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Technical Committee on Electron Device (ED) [schedule] [select]
Chair Tamotsu Hashidume (Hokkaido Univ.)
Vice Chair Toru Kaji (Toyota Central R&D Labs.)
Secretary Koichi Murata (NTT), Naoki Hara (Fujitsu Labs.)
Assistant Kunio Tsuda (Toshiba), Michihiko Suhara (Tokyo Metropolitan Univ.)

Technical Committee on Component Parts and Materials (CPM) [schedule] [select]
Chair Kanji Yasui (Nagaoka Univ. of Tech.)
Vice Chair Yasushi Takemura (Yokohama National Univ.)
Secretary Naoki Oba (NTT), Satoru Noge (Numazu National College of Tech.)
Assistant Tadayuki Imai (NTT), Katsuya Abe (Shinshu Univ.)

Technical Committee on Lasers and Quantum Electronics (LQE) [schedule] [select]
Chair Hiroshi Ishikawa (AIST)
Vice Chair Hitoshi Kawaguchi (NAIST)
Secretary Junichi Hashimoto (Sumitomo Electric Industries), Kenji Sato (NEC)

Conference Date Thu, Nov 19, 2009 08:55 - 18:25
Fri, Nov 20, 2009 09:30 - 16:15
Topics  
Conference Place The University of Tokushima Josanjima Campus 
Address 2-1, Josanjima-cho, Tokushima-shi, 770-8506 Japan
Transportation Guide http://www.tokushima-u.ac.jp/english/category/0011572.html
Contact
Person
Prof. Yasuo Ohno (The University of Tokushima)
088-656-7438 (Ext.5411)
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Thu, Nov 19 AM 
08:55 - 18:25
  08:55-09:00 Opening Address ( 5 min. )
(1) 09:00-09:25 GaN Re-growth Using Ta Mask Which Etches Covering GaN Layer ED2009-128 CPM2009-102 LQE2009-107 Kohei Hara, Yoshiki Naoi, Shiro Sakai (Univ. of Tokushima)
(2) 09:25-09:50 HVPE growth of {11-22} GaN Crystals on m-plane Sapphire Substrates ED2009-129 CPM2009-103 LQE2009-108 Hitoshi Sasaki, Hiroki Goto, Akira Usui (Furukawa Co., Ltd.)
(3) 09:50-10:15 MOVPE growth and optical properties of AlGaN on AlN/sapphire ED2009-130 CPM2009-104 LQE2009-109 Yuki Shimahara, Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Fumitsugu Fukuyo, Tomoyuki Okada, Hidetsugu Takaoka, Harumasa Yoshida (HAMAMATSU PHOTONICS K.K.)
  10:15-10:25 Break ( 10 min. )
(4) 10:25-10:50 MBE growth of well-aligned InN crystals using Mo-mask selective area growth technique ED2009-131 CPM2009-105 LQE2009-110 Jumpei Kamimura, Katsumi Kishino, Akihiko Kikuchi (Sophia Univ./JST)
(5) 10:50-11:15 High quality InN crystal growh by RF-MBE
-- Growth of position-controlled InN nanocolumns --
ED2009-132 CPM2009-106 LQE2009-111
Tsutomu Araki, Tomohiro Yamaguchi, Masamitsu Kaneko (Ritsumeikan Univ.), Yasushi Nanishi (Ritsumeikan Univ./Seoul National Univ.)
(6) 11:15-11:40 Proposal of new growth method for high-quality InN and development on growth of InGaN ED2009-133 CPM2009-107 LQE2009-112 Tomohiro Yamaguchi (Ritsumeikan Univ.), Yasushi Nanishi (Ritsumeikan Univ./Seoul National Univ.)
(7) 11:40-12:05 Exciton emission mechanism in AlN epitaxial films ED2009-134 CPM2009-108 LQE2009-113 Takeyoshi Onuma, Kouji Hazu (Tohoku Univ.), Takayuki Sota (Waseda Univ.), Akira Uedono (Univ. of Tsukuba), Shigefusa F. Chichibu (Tohoku Univ.)
  12:05-13:05 ( 60 min. )
(8) 13:05-13:30 High spatial resolution PL mapping of {11-22} InGaN quantum wells by scanning near-field optical microscope ED2009-135 CPM2009-109 LQE2009-114 Akio Kaneta, Masaya Ueda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.)
(9) 13:30-13:55 Mapping of luminous intensity saturation if InGaN/GaN SQWs studied by scanning near-field optical microscopy ED2009-136 CPM2009-110 LQE2009-115 Akira Hashiya, Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.)
