaka Univ.), Takashi Futatsuki, Taro Oe (Organo), Naoyoshi Komatsu, Chiharu Kimura, Hidemitsu Aoki (Osaka Univ.) |
| (13) |
15:10-15:30 |
Irradiation Effects of Silicon Surface by Polyatomic Ion Beams SDM2010-197 |
Mitsuaki Takeuchi, Hiromichi Ryuto, Gikan H. Takaoka (Kyoto Univ.) |
| |
15:30-15:45 |
Break ( 15 min. ) |
Fri, Dec 17 PM
15:45 - 17:45 |
| (14) |
15:45-16:05 |
Photoluminescence and deep level transient spectroscopy study on recrystallization of ultra-shallow junction SDM2010-198 |
Masashi Okutani, Shuhei Takashima, Masahiro Yoshimoto (KIT), Woo Sik Yoo (WaferMasters, Inc.) |
| (15) |
16:05-16:25 |
Lateral Large-Grained Low-Temperature Poly-Si1-xGex TFTs on Glass Substrate SDM2010-199 |
Yasunori Okabe, Kenji Kondo (Tohoku Gakuin Univ.), Kenta Hirose, Junki Suzuki, Kuninori Kitahara (Shimane Univ.), Akito Hara (Tohoku Gakuin Univ.) |
| (16) |
16:25-16:45 |
Evaluation of two layers simultaneous crystallized LTPS-TFT memory by the laser irradiation from the back. SDM2010-200 |
Masahiro Matsue, Kazunori Ichikawa, Hiroshi Akamatsu (KCCT), Koji Yamasaki, Masahiro Horita, Yukiharu Uraoka (NAIST) |
| (17) |
16:45-17:05 |
Study for DNA-Field Effect Transistor with Si gate SDM2010-201 |
Shogo Takagi, Naoto Matsuo, Kazushige Yamana, Akira Heya, Tadao Takada (Univ of Hyogo), Kenji Sakamoto, Shin Yokoyama (Hiroshima Univ) |
| (18) |
17:05-17:25 |
Neural Network at Device Level using Poly-Si TFT
-- Learning of multiple times and learning of AND, OR, EXOR -- SDM2010-202 |
Tomoaki Miyatani, Yusuke Fujita (Ryukoku Univ), Daiki Mishima (NAIST), Jin Taniguchi, Tomohiro Kasakawa, Mutsumi Kimura (Ryukoku Univ) |
| (19) |
17:25-17:45 |
Effect of high pressure vapor anneal treatment on the a-In2Ga2Zn1O7 TFTs characteristics SDM2010-203 |
Tomoki Maruyama, Mami Fujii (NAIST), Masashi Kasami, Koki Yano (Idemitsu Kosan), Masahiro Horita, Yasuaki Ishikawa (NAIST), Yukiharu Uraoka (NAIST/JST-CREST) |
| Announcement for Speakers |
| General Talk | Each speech will have 15 minutes for presentation and 5 minutes for discussion. |
| Invited Talk | Each speech will have 25 minutes for presentation and 5 minutes for discussion. |
| Contact Address and Latest Schedule Information |
| SDM |
Technical Committee on Silicon Device and Materials (SDM) [Latest Schedule]
|
| Contact Address |
Tsunenobu Kimoto (Kyoto University)
Tel: 075-383-2300 Fax: 075-383-2303
E- :      ee k -u |
Last modified: 2010-10-21 09:07:39
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