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Technical Committee on Silicon Device and Materials (SDM) [schedule] [select]
Chair Tetsuro Endo (Tohoku Univ.)
Vice Chair Yasuo Nara (Fujitsu Microelectronics)
Secretary Yukinori Ono (NTT), Katsunori Onishi (Kyushu Inst. of Tech.)
Assistant Shintaro Nomura (Univ. of Tsukuba)

Conference Date Thu, Oct 21, 2010 14:00 - 18:10
Fri, Oct 22, 2010 09:30 - 16:50
Topics Semiconductor process science and new technology 
Conference Place Niche, Tohoku University 
Transportation Guide http://www.fff.niche.tohoku.ac.jp/index_e.html
Contact
Person
Tetsuya Goto
+81-22-795-3977
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)

Thu, Oct 21 PM 
14:00 - 18:10
(1) 14:00-15:00 [Invited Talk]
Channel strain evaluation for advanced LSI SDM2010-152
Atsushi Ogura, Daisuke Kosemura, Munehisa Takei, Motohiro Tomita (Meiji Univ.)
(2) 15:00-15:30 Stress Tensor Measurements using Raman Spectroscopy with High-NA Oil-Immersion Lens SDM2010-153 Daisuke Kosemura, Atsushi Ogura (Meiji Univ.)
(3) 15:30-16:00 Mechanism of Work Function Modulation of PtSi Alloying with Yb SDM2010-154 Jumpei Ishikawa, Jun Gao, Shun-ichiro Ohmi (Tokyo Tech)
  16:00-16:10 Break ( 10 min. )
(4) 16:10-16:40 A Study on Precise Control of PtSi Work Function by Alloying with Hf SDM2010-155 Jun Gao, Jumpei Ishikawa, Shun-ichiro Ohmi (Tokyo Tech)
(5) 16:40-17:10 Effect of ultra-thin Yb layer on n-type characteristics of pentacene based MOS diodes SDM2010-156 Young-uk Song, Hiroshi Ishiwara, Shun-ichiro Ohmi (Tokyo Inst. of Tech.)
(6) 17:10-17:40 Low Resistance Source/Drain Contacts with Low Schottky Barrier for High Performance Transistors SDM2010-157 Hiroaki Tanaka, Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
(7) 17:40-18:10 Low-temperature crystallization of thin-film amorphous silicon SDM2010-158 Yoko Iwakaji, Jun Hirota, Moto Yabuki, Hirokazu Ishida, Wakana Kaneko, Ichiro Mizushima, Hiroshi Akahori (Toshiba)
  18:10-18:30 Break ( 20 min. )
  18:30-20:30 Banquet ( 120 min. )
Fri, Oct 22 AM 
09:30 - 12:10
(8) 09:30-10:00 Study on Electron Transfer in Light-Emitting Polymer/Cathode Interface by Luminescence Computational Chemistry SDM2010-159 Itaru Yamashita, Hiroaki Onuma, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)
(9) 10:00-10:30 Emission Property Prediction of Eu2+-doped Phosphors from Crystal Structures: Material Informatics Study SDM2010-160 Hiroaki Onuma, Daiki Yoshihara, Itaru Yamashita, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)
(10) 10:30-11:00 Theoretical Study on Carrier Transfer in Si/SiC Quantum Dot Solar Cells SDM2010-161 Sho Hirose, Itaru Yamashita, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Hideyuki Tsuboi, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)
  11:00-11:10 Break ( 10 min. )
(11) 11:10-11:40 Evaluation of Internal Strain and Electron Mobility in poly-Si TFTs Formed by CW Laser Lateral Crystallization SDM2010-162 Shuntaro Fujii, Shin-Ichiro Kuroki, Koji Kotani (Tohoku Univ.)
(12) 11:40-12:10 Fabrication of Highly Crystalline-Oriented Poly-Si Thin Films by using Double -Line-Beam CLC for High Performance LPTS-TFT SDM2010-163 Shin-Ichiro Kuroki, Yuya Kawasaki, Shuntaro Fujii, Koji Kotani (Tohoku Univ.), Takashi Ito (Tokyo Inst. of Tech.)
  12:10-13:10 Lunch ( 60 min. )
Fri, Oct 22 PM 
13:10 - 16:50
(13) 13:10-13:40 Effect of gate insulator on the electrical properties of pentacene based organic field-effect transistors SDM2010-164 Min Liao, Hiroshi Ishiwara, Shun-ichiro Ohmi (Tokyo Inst. of Tech.)
(14) 13:40-14:10 Integration of Novel Non-porous Low-k Dielectric Fluorocarbon into Advanced Cu Interconnects SDM2010-165 Xun Gu, Takenao Nemoto, Yugo Tomita, Akinobu Teramoto, Shin-Ichiro Kuroki, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.)
(15) 14:10-14:40 Characterization of In-situ Formed HfN/HfSiON Gate Stacks by ECR Sputtering SDM2010-166 Takahiro Sano, Shun-ichiro Ohmi (Tokyo Inst. of Tech.)
  14:40-14:50 Break ( 10 min. )
(16) 14:50-15:20 Crystallographic orientation dependence of compositional transition and valence band offset at SiO2/Si interface formed using oxygen radicals SDM2010-167 Tomoyuki Suwa, Yuki Kumagai, Akinobu Teramoto, Tadahiro Ohmi, Takeo Hattori (Tohoku Univ.), Toyohiko Kinoshita, Takayuki Muro (JASRI)
(17) 15:20-15:50 Development of Automated System of Ultra-Accelerated Quantum Chemical Molecular Dynamics Method and Its Application to Silicon/Insulator Interface Formation Technologies SDM2010-168 Hideyuki Tsuboi, Kenji Inaba, Mariko Ise, Yukie Hayashi, Yuka Suzuki, Hiromi Sato, Yukiko Obara, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)
(18) 15:50-16:20 Dry, Wet and Radical Oxidation Simulation of Silicon Surface Using Automated System of Ultra-Accelerated Quantum Chemical Molecular Dynamics Method SDM2010-169 Hideyuki Tsuboi, Mariko Ise, Yukie Hayashi, Yuka Suzuki, Hiromi Sato, Yukiko Obara, Kenji Inaba, Ryo Nagumo, Ryuji Miura, Ai Suzuki, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Akira Miyamoto (Tohoku Univ.)
(19) 16:20-16:50 Strain evaluation in Si at atomically flat SiO2/Si interface SDM2010-170 Maki Hattori (Meiji Univ.), Daisuke Kosemura (Meiji Univ./JSPS), Munehisa Takei, Kohki Nagata, Hiroaki Akamatsu, Motohiro Tomita, Yuuki Mizukami, Yuuki Hashiguchi, Takuya Yamaguchi, Atsushi Ogura (Meiji Univ.), Tomoyuki Suwa, Akinobu Teramoto, Takeo Hattori, Tadahiro Ohmi (NICHe), Tomoyuki Koganezawa (JASRI)

Announcement for Speakers
General TalkEach speech will have 25 minutes for presentation and 5 minutes for discussion.
Invited TalkEach speech will have 50 minutes for presentation and 10 minutes for discussion.

Contact Address and Latest Schedule Information
SDM Technical Committee on Silicon Device and Materials (SDM)   [Latest Schedule]
Contact Address Hisahiro Ansai(Sony)
Tel 046-201-3297 Fax046-202-6572
E--mail: Hisahiro.Ansai@jp.sony.com 


Last modified: 2010-08-19 12:40:06


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