(10) 13:55-14:20 Anisotropy in structural and optical properties of nonpolar group III nitrides grown on ZnO substrates ED2009-137 CPM2009-111 LQE2009-116 Atsushi Kobayashi, Kazuma Shimomoto, Kohei Ueno, Tomofumi Kajima, Jitsuo Ohta (Univ. of Tokyo), Hiroshi Fujioka, Masaharu Oshima (Univ. of Tokyo/JST)
(11) 14:20-14:45 Theoretical Studies on the Characteristic Electronic Structures of In-Containint Nitride Seimiconductors Based of the First Principles Calculations ED2009-138 CPM2009-112 LQE2009-117 Kenji Shiraishi, Jun-ichi Iwata (Univ. of Tsukuba/JST), Teruaki Obata (Univ. of Tsukuba), Atsushi Oshiyama (Univ. of Tokyo/JST)
  14:45-14:55 Break ( 10 min. )
(12) 14:55-15:20 Electrical and optical properties of polycrystalline GaInAs thin films ED2009-139 CPM2009-113 LQE2009-118 Yoshichika Torii, Takuya Okuzako, Shin-ya Takami, Yasutomo Kajikawa (Shimane Univ.)
(13) 15:20-15:45 Thermodynamical aspects for the raised pressure MOVPE for growth of GaInN ED2009-140 CPM2009-114 LQE2009-119 Kensuke Nagata, Daisuke Iida, Kentaro Nagamatsu, Kenichiro Takeda, Tetsuya Matsubara, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ)
(14) 15:45-16:10 Ultraviolet AlGaN based multiple-quantum-well laser diodes ED2009-141 CPM2009-115 LQE2009-120 Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Yasufumi Takagi, Kazuya Uchiyama, Hirofumi Kan (Hamamatsu Photonics)
(15) 16:10-16:35 Reduction in operating voltage of UV laser diode ED2009-142 CPM2009-116 LQE2009-121 Tomoki Ichikawa, Kenichiro Takeda, Yuji Ogiso, Kengo Nagata, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.), Harumasa Yoshida, Masakazu Kuwabara, Yoji Yamashita, Hirofumi Kan (Hamamatsu Photonics K.K.)
  16:35-16:45 Break ( 10 min. )
(16) 16:45-17:10 Fabrication of red, green and blue emitters using GaN-based UV Light-emitting diodes with Schottky-type structures ED2009-143 CPM2009-117 LQE2009-122 Tohru Honda, Tadashi Nozaki, Naoyuki Sakai, Kazuyuki Noguchi (Kogakuin Univ.)
(17) 17:10-17:35 High Efficiency ultraviolet emitters by activation annealing in oxygen flow ED2009-144 CPM2009-118 LQE2009-123 Kengo Nagata, Tomoki Ichikawa, Kenichiro Takeda, Kentaro Nagamatsu, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.)
(18) 17:35-18:00 Proposal of ultrathin InN-based asymmetric structure III-N QWs for novel photonic devices
-- Development from emitters into solar cells --
ED2009-145 CPM2009-119 LQE2009-124
Kazuhide Kusakabe, Yoshihiro Ishitani, Akihiko Yoshikawa (Chiba Univ.)
(19) 18:00-18:25 GaN Photodetector with Nanostructure on Surface ED2009-146 CPM2009-120 LQE2009-125 Jing Zhang, Yoshiki Naoi, Shiro Sakai (Univ. of Tokushima), Atsuyuki Fukano, Satoru Tanaka (SCIVAX)
Fri, Nov 20 AM 
09:30 - 16:15
(20) 09:30-09:55 AlN growth on period trench patterned AlN/sapphire by Low-pressure HVPE ED2009-147 CPM2009-121 LQE2009-126 Kohei Fujita, Kazuteru Okuura, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Jyun Norimatsu, Hideki Hirayama (Riken)
(21) 09:55-10:20 High rate growth of GaN using 4 inch x 11 multi wafer MOVPE reactor (UR25K) ED2009-148 CPM2009-122 LQE2009-127 Yoshiki Yano, Kazutada Ikenaga, Hiroki Tokunaga (Taiyo Nippon Sanso), Jun Yamamoto (TN EMC), Toshiya Tabuchi (Taiyo Nippon Sanso), Kousuke Uchiyama (TN EMC), Akira Yamaguchi, Yasushi Fukuda, Akinori Ubukata (Taiyo Nippon Sanso), Yasuhiro Harada, Yuzaburo Ban, Koh Matsumoto (TN EMC), Toshiaki Yamazaki (Taiyo Nippon Sanso)
(22) 10:20-10:45 Characterization of quaternary InAlGaN/GaN HEMT epi-structures fabricated on 4inch diameter Si substrates ED2009-149 CPM2009-123 LQE2009-128 Mikiya Ichimura, Makoto Miyoshi, Mitsuhiro Tanaka (NGK Insulators, Ltd.), Takashi Egawa (Nagoya Inst. of Tech.)
