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電子デバイス研究会(ED) [schedule] [select]
専門委員長 橋詰 保 (北大)
副委員長 加地 徹 (豊田中研)
幹事 原 直紀 (富士通研), 津田 邦男 (東芝)
幹事補佐 須原 理彦 (首都大東京), 上田 哲三 (パナソニック)

シリコン材料・デバイス研究会(SDM) [schedule] [select]
専門委員長 遠藤 哲郎 (東北大)
副委員長 奈良 安雄 (富士通マイクロエレクトロニクス)
幹事 小野 行徳 (NTT), 大西 克典 (九工大)
幹事補佐 野村 晋太郎 (筑波大)

日時 2010年 6月30日(水) 09:40 - 17:30
2010年 7月 1日(木) 09:30 - 13:05
2010年 7月 2日(金) 09:30 - 16:50
議題 第18回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2010) 
会場名 東京工業大学 大岡山キャンパス 
住所 〒152-8550 東京都目黒区大岡山2-12-1
交通案内 東京急行 大井町線・目黒線 大岡山駅下車 徒歩1分
http://www.titech.ac.jp/about/campus/index.html
会場世話人
連絡先
大学院理工学研究科 宮本 恭幸
03-5734-2572
他の共催 ◆The Institute of Electronics Engineers of Korea (IEEK),Global COE Program “Photonics Integration-Core Electronics”(東京工業大学) 共催

  09:30-09:40 委員長挨拶 ( 10分 )
6月30日(水) 午前  -Plenary Session 1-
09:40 - 10:30
(1) 09:40-10:20 [基調講演]Challenge for electromechanical logic systems using compound semiconductor heterostructures Hiroshi YamaguchiImran MahboobHajime OkamotoKoji OnomitsuNTT
  10:20-10:30 休憩 ( 10分 )
6月30日(水) 午前  -Session 1A : Emerging Device Technology 1-
10:30 - 14:25
(1) 10:30-10:55 [招待講演]Nano-Electromechanical (NEM) Nonvolatile Memory for Low-Power Electronics Woo Young ChoiSogang Univ.
(2) 10:55-11:20 [招待講演]Dual-gate ZnO thin-film transistors with SiNx as Dielectric Layer Young Su KimMin Ho KangNational Nanofab Center)・Kang Suk JeongChungnam National Univ.)・Jae Sub OhDong Eun YooNational Nanofab Center)・Hi Deok Lee・○Ga-Won LeeChungnam National Univ.
(3) 11:20-11:45 [招待講演]Piezoelectric material based passive RFID tags Hyunchul BaeJaekwon KimJinwook BurmSogang Univ.
  11:45-12:00 休憩 ( 15分 )
(4) 12:00-12:25 [招待講演]Low-temperature Epitaxial Growth of Ferromagnetic Silicide for SiGe Based Spintransistors Masanobu MiyaoKyushu Univ.)・Kohei HamayaKyushu Univ./JST
(5) 12:25-12:50 [招待講演]Toward high-efficiency thin-film solar cells using semiconducting BaSi2 Takashi SuemasuMitsutaka SaitoAtsushi OkadaKatsuaki TouAjimal KhanUniv. of Tsukuba.)・Noritaka UsamiTohoku Univ.
(6) 12:50-13:15 [招待講演]Applications of Smart Cut(TM) Technologies to III-V Based Engineered Substrates Makoto YoshimiSoitec
  13:15-14:25 昼食 ( 70分 )
6月30日(水) 午後  -Session 2A : Memory 1-
14:25 - 15:40
(1) 14:25-14:40 A New Cone-Type 1T DRAM Cell Gil Sung LeeDoo-Hyun KimJang-Gn YunJung Hoon LeeYoon KimJong-Ho LeeHyungcheol ShinByung-Gook ParkSeoul National Univ.
(2) 14:40-14:55 Dependence of Ag film thickness on Formation of Ag Nano-crystals to Fabricate Polymer Nonvolatile Memory Jong-Dae LeeHyun-Min SeungKyoung-Cheol KwonJea-Gun ParkHanyang Univ.
