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Technical Committee on Electron Devices (ED) [schedule] [select]
Chair Kunio Tsuda (Toshiba)
Vice Chair Michihiko Suhara (TMU)
Secretary Manabu Arai (New JRC), Masataka Higashiwaki (NICT)
Assistant Toshiyuki Oishi (Saga Univ.), Tatsuya Iwata (TUT)

Technical Committee on Component Parts and Materials (CPM) [schedule] [select]
Chair Fumihiko Hirose (Yamagata Univ.)
Vice Chair Mayumi Takeyama (Kitami Inst. of Tech.)
Secretary Nobuyuki Iwata (Nihon Univ.), Yuichi Nakamura (Toyohashi Univ. of Tech.)
Assistant Yuichi Akage (NTT)

Technical Committee on Lasers and Quantum Electronics (LQE) [schedule] [select]
Chair Tsuyoshi Yamamoto (Fujitsu Labs.)
Vice Chair Kiichi Hamamoto (Kyusyu Univ.)
Secretary Takashi Katagiri (Tohoku Univ.), Hideki Yagi (SEI)
Assistant Yasumasa Kawakita (Furukawa Electric Industries), Naoki Fujiwara (NTT)

{INFOMESITEM}
Conference Date Thu, Nov 30, 2017 13:35 - 17:05
Fri, Dec 1, 2017 09:40 - 17:30
Topics Nitride Semiconductor Devices, Materials, Related Technologies 
Conference Place  
Transportation Guide http://www.nitech.ac.jp/eng/access/index.html
Contact
Person
Prof. Takashi Egawa
+81-52-732-2111
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Thu, Nov 30 PM 
13:30 - 15:15
  13:30-13:35 ( 5 min. )
(1) 13:35-14:00 A novel method to measure absolute internal quantum efficiency in InGaN quantum wells by simultaneous photo-acoustic and photoluminescence spectroscopy ED2017-49 CPM2017-92 LQE2017-62 Naoto Shimizu, Yuchi Takahashi, Genki Kobayashi, Takashi Nakano, Shigeta Sakai, Atsusi A. Yamaguchi (Kanazawa Inst. of Tech.), Yuya Kanitani, Shigetaka Tomiya (Sony)
(2) 14:00-14:25 Model Analysis of I-V and Photoluminescence Characteristics under Photo-Excitation in InGaN LEDs ED2017-50 CPM2017-93 LQE2017-63 Yusuke Ota, Shigeta Sakai, Atsushi A. Yamaguchi (Kanazawa Inst. of Tech.)
(3) 14:25-14:50 Detailed analysis of S-shaped temperature dependence of photoluminescence peak energy in InGaN quantum wells ED2017-51 CPM2017-94 LQE2017-64 Yuma Ikeda, Shigeta Sakai, Itsuki Oshima, Atsushi A. Yamaguchi (Kanazawa Inst. of Tehc.), Yuya Kanitani, Shigetaka Tomiya (Sony)
(4) 14:50-15:15 Optical properties of AlGaN quantum wires formed on AlN with macrostep surface ED2017-52 CPM2017-95 LQE2017-65 Minehiro Hayakawa, Yuki Hayashi, Yuki Nagase, Shuhei Ichikawa, Kyosuke Kumamoto, Mami Shibaoka, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.)
  15:15-15:25 Break ( 10 min. )
Thu, Nov 30 PM 
15:25 - 17:05
(5) 15:25-15:50 Study on oxygen reduction in MOVPE growth of GaN on -c-plane GaN substrate ED2017-53 CPM2017-96 LQE2017-66 Tsukasa Kono, Maki Kushimoto, Kentaro Nagamatsu, Shugo Nitta, Yoshio Honda, Hiroshi Amano (Nagoya Univ.)
(6) 15:50-16:15 Low-damage etching of nitride semiconductors utilizing photo-electrochemical reactions for electron devices ED2017-54 CPM2017-97 LQE2017-67 Keisuke Uemura, Satoru Matsumoto, Masachika Toguchi, Keisuke Ito, Taketomo Sato (Hokkaido Univ.)
