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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Yasuo Nara
Vice Chair Yuzou Oono (Univ. of Tsukuba)
Secretary Yoshitaka Sasago (Hitachi)
Assistant Rihito Kuroda (Tohoku Univ.)

Conference Date Thu, Oct 17, 2013 14:00 - 19:00
Fri, Oct 18, 2013 09:30 - 14:30
Topics Process Science and New Process Technology 
Conference Place FFF, Niche, Tohoku University 
Address FFF Neiche, Aza-Aoba 6-6-10, Aramaki, Aobaku, Sendai, 980-8579
Rihito Kuroda, Tohoku University
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Thu, Oct 17 PM 
14:00 - 19:00
(1) 14:00-14:50 [Invited Talk]
Technological Trend of SiC Power Devices SDM2013-88
Takashi Shinohe (TOSHIBA)
(2) 14:50-15:20 Electrical Properties and Reliability of Ultrathin HfN Gate Insulator Formed on Si(100) and Si(110) SDM2013-89 Nithi Atthi, Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Inst. of Tech.)
  15:20-15:40 Break ( 20 min. )
(3) 15:40-16:10 Effect of silicon surface roughness on 3-D MOS capacitor with ultrathin HfON gate insulator formed by ECR plasma sputtering SDM2013-90 Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Inst. of Tech.)
(4) 16:10-16:40 A device structure design of multi-gate MOSFETs based on carrier mobility characteristics of atomically flattened Si surface SDM2013-91 Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
  16:40-17:00 Break ( 20 min. )
  17:00-19:00 Banquet ( 120 min. )
Fri, Oct 18 AM 
09:30 - 14:30
(5) 09:30-10:00 Si photodiode wiht high sensitivity and high stability to UV-light with 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack SDM2013-92 Yasumasa Koda, Rihito Kuroda, Yukihisa Nakao, Shigetoshi Sugawa (Tohoku Univ.)
(6) 10:00-10:30 A Study on Nitrogen-Doped LaB6 Thin Film Formation and Its Device Applications SDM2013-93 Yasutaka Maeda, Shun-ichiro Ohmi (Tokyo Inst. of Tech.), Tetsuya Goto, Tadahiro Ohmi (Tohoku Univ.)
(7) 10:30-11:00 Introduction of the Bias Operation Hard X-ray Photoelectron Spectroscopy: Evaluation for Insulator/Si interface SDM2013-94 Norihiro Ikeno, Kohki Nagata (Meiji Univ.), Hiroshi Oji, Ichiro Hirosawa (JASRI), Atsushi Ogura (Meiji Univ.)
(8) 11:00-11:30 Classical molecular dynamics simulations of plasma-induced physical damage
-- defect generation mechanisms in fin-type MOSFET --
Koji Eriguchi, Asahiko Matsuda, Yoshinori Nakakubo, Yoshinori Takao, Kouichi Ono (Kyoto Univ.)
  11:30-13:00 Lunch ( 90 min. )
(9) 13:00-13:30 Design method of stacked type non-volatile memory SDM2013-96 Shigeyoshi Watanabe (Shonan Inst. of Tech.)
(10) 13:30-14:00 Effects of plasma-induced charging damage on random telegraph noise (RTN) behaviors in advanced MOSFETs SDM2013-97 Masayuki Kamei, Yoshinori Nakakubo, Yoshinori Takao, Koji Eriguchi, Kouichi Ono (Kyoto Univ.)
(11) 14:00-14:30 Study of Time Constant Analysis in Random Telegraph Noise at the Subthreshold Voltage Region SDM2013-98 Akihiro Yonezawa, Akinobu Teramoto, Toshiki Obara, Rihito Kuroda, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)

Announcement for Speakers
General TalkEach speech will have 25 minutes for presentation and 5 minutes for discussion.
Invited TalkEach speech will have 40 minutes for presentation and 10 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Rihito Kuroda(Tohoku Univ.)
Tel 022-795-4833 Fax 022-795-4835
E-: fffe 

Last modified: 2013-08-19 15:10:12

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