(3) 14:55-15:10 The Impact of H2 Anneal on Resistive Switching in Pt/TiO2/Pt Structure Guobin WeiYuta GotoAkio OhtaKatsunori MakiharaHideki MurakamiSeiichiro HigashiSeiichi MiyazakiHiroshima Univ.
(4) 15:10-15:25 Threshold Voltage Roll-off Mechanisms in SONOS Flash Memory in Retention Mode Including Trapped Charge Redistribution Effect Doo-Hyun KimGil Sung LeeSeongjae ChoJung Hoon LeeJang-Gn YunDong Hua LiYoon KimSe Hwan ParkWon Bo ShimWandong KimByung-Gook ParkSeoul National Univ.
  15:25-15:40 休憩 ( 15分 )
6月30日(水) 午後  -Session 3A : Emerging Device Technology 2-
15:40 - 17:25
(1) 15:40-15:55 Vertical Organic Field Effect Transistors with an Additional Gate Insulation Structure between Active Layer and Gate Electrode Donghyun KimJaewook JeongYongtaek HongSeoul National Univ.
(2) 15:55-16:10 Investigation of n-type pentacene based MOS diodes with ultra-thin metal interface layer Young uk SongShun-ichiro OhmiTokyo Inst. of Tech.
(3) 16:10-16:25 Fundamental oscillations at ~900 GHz with low bias voltages in RTDs having spike-doped structures Safumi SuzukiKiyohito SawadaAtsushi TeranishiMasahiro AsadaTokyo Inst. of Tech.)・Hiroki SugiyamaHaruki YokoyamaNTT
(4) 16:25-16:40 Analysis of low loss and wideband characteristics for monolithic isolators using resonant tunneling diodes Nobuhiko TanakaMitsufumi SaitoMichihiko SuharaTokyo Metro. Univ.
(5) 16:40-16:55 Investigation of Abnormal Drain Current Increase of Tunneling Field-Effect Transistors Min Jin LeeWoo Younhg ChoiSogang Univ.
(6) 16:55-17:10 A design of Novel IGBT with Oblique Trench Gate Juhyun OhDae Hwan ChunKoria Univ.)・Eui Bok LeeKoria Univ./KIST)・○Young Hwan KimChun Keun KimKIST)・Byeong Kwon JuMan Young SungKoria Univ.)・Yong Tae KimKIST
(7) 17:10-17:25 Electrical Characteristics of Atomic Layer Deposited Tungsten Nitride Diffusion Barrier for Cu Interconnects Yong Tae KimKIST)・Eui Bok LeeKoria Univ./KIST)・Young Hwan KimChun Keun KimKIST)・Byeong Kwon JuKoria Univ.
6月30日(水) 午後  -Session 2B : Graphene and ?-?s-
14:25 - 16:30
(1) 14:25-14:50 [招待講演]Synthesis of wafer scale graphene layer for future electronic devices Byung Jin ChoJeong Hun MunKAIST
(2) 14:50-15:15 [招待講演]Graphene channel FET: A New Candidate for High-Speed Devices Tetsuya SuemitsuTohoku Univ.
(3) 15:15-15:30 Deoxyribonucleic Acid Sensitive Graphene Field-Effect Transistors J. S. HwangH. T. KimKorea Univ.)・J. H. LeeD. M. WhangKorea Univ./Sungkyunkwan Univ.)・S. W. HwangKorea Univ.
(4) 15:30-15:45 Fabrication of InP/InGaAs DHBTs with buried SiO2 wires Naoaki TakebeTakashi KobayashiHiroyuki SuzukiYasuyuki MiyamotoKazuhito FuruyaTokyo Inst. of Tech.
(5) 15:45-16:00 Reliability study on the emitter-base junction for high-speed sub-micron InP HBTs Yoshino K. FukaiKenji KurishimaNorihide KashioShoji YamahataNTT Photonics Labs.