(7) 16:15-16:40 Mapping of wavy surface morphology of n-GaN using scanning internal photoemission microscopy ED2017-55 CPM2017-98 LQE2017-68 Kenji Shiojima, Takanori Hashizume (Univ. of Fukui), Masafumi Horikiri, Takeshi Tanaka (SCIOCS), Tomoyoshi Mishima (Hosei Univ.)
(8) 16:40-17:05 Electrical characteristics of n-GaN Schottky contacts on cleaved surfaces of free-standing substrates
-- Metal workfunction dependence of Schottky barrier height --
ED2017-56 CPM2017-99 LQE2017-69
Kenji Shiojima, Hiroyoshi Imadate (Univ. of Fukui), Tomoyoshi Mishima (Hosei Univ.)
Fri, Dec 1 AM 
09:40 - 11:20
(9) 09:40-10:05 A comparative study of InGaN/GaN MQW solar cells grown on sapphire and AlN/sapphire template by metalorganic chemical vapor deposition ED2017-57 CPM2017-100 LQE2017-70 Takuma Mori, Miki Ohta, Hiroki Harada, Shinya Kato, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.)
(10) 10:05-10:30 Realization of red resonant cavity LEDs with an Eu-doped GaN as active layer ED2017-58 CPM2017-101 LQE2017-71 Jun Tatebayashi, Tomohiro Inaba, Keishi Shiomi, Yasuhumi Fujiwara (Osaka Univ.)
(11) 10:30-10:55 Two-step graded p-AlGaN structure for deep UV-LEDs ED2017-59 CPM2017-102 LQE2017-72 Hisanori Kojima, Toshiki Yasuda, Daiki Kanbayashi, Kazuyoshi Iida, Norikatsu Koide, Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.)
(12) 10:55-11:20 Achievement of AlGaN deep-UV LED using photonic crystal(PhC)
-- Achievement of high-EQE(10%) AlGaN deep-UV LED using highly-reflective PhC on p-contact layer --
ED2017-60 CPM2017-103 LQE2017-73
Yukio Kashima (Marubun), Noritoshi Maeda (RIKEN), Eriko Matsuura (Marubun), Masafumi Jo (RIKEN), Takeshi Iwai, Toshiro Morita (TOK), Mitsunori Kokubo, Takaharu Tashiro (TOSHIBA MACHINE), Ryuichiro Kamimura, Yamato Osada (ULVAC), Yuichi Kurashima, Hideki Takagi (AIST), Hideki Hirayama (RIKEN)
  11:20-12:30 Break ( 70 min. )
Fri, Dec 1 PM 
12:30 - 14:10
(13) 12:30-12:55 Characterization of Chemical Structure and Electrical Properties of Remote O2 Plasma Enhanced CVD SiO2/GaN(0001) structures ED2017-61 CPM2017-104 LQE2017-74 NguyenXuan Truyen (Nagoya Univ.), Noriyuki Taoka (AIST GaN OIL), Akio Ohta (Nagoya Univ.), Hisashi Yamada, Tokio Takahashi (AIST GaN OIL), Mitsuhisa Ikeda, Katsunori Makihara (Nagoya Univ.), Mitsuaki Shimizu (AIST GaN OIL), Seiichi Miyazaki (Nagoya Univ.)
(14) 12:55-13:20 Improvement of PBTI reliability in GaN-MOSFETs ED2017-62 CPM2017-105 LQE2017-75 Yosuke Kajiwara, Toshiya Yonehara, Daimotsu Kato, Kenjiro Uesugi, Aya Shindome, Masahiko Kuraguchi, Akira Mukai, Hiroshi Ono, Miki Yumoto, Akira Yoshioka, Shinya Nunoue (Toshiba)
(15) 13:20-13:45 Study on degradation of NO2 adsorbed H-terminated diamond MOS FETs by constant voltage stress ED2017-63 CPM2017-106 LQE2017-76 Yuma Ishimatsu, Kosuke Funaki, Satoshi Masuya, Kyosuke Miyazaki, Takayoshi Oshima, Makoto Kasu, Toshiyuki Oishi (Saga Univ.)