  10:45-10:55 Break ( 10 min. )
(23) 10:55-11:20 Variation of surface properties in Mg-doped GaN ED2009-150 CPM2009-124 LQE2009-129 Eri Ogawa, Tamotsu Hashizume (Hokkaido Univ./JST)
(24) 11:20-11:45 Analysis of AlGaN/GaN HFET Current Collapse By Step Stress Measurement ED2009-151 CPM2009-125 LQE2009-130 Kentaro Kuroda, Yusuke Ikawa, Kenta Mituyama, Jin-Ping Ao, Yasuo Ohno (The Univ of Tokushima)
(25) 11:45-12:10 Surface properties and deep electronic levels of AlGaN with high Al compositions ED2009-152 CPM2009-126 LQE2009-131 Katsuya Sugawara, Toshiharu Kubo (Hokkaido Univ.), Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Tamotsu Hashizume (Hokkaido Univ.)
  12:10-13:10 Lunch Break ( 60 min. )
(26) 13:10-13:35 Aluminum-Free Ohmic contact on Si implanted nitride semiconductors ED2009-153 CPM2009-127 LQE2009-132 Akifumi Imai, Takuma Nanjo, Muneyoshi Suita, Yuji Abe, Eiji Yagyu, Tetsuyuki Kurata (Mitsubishi Electric Corp.)
(27) 13:35-14:00 Low resistivity V/Al/Mo/Au ohmic contacts on AlGaN/GaN heterostructure ED2009-154 CPM2009-128 LQE2009-133 Fuminao Watanabe (Fukui Univ.), Norimasa Yafune (JRCM/Sharp Corp.), Motoi Nagamori, Hironari Chikaoka (Fukui Univ.), Keiichi Sakuno (Sharp Corp.), Masaaki Kuzuhara (Fukui Univ.)
(28) 14:00-14:25 High breakdown voltage of AlGaN/GaN HEMTs on Si substrates ED2009-155 CPM2009-129 LQE2009-134 Takaaki Suzue, Lawrence Selvaraj, Takashi Egawa (Nagoya Inst. of Tech.)
(29) 14:25-14:50 Large Current operation of GaN MOSFETs ED2009-156 CPM2009-130 LQE2009-135 Takehiko Nomura, Hiroshi Kambayashi, Yoshihiro Satoh, Yuki Niiyama, Sadahiro Kato (Advanced Power Device Research Association)
  14:50-15:00 Break ( 10 min. )
(30) 15:00-15:25 50 W at 5 GHz RF output power performance of GaN-HEMT on Si substrate ED2009-157 CPM2009-131 LQE2009-136 Shinichi Hoshi, Masanori Itoh, Toshiharu Marui, Hideyuki Okita, Yoshiaki Morino, Isao Tamai, Fumihiko Toda, Shohei Seki (Oki Electric Industry Co., Ltd.), Takashi Egawa (Nagoya Inst. of Tech.)
(31) 15:25-15:50 Development of GaN Schottky Diodes for Microwave Wireless Ubiquitous Power Distribution ED2009-158 CPM2009-132 LQE2009-137 Kensuke Takahashi, Jin-Ping Ao (Tokushima Univ.), Naoki Shinohara (Kyoto Univ.), Naoki Niwa (Kajima Corp.), Teruo Fujiwara (Sho Engineering Corp.), Yasuo Ohno (Tokushima Univ.)
(32) 15:50-16:15 Output characteristics of AlGaN/GaN HEMTs at 60 GHz frequency band ED2009-159 CPM2009-133 LQE2009-138 Issei Watanabe, Akira Endoh, Yoshimi Yamashita, Nobumitsu Hirose (NICT), Takashi Mimura (NICT/Fujitsu Labs.), Toshiaki Matsui (NICT)

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Koichi Murata(NTT)
TEL:+81-46-240-2871、FAX:+81-46-270-2872
E-aecl
Hara Naoki (Fujitsu Lab.)
TEL : +81-46-250-8242、FAX : +81-46-250-8168
E- : o
Kunio Tsuda(Toshiba)
TEL : +81-44-549-2142、FAX : +81-44-520-1501
E- : oba
Michihiko Suhara (Tokyo Metropolitan Univ.)
TEL : +81-42-677-2765 Fax : +81-42-677-2756
E- : t 
CPM Technical Committee on Component Parts and Materials (CPM)   [Latest Schedule]
Contact Address Katsuya Abe (Shinshu Univ.)
E-: abenshu-u 
LQE Technical Committee on Lasers and Quantum Electronics (LQE)   [Latest Schedule]
Contact Address Jun-ichi Hashimoto (Sumitomo Electric Industries, LTD.)
TEL +81-45-853-7308, FAX +81-45-852-2913
E-: -jui 
Announcement Homepage of LQE is http://www.ieice.org/~lqe/jpn/


Last modified: 2009-09-28 16:15:49


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