(6) 16:00-16:15 Electrochemical formation of InP porous structures for their application to photoelectric conversion devices Hiroyuki OkazakiTaketomo SatoNaoki YoshizawaTamotsu HashizumeHokkaido Univ
  16:15-16:30 休憩 ( 15分 )
6月30日(水) 午後  -Session 3B : High Speed and High Frequency Applications 1-
16:30 - 17:30
(1) 16:30-16:45 50-Gbit/s MUX/DEMUX IC modules using feed-trough type metal-wall package technique Satoshi TsunashimaMichihiro HirataKoichi MurataNTT Corp.
(2) 16:45-17:00 94-GHz Monolithic Down-Converter for FMCW Radar Sensor using Metamorphic HEMTs Yong-Hyun BaekSang-Jin LeeTae-Jong BaekSeok-Gyu ChoiMin HanDong-Sik KoJin-Koo RheeDongguk Univ.
(3) 17:00-17:15 A Sub-Harmonic RF Transmitter Architecture with Simultaneous Power Combination and LO Leakage Cancellation Bongsub SongSogang Univ.)・Dohyung KimSamsung Electronics)・Jinwook BurmSogang Univ.
(4) 17:15-17:30 RF Interconnect Technology for On-Chip and Off-Chip Communication Jongsun KimHongik Univ.)・B. ByunM.Frank ChangUniv. of California
7月1日(木) 午前  -Plenary Session 2-
09:30 - 10:20
(1) 09:30-10:10 [基調講演]Future perspective for the mainstream CMOS technology and their contribution to green technologies Hiroshi IwaiTokyo Inst. of Tech.
  10:10-10:20 休憩 ( 10分 )
7月1日(木) 午前  -Session 4A : Channel Engineering-
10:20 - 11:50
(1) 10:20-10:45 [招待講演]High Transport Si/SiGe Heterostructures for CMOS Transistors with Orientation and Strain Enhanced Mobility Jungwoo OhJ. HuangI. OkS. H. LeeP. D. KirschR. JammyHi-Deok LeeSEMATECH
(2) 10:45-11:10 [招待講演]III-V/Ge CMOS technologies and heterogeneous integrations on Si platform Shinichi TakagiMitsuru TakenakaUniv. of Tokyo.
(3) 11:10-11:35 [招待講演]Stress and Surface Orientation Engineering in Scaled CMOSFETs Considering High-Field Carrier Transport Masumi SaitohYukio NakabayashiToshiba)・Ken UchidaTokyo Inst. of Tech.)・Toshinori NumataToshiba
  11:35-11:50 休憩 ( 15分 )
7月1日(木) 午前  -Session 5A : Emerging Device Technology 3-
11:50 - 13:05
(4) 11:50-12:15 [招待講演]Si single-dopant devices and their characterization Michiharu TabeDaniel MoraruEarfan HamidMiftahul AnwarArief UdhiartoRyusuke NakamuraSakito MikiTakeshi MizunoShizuoka Univ.
(5) 12:15-12:40 [招待講演]Investigation on fabrication of nanoscale patterns using laser interference lithography Jinnil ChoiJung HoKi-Young DongEun-Mi ParkByeong-Kwon JuKorea Univ.
(6) 12:40-13:05 [招待講演]Bottom-up synthesis of metal-free elementary semiconductor nanowires Dongmok WhangSungkyunkwan Univ.)・Sung Woo HwangKoria Univ.
7月2日(金) 午前  -Session 6A : TFTs and Sensors-
09:30 - 11:15
(1) 09:30-09:45 Fabrication of Oxide Thin Film Transistor based on SOG dielectric and solution ZnO Jung Ho ParkJinnil ChoiSeongpil ChangKi-Young DongEun-Mi ParkByeong-Kwon JuUniv. of Korea
(2) 09:45-10:00 Device Simulation of Amorphous Indium-Gallium-Zinc-Oxide Thin Film transistors with various interfacial Dielectric layers Hyo-seong SeongJi-hoon SonWoo-sung KimHong-seung KimKorea Maritime Univ.)・Woo-seok CheongETRI)・Nak-won JangKorea Maritime Univ.