(16) 13:45-14:10 Estimation of effects of layer thickness and annealing on chemical states of ALD-Al2O3 layers on AlGaN by using XPS and ESR ED2017-64 CPM2017-107 LQE2017-77 Toshiharu Kubo, Makoto Miyoshi, Takashi Egawa (Nagoya Inst. of Tech.)
  14:10-14:20 Break ( 10 min. )
Fri, Dec 1 PM 
14:20 - 16:00
(17) 14:20-14:45 Two-step crystal growth of GaN nanowire by MOCVD ED2017-65 CPM2017-108 LQE2017-78 Kohei Sasai, Myunghee KIM, Atusi Suzuki, Hiroki Sibuya, Yuki Kurisaki, Kyohei Nokimura, Minoru Takebayasi, Satosi Kamiyama, Tetuya Takeuchi, Motoaki Iwaya, Isamu Akasaki (Meijo Univ.)
(18) 14:45-15:10 Homoepitaxial growth on sputtered AlN templates by MOVPE ED2017-66 CPM2017-109 LQE2017-79 Ryo Yoshizawa, Yusuke Hayashi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.)
(19) 15:10-15:35 Fabrication of Polarity-inverted AlN by Face-to-Face Annealing and Application for QPM-SHG ED2017-67 CPM2017-110 LQE2017-80 Yusuke Hayashi, Hideto Miyake, Kazumasa Hiramatsu, Toru Akiyama, Tomonori Ito (Mie Univ.), Ryuji Katayama (Osaka Univ.)
(20) 15:35-16:00 Thermal annealing of semipolar AlN on m-plane sapphire ED2017-68 CPM2017-111 LQE2017-81 Masafumi Jo, Satoshi Minami, Hideki Hirayama (RIKEN)
  16:00-16:10 Break ( 10 min. )
Fri, Dec 1 PM 
16:10 - 17:30
(21) 16:10-16:35 Dye sensitized solar cells using zeolite coated TiO2 photonanodes ED2017-69 CPM2017-112 LQE2017-82 Takahiro Imai, Yoshiharu Mori, Masanori Miura, Kensaku Kanomata, Bashir Ahmmad, Shigeru Kubota, Fumihiko Hirose (Yamagata Univ.)
(22) 16:35-17:00 Application of the FDTD Aglgorithm with Envelope Method to Optical Analysis of Organic Photovoltaics ED2017-70 CPM2017-113 LQE2017-83 Shigeru Kubota, Kensaku Kanomata, Bashir Ahmmad (Yamagata Univ.), Jun Mizuno (Waseda Univ.), Fumihiko Hirose (Yamagata Univ.)
(23) 17:00-17:25 Enhanced efficiency of quantum dot sensitized solar cell by localized surface plasmon resonance of silver nanoparticles ED2017-71 CPM2017-114 LQE2017-84 Yuya Kibata, Masanori Miura, Kensaku Kanomata, Shigeru Kubota, Fumihiko Hirose, Bashir Ahmmad Arima (Yamagata Univ.)
  17:25-17:30 ( 5 min. )

Announcement for Speakers
General TalkEach speech will have 20 minutes for presentation and 5 minutes for discussion.

Contact Address and Latest Schedule Information
ED Technical Committee on Electron Devices (ED)   [Latest Schedule]
Contact Address Manabu Arai(New Japan Radio Co.,Ltd)
TEL:+81-049-278-1441 FAX:+81-49-278-1269
E-injr
Masataka Higashiwaki (NICT)
TEL : +81-42-327-6092 Fax : +81-42-327-5527
E- : m 
CPM Technical Committee on Component Parts and Materials (CPM)   [Latest Schedule]
Contact Address  
LQE Technical Committee on Lasers and Quantum Electronics (LQE)   [Latest Schedule]
Contact Address Takashi Katagiri(Tohoku Univ)
TEL +81-22-795-7107, FAX +81-22-795-7106
E-:giecei

Hideki Yagi (SEI)
TEL +81-45-853-7318
E-:gi-dei 
Announcement Homepage of LQE is http://www.ieice.org/~lqe/jpn/


Last modified: 2018-11-22 09:56:25


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