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Technical Committee on Electron Device (ED) [schedule] [select]
Chair Takao Waho
Vice Chair Masaaki Kuzuhara
Secretary Tsuyoshi Tanaka, Manabu Arai
Assistant Shin-ichiro Takatani

Technical Committee on Component Parts and Materials (CPM) [schedule] [select]
Chair Kiyoshi Ishii
Vice Chair Kiichi Kamimura
Secretary Yoshitaka Kitamoto, Toru Matsuura
Assistant Hidehiko Shimizu, Seiji Toyoda

Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Fumio Horiguchi
Vice Chair Tanemasa Asano
Secretary Morifumi Ohno, Mariko Takayanagi
Assistant Yuichi Matsui

Conference Date Thu, May 18, 2006 13:00 - 16:55
Fri, May 19, 2006 09:00 - 15:50
Topics  
Conference Place Venture Business Laboratory, Toyohashi University of Technology 
Address 1-1, Hibarigaoka, Tenpaku-cho, Toyohashi-shi, Aichi-ken, Japan 441-8680
Transportation Guide Toyotetsu Bus, Toyohashi Station - GIKADAI-MAE ( The University ), No.5 bus stop, 30 min.
http://www.vbl.tut.ac.jp/
Contact
Person
Prof. Akihiro Wakahara
0532-44-6742