(3) 10:00-10:15 Acivation behaviour for doped Si films after laser or furnace annealing Takashi Noguchi・○Toshiharu SuzukiUniv. of Ryukyus
(4) 10:15-10:30 Strain effects in resistor stress sensor fabricated on (001) silicon and their influences on the determination of piezoresistive coefficients Chun-Hyung ChoHo-Young ChaHongik Univ.
(5) 10:30-10:45 Fabrication of gas sensor using pd doped SnO2 nanotubes Ki-Young DongIn-Sung HwangDae-Jin HamJinnil ChoiJung-Ho ParkJong-Heun LeeByeong-Kwon JuKorea Univ.
(6) 10:45-11:00 Analysis of Transfer Gate in CMOS Image Sensor Seonghyung ParkHyuk-Min KwonJung-Deuk BokIn-Shik HanWoonil ChoiHi-Deok LeeChungnam National Univ
  11:00-11:15 休憩 ( 15分 )
7月2日(金) 午前  -Session 7A : Gate Oxides-
11:15 - 14:15
(1) 11:15-11:30 Interaction of bis-diethylaminosilane with hydroxylized Si (001) surface for SiO2 thin-film growth using density functional theory Seung-Bin BaekDae-Hee KimKorea Univ. of Tech. and Edu.)・Yong-Chan JeongASM Genitech)・Yeong-Cheol KimKorea Univ. of Tech. and Edu.
(2) 11:30-11:45 Electrical and structural properties of metal oxide semiconductor (MOS) devices with Pt/Ta2O5 gate stacks Hoon-Ki LeeJagadeesh ChandraKyu-Hwan ShimChonbuk National Univ.)・Hyung-Joong YunJouhahn LeeKBSI)・Chel-Jong ChoiChonbuk National Univ.
(3) 11:45-12:00 Modulation of PtSi work function by alloying with low work function metal Jun GaoJumpei IshikawaShun-ichiro OhmiTokyo Inst. of Tech.
(4) 12:00-12:15 The Analysis of Temperature Dependency of the Mobility In High-k/Metal Gate MOSFET and the Performance on its CMOS Inverter Takeshi SasakiTakuya ImamotoTetsuo EndohTohoku Univ.
(5) 12:15-12:30 High Integrity Gate Insulator Films on Atomically Flat Silicon Surface Xiang LiRihito KurodaTomoyuki SuwaAkinobu TeramotoShigetoshi SugawaTadahiro OhmiTohoku Univ.
(6) 12:30-12:45 Characterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Detect State Densities Akio OhtaDaisuke KanmeHideki MurakamiSeiichiro HigashiSeiichi MiyazakiHiroshima Univ.
(7) 12:45-13:00 Evaluation of 1/f Noise Characteristics in High-k/Metal Gate and SiON/Poly-Si Gate MOSFET Takuya ImamotoTakeshi SasakiTetsuo EndohTohoku Univ.
  13:00-14:15 昼食 ( 75分 )
7月2日(金) 午後  -Session 8A : Memory 2-
14:15 - 16:50
(1) 14:15-14:40 [招待講演]High-k materials and poly-Si nanowires in nonvolatile memory for 3D flash memory and display panel applications Yung-Chun WuMin-Feng HungJiang-Hung ChenLun-Chun ChenJi-Hong JiangNational Tsing Hua Univ. Taiwan
(2) 14:40-15:05 [招待講演]A Single Element Phase Transition Memory Sang-Hyeon Lee・○Moonkyung KimCornell Univ.)・Byung-ki CheongKIST)・Jooyeon KimUlsan College)・Jo-Won LeeNational Program for Tera-level Nano Devices, Korea)・Sandip TiwariCornell Univ.
(3) 15:05-15:20 Impact of Floating Body type DRAM with the Vertical MOSFET Yuto NorifusaTetsuo EndohTohoku Univ./JST
  15:20-15:35 休憩 ( 15分 )
(4) 15:35-15:50 Independent Gate Twin-bit SONOS Flash Memory with Split-gate Effect Yoon KimJang-Gn YunJung Hoon LeeGil Sung LeeSe Hwan ParkJong-Ho LeeHyungcheol ShinByung-Gook ParkSeoul National Univ.
(5) 15:50-16:05 Theoretical Study of the Hydrogen Effect on the Program/Erase Cycle of MONOS-Type Memories Akira Otake・○Keita YamaguchiKenji ShiraishiUniv. of Tsukuba.
(6) 16:05-16:20 The optimum physical targets of the 3-dimensional vertical FG NAND flash memory cell arrays with the extended sidewall control gate (ESCG) structure Moon-Sik SeoTohoku Univ.)・Tetsuo EndohTohoku Univ./JST
(7) 16:20-16:35 New Method for Evaluating the Scaling Trend of Nano-Electro-Mechanical (NEM) Nonvolatile Memory Cells Seung Hyeun RohWoo Young ChoiSogang Univ.
  16:35-16:40 休憩 ( 5分 )
  16:40-16:50 委員長挨拶 ( 10分 )
7月2日(金) 午前  -Session 6B : Wide Bandgap Materials and Devices, Power Devices-
09:30 - 11:35
(1) 09:30-09:55 [招待講演]Development of Low on-resistance SiC Trench MOSFET and other SiC power devices Yuki NakanoRyota NakamuraKatsuhisa NagaoTakashi NakamuraHidemi TakasuROHM
(2) 09:55-10:10 Effects of Field Plate and Buried Gate Structures on Silicon Carbide Metal-Semiconductor Field-Effect Transistors Jaegil LeeChun-Hyung ChoHo-Young ChaHongik Univ.
(3) 10:10-10:35 [招待講演]InAlN/GaN HEMT Structures on 4-in Silicon Grown by MOCVD Makoto MiyoshiShigeaki SumiyaMikiya IchimuraTomohiko SugiyamaSota MaeharaMitsuhiro TanakaNGK)・Takashi EgawaNagoya Inst. of Tech.
(4) 10:35-10:50 A comparative study on AlGaN/GaN based HEMT and MIS-HEMT with Al2O3 as gate dielectric Joseph FreedsmanArata WatanabeLawrence SelvarajTakashi EgawaNagoya Inst. of Tech.
(5) 10:50-11:05 Characterization of deep electron levels of AlGaN grown by MOVPE Kimihito OoyamaHokkaido Univ./SMM)・Katsuya SugawaraHokkaido Univ.)・Hiroyuki TaketomiHideto MiyakeKazumasa HiramatsuMie Univ.)・Tamotsu HashizumeHokkaido Univ./JST
(6) 11:05-11:20 Characteristics of GaN p-n diode with damage layer induced by ICP plasma process Tsutomu UesugiTetsu KachiToyota Central R&D Labs.)・Tamotsu HashizumeHokkaido Univ.
  11:20-11:35 休憩 ( 15分 )
7月2日(金) 午前  -Session 7B : Si IC and Circuit Technology-
11:35 - 14:15
(1) 11:35-11:50 The Impact of Current Controlled-MOS Current Mode Logic /Magnetic Tunnel Junction Hybrid Circuit for Stable and High-speed Operation Tetsuo EndohMasashi KamiyanagiMasakazu MuraguchiTakuya ImamotoTakeshi SasakiTohoku Univ.
(2) 11:50-12:05 Verification of Stable Circuit Operation of 180nm Current Controlled MOS Current Mode Logic under Threshold Voltage Fluctuation Masashi KamiyanagiTakuya ImamotoTakeshi SasakiHyoungjun NaTetsuo EndohTohoku Univ.