Thu, May 18  
13:00 - 16:55
(1) 13:00-13:25 Improvement of crystal properties of SrS:Cu films for EL elements by using a rapid thermal annealing Masaaki Isai, Kosuke Sasaki, Daisuke Nakagawa (Shizuoka Univ.)
(2) 13:25-13:50 Preparation and evaluation of Mn oxide films for Li secodary batteries Yuji Chonan, Masaaki Isai, Yasushi Tojyo (Shizuoka Univ.)
(3) 13:50-14:15 Influence of Annealing Conditions on the Sensing Properties of Oxygen Gas Sensor with β-Ga2O3 Films Deposited by CSD Method for High Temperatures Marilena Bartic (Shizuoka Univ.), Cristian-Ioan Baban (Al. I. Cuza Univ.), Masaaki Isai, Masami Ogita (Shizuoka Univ.)
(4) 14:15-14:40 Fabrication of epitaxial γ-Al2O3 thin films by an oxide reduction method and its device applications Takayuki Okada, Mikinori Ito (Toyohashi Univ. of Tech.), Kazuaki Sawada, Makoto Ishida (Toyohashi Univ. of Tech./JST)
  14:40-14:50 Break ( 10 min. )
(5) 14:50-15:15 RPE-MOCVD-growth of Zn1-xCdxO film for visible emission region Toshiya Ohashi, Junji Ishihara, Atsushi Nakamura, Toru Aoki, Jiro Temmyo (Shizuoka Univ.)
(6) 15:15-15:40 Control of ZnO nanodots on sapphire substrate. Kota Okamatsu, Satoshi Nakagawa, Atsushi Nakamura, Toru Aoki, Jiro Temmyo (Shizuoka Univ.)
(7) 15:40-16:05 Contorol of carbon-nano structure by thermal decomposition on SiC Yoshitaka Hashimoto, Guogiang Zhang, Atsushi Nakamura, Akira Tanaka, Jiro Temmyo (Sizuoka Univ.)
(8) 16:05-16:30 Synthesis of GaN based blue phosphors using metal EDTA complex Shinya Koide, Kazuya Nakamura, Yuhuai Liu, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ), Atsushi Nakamura, Nobuyishi Nanbu (chubu chelest)
(9) 16:30-16:55 Fabrication and Characterization of Photonic Crystal structure on microfabricated Si Substrate Takeharu Ishii, Fumiaki Matsuoka, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.)
Fri, May 19  
09:00 - 15:50
(1) 09:00-09:25 Microstructure of group-III nitride semiconductors grown on m-plane SiC Tetsuya Nagai, Takeshi Kawashima, Kiyotaka Nakano, Masataka Imura, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.)
(2) 09:25-09:50 Heteroepitaxy of GaN for Si-GaN OEIC Tatsuya Kawano, Susumu Hatakenaka, Mikinori Itoh, Akihiro Wakahara, Hiroshi Okada, Makoto Ishida (Toyohashi Univ. Tech.)
(3) 09:50-10:15 Electrical Properties of GaPN Akihiro Wakahara, Yuzo Furukawa, Atsushi Sato, Eri Shimada, Daisuke Minohara, Hiroo Yonezu (toyohashi Univ. of Tech.)
(4) 10:15-10:40 InGaPN/GaPN Quantum Well Structures for Si/III-V-N Optoelectronic Integrated Circuits Kazuyuki Umeno, Sung Man Kim, Yuzo Furukawa, Hiroo Yonezu, Akihiro Wakahara (Toyohashi Univ. Tech.)
  10:40-10:50 Break ( 10 min. )
(5) 10:50-11:15 Fabrication of MOSFETs and LEDs for Si/III-V-N Optoelectronic Integrated Circuits Naruto Ohta, Yuji Morisaki, Soo-Young Moon, Seigi Ishiji, Yuzo Furukawa, Hiroo Yonezu, Akihiro Wakahara (Toyohashi Univ. Tech.)
(6) 11:15-11:40 Improvement of crystal quality for high effeciency of spin-polarized electron source based on GaAs/GaAsP super-lattice structure Toru Ujihara, Chen Bo, Kenichi Yasui, Ryosuke Sakai, Masahiro Yamamoto, Tsutomu Nakanisihi, Yoshikazu Takeda (Nagoya Univ.)
(7) 11:40-12:05 Fabrication of patterned GaInAs/GaAs hetero-structure using amorphous arsenic mask Yosuke Noritake, Takumi Yamada, Masao Tabuchi, Yoshikazu Takeda (Nagoya Univ.)
  12:05-13:10 Lunch Break ( 65 min. )
(8) 13:10-13:35 Leakage current control of AlGaN Schottky interfaces by surface control process using thin Al layer Junji Kotani, Masamitsu Kaneko, Tamotsu Hashizume (Hokkaido Univ.)
(9) 13:35-14:00 Electrical characteristics of n-type diamond Schottky diodes and metal/diamond interfaces Mariko Suzuki (Toshiba), Satoshi Koizumi (NIMS), Masayuki Katagiri (Univ of Tsukuba), Tomio Ono, Naoshi Sakuma, Hiroaki Yoshida, Tadashi Sakai (Toshiba)
(10) 14:00-14:25 Estimation of trap parameters from a slow component of excess carrier decay curves Masaya Ichimura (Nagoya Inst. Technol.)
  14:25-14:35 Break ( 10 min. )
(11) 14:35-15:00 Light irradiation effect on single-hole-tunneling current of an SOI-FET Zainal A. Burhanudin, Ratno Nuryadi, Michiharu Tabe (Shizuoka Univ.)
(12) 15:00-15:25 Tunneling current oscillations in Si/SiO2/Si structures Daniel Moraru, Daisuke Nagata (Shizuoka Univ.), Seiji Horiguchi (Akita Univ.), Ratno Nuryadi, Hiroya Ikeda, Michiharu Tabe (Shizuoka Univ.)
(13) 15:25-15:50 Fabrication of Microchips for Blood Examination Integrated with Solution Pre-treatment Mechanism and Synchronous Photodetection Unit. Toshihiko Noda, Nozomu Hirokubo (Toyohashi Univ. of Tech.), Hidekuni Takao (Toyohashi Univ. of Tech./JST), Narihiro Oku, Kouichi Matsumoto (HORIBA, Ltd.), Kazuaki Sawada, Makoto Ishida (Toyohashi Univ. of Tech./JST)

Announcement for Speakers
General Talk (25分)Each speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Device (ED)   [Latest Schedule]
Contact Address Tsuyoshi Tanaka(Matsushita)
TEL: 075-956-9083, FAX: 075-956-9110
E-: erlci
Manabu Arai(New JRC)
TEL: 049-278-1477、FAX: 049-278-1419
E-: injr
Shinichiro Takatani(Hitachi)
TEL: 049-278-1477、FAX: 049-278-1419
E-: injr 
CPM Technical Committee on Component Parts and Materials (CPM)   [Latest Schedule]
Contact Address Yoshitaka Kitamoto (Tokyo Institute of Technology)
TEL 045-924-5424, FAX 045-924-5433
E-: iem

Tohru Matsuura (ATR)
TEL 0774-95-1173, FAX 0774-95-1178
E-: hmatr 
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Mariko Takayanagi (Toshiba)
TEL 045-770-3638 ,FAX 045-770-3571
E-: giba 


Last modified: 2006-03-27 20:21:08


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