(3) 12:05-12:20 A Non-snapback NMOS ESD Clamp Circuit using Gate-Coupled Scheme with Isolated Well in a Bipolar-CMOS-DMOS Process Jae-Young ParkDae-Woo KimYoung-San SonJong-Chan HaJong-Kyu SongChang-Soo JangWon-Young JungDongbu HiTek
(4) 12:20-12:35 A Precision Floating-Gate Mismatch Measurement Technique for Analog Applications Won-Young JungJong Min KimJin-Soo KimTaek-Soo KimDongbu HiTek
(5) 12:35-12:50 A Physical-Based Modeling for Accurate Wide-Width LDMOS Won-Young JungJong-Sub LeeEun-Jin KimKi-Jung ParkSan-Hun KwakJin-Soo KimTaek-Soo KimDongbu HiTek
(6) 12:50-13:05 Over 1GHz High-Speed Current Pulse Generation Circuit for Novel Nonvolatile Memory Cells Tetsuo EndohYasuhiko SuzukiTakuya ImamotoHyoungjun NaTohoku Univ.
  13:05-14:15 昼食 ( 70分 )
7月2日(金) 午後  -Session 8B : High Speed and High Frequency Applications 2-
14:15 - 15:30
(7) 14:15-14:30 A V-band Common-Source Low Noise Amplifier in 0.13 μm RFCMOS Technology Sung-Jin KimDong-Hyun KimJae-Sung RiehKorea Univ.
(8) 14:30-14:45 A 0.18 um CMOS process 10-PAM transceiver for 10 Gigabit Ethernet Nayeon ChoJ K JeongJ J LeeJ BurmSogang Univ.
(9) 14:45-15:00 A Switched-Capacitor Integrator Using Dynamic Source-Follower Amplifiers Ryoto YaguchiFumiyuki AdachiTakao WahoSophia Univ.
(10) 15:00-15:15 A Basic Study on RF Characteristics of Short Wavelength Comb-type Transmission Line on MMIC Jang-Hyeon JeongYoung-Bae ParkBo-Ra JungJeong-Gab JuEui-Hoon JangChi-Hong MinSeong-Il HongSuk-Youb KangHong Seung KimYoung YunKorea Maritime Univ.
  15:15-15:30 休憩 ( 15分 )
7月2日(金) 午後  -Session 9B : Nano-Scale devices and Physics-
15:30 - 16:40
(1) 15:30-15:45 High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance Yukihisa NakaoRihito KurodaHiroaki TanakaAkinobu TeramotoShigetoshi SugawaTadahiro OhmiTohoku Univ.
(2) 15:45-16:00 Study on Impurity Distribution Dependence of Electron-Dynamics in Vertical MOSFET Masakazu MuraguchiTetsuo EndohTohoku Univ./JST
(3) 16:00-16:15 Characteristic of Dual-Gate Single Electron Transistor (DG-SET) with extended channel using shallow doping and sidewall patterning for suppressing MOS current Joung-eob LeeKwon-Chil KangJung Han LeeKim Kyung WanByung-Gook ParkSeoul National Univ.
(4) 16:15-16:30 Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor Masakazu MuraguchiTohoku Univ.)・Yoko SakuraiYukihiro TakadaShintaro NomuraKenji ShiraishiUniv. of Tsukuba.)・Mitsuhisa IkedaKatsunori MakiharaSeiichi MiyazakiHiroshima Univ.)・Yasuteru ShigetaUniv. of Hyogo)・Tetsuo EndohTohoku Univ.
  16:30-16:40 休憩 ( 10分 )

講演時間
一般講演発表 12 分 + 質疑応答 3 分
招待講演発表 20 分 + 質疑応答 5 分
基調講演発表 35 分 + 質疑応答 5 分

問合先と今後の予定
ED 電子デバイス研究会(ED)   [今後の予定はこちら]
問合先 原 直紀 (富士通研究所)
TEL : 046-250-8242、FAX : 046-250-8168
E- : o
津田 邦男(東芝)
TEL : 044-549-2142、FAX : 044-520-1501
E- : oba
須原 理彦(首都大)
TEL : 042-677-2765 Fax : 042-677-2756
E- : t
上田 哲三(パナソニック)
TEL : 075-956-8273 Fax : 075-956-9110
E- : zopac 
SDM シリコン材料・デバイス研究会(SDM)   [今後の予定はこちら]
問合先 小野 行徳(NTT)
Phone 046-240-2641 Fax 046-240-4317
E-: oaecl 


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